公开(公告)号：US07822677B1

公开(公告)日：2010-10-26

申请号：US11899775

申请日：2007-09-07

申请人： Dennis Rodrigues ,  Sumner White ,  Tanya Kanchanagom ,  Robert Allison ,  Rajesh Mani

发明人： Dennis Rodrigues ,  Sumner White ,  Tanya Kanchanagom ,  Robert Allison ,  Rajesh Mani

IPC分类号： G06Q40/00

CPC分类号： G06Q40/00 ,  G06Q40/04

摘要： Price-based inquiry lists for financial interests are submitted, negotiated and traded between investors and dealers over a network or networks. An investor interface for display is provided to an investor. A dealer interface for display is provided to a plurality of dealers. The investor can create a price-based inquiry list via the investor interface containing a plurality of inquiries for a corresponding plurality of different financial interests and can transmit the price-based inquiry list to one or more selected dealers, where an established relationship exists between the investor and the dealers. One or more of the selected dealers may provide responses to the received price-based inquiry list, where the response contains one or more offers/bids on the plurality of inquiries contained in the inquiry list via the dealer interface. The respective offers/bids are displayed in the price-based inquiry list on the investor interface. The investor may receive the best response for each bond on the price-based inquiry list and, if desired, execute one or more trades using the investor interface.

摘要翻译： 基于价格的财务利益查询列表通过网络或网络在投资者和经销商之间提交，谈判和交易。 向投资者提供投资者接口。 向多个经销商提供用于显示的经销商接口。 投资者可以通过投资者界面创建基于价格的查询列表，其中包含对相应的多个不同财务利益的多个查询，并且可以将基于价格的查询列表发送给一个或多个所选经销商，其中存在 投资者和经销商。 一个或多个选定的经销商可以向所接收的基于价格的查询列表提供响应，其中响应包含经由经销商界面包含在查询列表中的多个查询的一个或多个提议/投标。 相应的报价/投标将显示在投资者界面的基于价格的查询列表中。 投资者可以对基于价格的查询列表中的每个债券收到最佳回应，如果需要，可以使用投资者界面执行一个或多个交易。

公开(公告)号：US20120233057A1

公开(公告)日：2012-09-13

申请号：US13476608

申请日：2012-05-21

申请人： Brijesh Agarwal ,  Rachel Moseley ,  Richard J. Schiffman ,  Rajesh Mani

发明人： Brijesh Agarwal ,  Rachel Moseley ,  Richard J. Schiffman ,  Rajesh Mani

IPC分类号： G06Q40/04

CPC分类号： G06Q40/04

摘要： Methods and apparatuses, including computer program products, are described for negotiating the price for a traded security. A security, and a bid or offer terms, are transmitted from at least one dealer to an investor. An indication of interest in purchasing the security is received from the investor and transmitted to at least one dealer. A first bid in response to the indication of interest is received from more than one dealer. The first bid is stored for at least one period of time. In the event that at least two of the stored bids are tied for best: a tie-breaking request is transmitted to each of the tied-for-best dealers, the stored bid for one or more of the tied-for-best dealers is updated with a second bid, the stored bids are transmitted to the investor, and an acceptance, a rejection, or a counter-offer is received from the investor.

摘要翻译： 描述了包括计算机程序产品在内的方法和设备，用于谈判交易安全的价格。 证券，投标或报价条款从至少一个经销商转交给投资者。 从投资者那里收到有关采购安全信息的指示，并传送给至少一位经销商。 收到来自多个经销商的第一个出价以回应利益的指示。 第一个出价存储至少一段时间。 如果至少有两个存储的出价被捆绑在一起：将一个打破破裂的请求传送给每个最佳经销商，对一个或多个被绑定的最佳经销商的存储竞价是 以第二次投标更新，存储的投标将转交给投资者，并从投资者那里收到接受，拒绝或反收购。

公开(公告)号：US08207044B2

公开(公告)日：2012-06-26

申请号：US13110613

申请日：2011-05-18

申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

IPC分类号： H01L21/331

CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

公开(公告)号：US07947561B2

公开(公告)日：2011-05-24

申请号：US12401895

申请日：2009-03-11

申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

IPC分类号： H01L21/00

CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

公开(公告)号：US08682777B1

公开(公告)日：2014-03-25

申请号：US12698758

申请日：2010-02-02

申请人： Daniel Epstein ,  Rajesh Mani ,  Yuriy Metelev

发明人： Daniel Epstein ,  Rajesh Mani ,  Yuriy Metelev

IPC分类号： G06Q40/00

CPC分类号： G06Q40/04

摘要： Methods and systems for computer-based trading enhanced with market and historical data displayed on live screen. Users of the trading platform are able to view on their live screen of executed and pending orders, information about the market depth of a transmitted order, the current view of all transmitted orders and executed trades, historical view of all transmitted orders and executed trades, bond instrument details, execution prices for the various bond instruments, yield for the bond instruments, and spread for the bond instruments.

