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    Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
    3.
    发明授权
    Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer 有权
    包括压电层和反压电层的体声波谐振器

    公开(公告)号：US08796904B2

    公开(公告)日：2014-08-05

    申请号：US13286051

    申请日：2011-10-31

    申请人： Dariusz Burak ,  Kevin J. Grannen ,  John D. Larson, III ,  Alexandre Shirakawa

    发明人： Dariusz Burak ,  Kevin J. Grannen ,  John D. Larson, III ,  Alexandre Shirakawa

    IPC分类号： H01L41/08 ,  H03H9/58

    CPC分类号： H03H9/587 ,  H03H9/02015 ,  H03H9/132 ,  H03H9/173 ,  H03H9/584

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.

    摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

    Bulk acoustic resonator comprising non-piezoelectric layer
    4.
    发明授权
    Bulk acoustic resonator comprising non-piezoelectric layer 有权
    包含非压电层的体声波谐振器

    公开(公告)号：US08330325B1

    公开(公告)日：2012-12-11

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    发明人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    IPC分类号： H03H9/15 ,  H03H9/125

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    Radiofrequency transmission system
    5.
    发明授权
    Radiofrequency transmission system 有权
    射频传输系统

    公开(公告)号：US08284858B2

    公开(公告)日：2012-10-09

    申请号：US12832291

    申请日：2010-07-08

    申请人： Patrick Wurm ,  Claire Auer (Wurm), legal representative ,  Alexandre Shirakawa

    发明人： Patrick Wurm ,  Alexandre Shirakawa

    IPC分类号： H04L27/00

    CPC分类号： H04B1/0053

    摘要： The invention relates to a radiofrequency transmission system comprising: means of producing at least one digital signal quantized on N bits; for each of said at least one digital signal, digital processing means including: Sigma-delta filters capable of producing, on the basis of a digital input signal quantized on N bits, a digital output signal quantized on M bits, where M is less than N; downstream from sigma-delta filters, means of repetition over-sampling; and downstream from over-sampling means, convolution means; digital-to-analogue conversion means capable of converting a digital output signal into an analogue signal; and analogue filtering means capable of filtering said analogue signal so as to select a narrow frequency band which includes the second frequency.

    摘要翻译： 本发明涉及一种射频传输系统，包括：产生以N比特量化的至少一个数字信号的装置; 对于所述至少一个数字信号中的每一个，数字处理装置包括：Σ-Δ滤波器，其能够基于在N比特量化的数字输入信号产生以M比特量化的数字输出信号，其中M小于 N; Σ-Δ滤波器的下游，重复过采样的手段; 并且在过采样装置的下游是卷积装置; 数字到模拟转换装置，能够将数字输出信号转换为模拟信号; 以及能够对所述模拟信号进行滤波以便选择包括第二频率的窄频带的模拟滤波装置。

    Coupled resonator filter comprising a bridge and frame elements
    6.
    发明授权
    Coupled resonator filter comprising a bridge and frame elements 有权
    耦合谐振滤波器，包括桥接元件和框架元件

    公开(公告)号：US09148117B2

    公开(公告)日：2015-09-29

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor
    9.
    发明授权
    Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor 有权
    具有电极层和压电层厚度的双膜体声共振器提供改善的品质因数

    公开(公告)号：US08872604B2

    公开(公告)日：2014-10-28

    申请号：US13101376

    申请日：2011-05-05

    申请人： Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

    发明人： Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/56 ,  H03H9/58 ,  H03H9/205

    CPC分类号： H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

    摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

    摘要翻译： 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

    Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators
    10.
    发明授权
    Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators 有权
    具有由两个耦合谐振器之间的谐振频率差控制的阻抗变换比的声耦合谐振滤波器

    公开(公告)号：US08508315B2

    公开(公告)日：2013-08-13

    申请号：US12710626

    申请日：2010-02-23

    申请人： Tiberiu Jamneala ,  Alexandre Shirakawa ,  Bernhard Koelle

    发明人： Tiberiu Jamneala ,  Alexandre Shirakawa ,  Bernhard Koelle

    IPC分类号： H03H9/54

    CPC分类号： H03H9/584 ,  H03H9/50 ,  H03H9/587 ,  Y10T29/42

    摘要： A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other.

    摘要翻译： 信号处理装置包括第一声谐振器，设置在第一声谐振器上的第二声谐振器和第一和第二声谐振器之间的耦合层。 第一声​​谐振器具有第一电阻抗和第一谐振频率，并且包括第一组电极和设置在第一组电极之间的具有第一厚度的第一压电层。 第二声谐振器具有第二电阻抗和第二谐振频率，并且包括第二组电极和具有第二厚度的第二压电层，其中第二压电层设置在第二组电极之间。 器件通带频率处的第一个电阻抗与器件的通带频率处的第二个电阻抗基本上不同。 第一和第二谐振频率基本上彼此不同。