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    FORMING CMOS WITH CLOSE PROXIMITY STRESSORS
    1.
    发明申请
    FORMING CMOS WITH CLOSE PROXIMITY STRESSORS 有权
    形成具有紧密接近压力的CMOS

    公开(公告)号：US20130295740A1

    公开(公告)日：2013-11-07

    申请号：US13465159

    申请日：2012-05-07

    申请人： Desmond J. Donegan, JR. ,  Abhishek Dube ,  Steven Jones ,  JOPHY S. KOSHY ,  Viorel Ontalus

    发明人： Desmond J. Donegan, JR. ,  Abhishek Dube ,  Steven Jones ,  JOPHY S. KOSHY ,  Viorel Ontalus

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636

    摘要： A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.

    摘要翻译： 提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。 该方法包括在衬底的第一区域中形成第一晶体管，在衬底的第一区域的顶部上具有栅极叠层，以及邻近栅堆叠的侧壁的一组间隔物，第一区域包括源极和漏极 第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管，在所述衬底的所述第二区域的顶部上具有栅极叠层，以及邻近所述栅极叠层的侧壁的一组间隔区，所述第二区域包括所述栅极叠层的源极和漏极区域 第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。

    Forming CMOS with close proximity stressors
    2.
    发明授权
    Forming CMOS with close proximity stressors 有权
    形成具有接近应力的CMOS

    公开(公告)号：US09041119B2

    公开(公告)日：2015-05-26

    申请号：US13465159

    申请日：2012-05-07

    申请人： Desmond J. Donegan, Jr. ,  Abhishek Dube ,  Steven Jones ,  Jophy S. Koshy ,  Viorel Ontalus

    发明人： Desmond J. Donegan, Jr. ,  Abhishek Dube ,  Steven Jones ,  Jophy S. Koshy ,  Viorel Ontalus

    IPC分类号： H01L29/02 ,  H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636

    摘要： A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.

    摘要翻译： 提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。 该方法包括在衬底的第一区域中形成第一晶体管，在衬底的第一区域的顶部上具有栅极叠层，以及邻近栅堆叠的侧壁的一组间隔物，第一区域包括源极和漏极 第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管，在所述衬底的所述第二区域的顶部上具有栅极叠层，以及邻近所述栅极叠层的侧壁的一组间隔区，所述第二区域包括所述栅极叠层的源极和漏极区域 第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。

    Blind rivet, removal system and related method
    8.
    发明申请
    Blind rivet, removal system and related method 审中-公开
    盲铆钉，拆卸系统及相关方法

    公开(公告)号：US20070154277A1

    公开(公告)日：2007-07-05

    申请号：US11444274

    申请日：2006-05-31

    申请人： Daniel Smith ,  Steven Jones ,  David Evans

    发明人： Daniel Smith ,  Steven Jones ,  David Evans

    IPC分类号： F16B13/06

    CPC分类号： F16B19/1054 ,  B21J15/50

    摘要： The present invention relates to a blind rivet and blind rivet removal system and related method. Once set the blind rivet is not normally removed. However, increasingly removal is required due to the need to recycle automobiles. In order to remove blind rivets it has been necessary to remove the rivet flange by a variety of methods. Generally these methods were ineffective due to the resistance afforded by the mandrel and the risk of damage to the application or workpiece. Removing this unwanted swarf and debris often proved difficult. The invention provides a rivet with a stepped flange and a rivet removal tool with clips adapted to fit between the flange and surface of a workpiece so that upon relative displacement of the clips a rivet is extracted in a substantially axial direction as a single item. The invention also includes a tool and related method of blind rivet removal.

    摘要翻译： 本发明涉及一种盲铆钉和盲铆钉去除系统及其相关方法。 一旦设置，盲铆钉通常不会被去除。 然而，由于需要回收汽车，需要越来越多的清除。 为了去除盲铆钉，必须通过各种方法去除铆钉法兰。 通常这些方法由于心轴提供的阻力以及损坏应用或工件的风险而无效。 去除这种不需要的切屑和碎屑通常被证明是困难的。 本发明提供了一种具有阶梯式凸缘的铆钉和具有适于装配在工件的凸缘和表面之间的夹子的铆钉移除工具，使得当夹具的相对移位时，将铆钉作为单个项目沿基本轴向方向抽出。 本发明还包括一种盲铆钉去除工具和相关方法。