摘要翻译： 基于计算机的交易的方法和系统增强了现场屏幕上显示的市场和历史数据。 交易平台的用户可以在实时屏幕上查看已执行和未完成的订单，关于发送订单的市场深度的信息，所有已发送的订单和已执行交易的当前视图，所有已发送的订单和已执行交易的历史视图， 债券工具细节，各种债券工具的执行价格，债券工具的收益率和债券工具的差价。

公开(公告)号：US20080274626A1

公开(公告)日：2008-11-06

申请号：US11744778

申请日：2007-05-04

申请人： Frederique Glowacki ,  Laurent Vandroux ,  Rajesh Mani

发明人： Frederique Glowacki ,  Laurent Vandroux ,  Rajesh Mani

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02054 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/318

摘要： In certain embodiments methods for depositing materials on substrates, and more particularly, methods for depositing dielectric layers, such as silicon oxides or silicon oxynitrides, on germanium substrates are provided. The methods involve depositing a barrier layer on the germanium substrate to prevent oxidation of the germanium substrate when forming a dielectric layer on the germanium substrate. In certain embodiments, a silicon layer is deposited on the germanium substrate to form a barrier layer. In certain embodiments, nitridation of the germanium substrate forms a GexNy layer which functions as a barrier layer. In certain embodiments, a silicon nitride layer is deposited on the germanium substrate to form a barrier layer.

摘要翻译： 在某些实施例中，提供了用于在衬底上沉积材料的方法，更具体地，提供了用于在锗衬底上沉积电介质层（例如氧化硅或氮氧化硅）的方法。 所述方法包括在锗衬底上沉积阻挡层以防止在锗衬底上形成介电层时氧化锗衬底。 在某些实施例中，硅层沉积在锗衬底上以形成阻挡层。 在某些实施方案中，锗衬底的氮化形成用作阻挡层的Ge x N N y O层。 在某些实施例中，氮化硅层沉积在锗衬底上以形成阻挡层。

公开(公告)号：US08527396B2

公开(公告)日：2013-09-03

申请号：US13476608

申请日：2012-05-21

申请人： Brijesh Agarwal ,  Rachel Moseley ,  Richard J. Schiffman ,  Rajesh Mani

发明人： Brijesh Agarwal ,  Rachel Moseley ,  Richard J. Schiffman ,  Rajesh Mani

IPC分类号： G06Q40/00

CPC分类号： G06Q40/04

摘要： Methods and apparatuses, including computer program products, are described for negotiating the price for a traded security. A security, and a bid or offer terms, are transmitted from at least one dealer to an investor. An indication of interest in purchasing the security is received from the investor and transmitted to at least one dealer. A first bid in response to the indication of interest is received from more than one dealer. The first bid is stored for at least one period of time. In the event that at least two of the stored bids are tied for best: a tie-breaking request is transmitted to each of the tied-for-best dealers, the stored bid for one or more of the tied-for-best dealers is updated with a second bid, the stored bids are transmitted to the investor, and an acceptance, a rejection, or a counter-offer is received from the investor.

摘要翻译： 描述了包括计算机程序产品在内的方法和设备，用于谈判交易安全的价格。 证券，投标或报价条款从至少一个经销商转交给投资者。 从投资者那里收到有关采购安全信息的指示，并传送给至少一位经销商。 收到来自多个经销商的第一个出价以回应利益的指示。 第一个出价存储至少一段时间。 如果至少有两个存储的出价被捆绑在一起：将一个打破破裂的请求传送给每个最佳经销商，对一个或多个被绑定的最佳经销商的存储竞价是 以第二次投标更新，存储的投标将转交给投资者，并从投资者那里收到接受，拒绝或反收购。

公开(公告)号：US08392314B1

公开(公告)日：2013-03-05

申请号：US12698540

申请日：2010-02-02

申请人： Daniel Epstein ,  Rajesh Mani ,  Yuriy Metelev

发明人： Daniel Epstein ,  Rajesh Mani ,  Yuriy Metelev

IPC分类号： G06Q40/00

CPC分类号： G06Q40/04

摘要： Methods and systems for computer-based incremental trading are provided. Owners of the top price/time priority orders are able to trade between each other multiple numbers of times prior to the expiration of a workup period, at which time the workup orders of all the users participating in the workup are matched. The workup period is private between the owners of the top price/time priority orders and the orders are allowed to be modified multiple times. When the workup period ends, orders are matched according to the original price/time priority.

摘要翻译： 提供了基于计算机的增量交易的方法和系统。 顶级价格/时间优先级订单的所有者能够在处理时间到期之前在彼此之间进行多次交换，此时所有参与该处理的用户的处理顺序相匹配。 最高价格/时间优先顺序的所有者之间的处理期是私人的，并且允许订单被多次修改。 当处理期结束时，根据原始价格/时间优先级对订单进行匹配。

公开(公告)号：US20090311877A1

公开(公告)日：2009-12-17

申请号：US12143626

申请日：2008-06-20

申请人： CHRISTOPHER S. OLSEN ,  Yoshitaka Yokota ,  Rajesh Mani ,  Johanes Swenberg

发明人： CHRISTOPHER S. OLSEN ,  Yoshitaka Yokota ,  Rajesh Mani ,  Johanes Swenberg

IPC分类号： H01L21/316

CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28247 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/517

摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.

摘要翻译： 本发明的实施例提供了在半导体衬底上形成氧化物层的方法。 在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。 氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。 在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。