公开(公告)号：US06664167B2

公开(公告)日：2003-12-16

申请号：US10085940

申请日：2002-02-28

申请人： Dietmar Temmler ,  Herbert Benzinger ,  Wolfram Karcher ,  Catharina Pusch ,  Martin Schrems ,  Jürgen Faul

发明人： Dietmar Temmler ,  Herbert Benzinger ,  Wolfram Karcher ,  Catharina Pusch ,  Martin Schrems ,  Jürgen Faul

IPC分类号： H01L2120

CPC分类号： H01L27/10861 ,  H01L27/10832

摘要： A memory having a memory cell formed in a substrate and including a trench capacitor and a transistor and a method for producing the memory includes connecting the trench capacitor to the transistor with a self-aligned connection. The transistor at least partly covers the trench capacitor. The trench capacitor is filled with a conductive trench filling and an insulating covering layer is situated on the conductive trench filling. An epitaxial layer is situated above the insulating covering layer. The transistor is formed in the epitaxial layer. The self-aligned connection is formed in a contact trench and includes an insulation collar in which a conductive material is introduced. A conductive cap is formed on the conductive material.

公开(公告)号：US06326262B1

公开(公告)日：2001-12-04

申请号：US09651492

申请日：2000-08-30

申请人： Dietmar Temmler ,  Herbert Benzinger ,  Wolfram Karcher ,  Catharina Pusch ,  Martin Schrems ,  Jürgen Faul

发明人： Dietmar Temmler ,  Herbert Benzinger ,  Wolfram Karcher ,  Catharina Pusch ,  Martin Schrems ,  Jürgen Faul

IPC分类号： H01L218242

CPC分类号： H01L27/10867 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L27/10832

摘要： A method of fabricating an epitaxial layer includes providing a substrate having a substrate surface with an at least partly uncovered monocrytalline region, and at least one electrically insulating region adjoining the monocrystalline region and being at least partly surrounded by the monocrystalline region. An epitaxial layer is grown on the monocrystalline region. The electrically insulating region is at least partly overgrown laterally with the epitaxial layer, thereby forming an epitaxial closing joint above the electrically insulating region due to the overgrowth. The epitaxial layer is at least partly removed above the electrically insulating region, thereby the epitaxial closing joint is at least partly removed.

摘要翻译： 一种制造外延层的方法包括提供具有至少部分未覆盖的白杨碱区域的衬底表面的衬底以及与单晶区域相邻并且至少部分被单晶区域包围的至少一个电绝缘区域。 在单晶区域上生长外延层。 电绝缘区域至少部分地与外延层横向成长，从而由于过度生长而在电绝缘区域上形成外延闭合接头。 在电绝缘区域上至少部分去除外延层，从而至少部分去除外延闭合接头。

公开(公告)号：US07049647B2

公开(公告)日：2006-05-23

申请号：US10390871

申请日：2003-03-17

申请人： Wolfram Karcher ,  Dietmar Temmler ,  Martin Schrems

发明人： Wolfram Karcher ,  Dietmar Temmler ,  Martin Schrems

IPC分类号： H01L21/8242

CPC分类号： H01L27/10861 ,  H01L27/10832

摘要： A semiconductor memory cell is formed in a substrate and includes a trench capacitor and a selection transistor. The trench capacitor includes a capacitor dielectric and a conductive trench filling. Disposed on the conductive trench filling is a diffusion barrier on which an epitaxial layer is formed. The selection transistor is disposed as a planar transistor above the trench capacitor. A drain doping region of the selection transistor is disposed in the epitaxial layer.

公开(公告)号：US06699747B2

公开(公告)日：2004-03-02

申请号：US10298394

申请日：2002-11-18

申请人： Alexander Ruff ,  Wilhelm Kegel ,  Wolfram Karcher ,  Martin Schrems

发明人： Alexander Ruff ,  Wilhelm Kegel ,  Wolfram Karcher ,  Martin Schrems

IPC分类号： H01L218242

CPC分类号： H01L27/10861 ,  H01L21/31683 ,  H01L28/56 ,  H01L29/66181

摘要： In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.

摘要翻译： 在形成沟槽电容器的方法中，将第一层氧化硅沉积在存储沟槽中，并且通过化学气相沉积工艺在第一层上沉积硅层。 一层可氧化金属沉积在硅层上。 硅层和可氧化金属层随后被氧化以形成氧化硅层和金属氧化物层。

公开(公告)号：US06781180B1

公开(公告)日：2004-08-24

申请号：US09677545

申请日：2000-10-02

申请人： Schrems Martin ,  Dirk Drescher ,  Helmut Wurzer ,  Wolfram Karcher

发明人： Schrems Martin ,  Dirk Drescher ,  Helmut Wurzer ,  Wolfram Karcher

IPC分类号： H01L27108

CPC分类号： H01L27/10861 ,  H01L27/10864 ,  H01L27/10867 ,  H01L27/1087

摘要： A trench capacitor for use in a semiconductor memory cell is formed in a substrate and includes a trench having an upper region and a lower region. An insulation collar is formed in the upper region of the trench. The lower region of the trench extends through a buried well. A dielectric layer, which is formed from tungsten oxide, serves as a capacitor dielectric. A conductive trench filling, which is filled into the trench, is formed from silicon or a tungsten-containing material such as tungsten, tungsten silicide or tungsten nitride.

摘要翻译： 用于半导体存储单元的沟槽电容器形成在衬底中，并且包括具有上部区域和下部区域的沟槽。 在沟槽的上部区域中形成绝缘套环。 沟槽的下部区域延伸穿过埋置的井。 由氧化钨形成的电介质层用作电容器电介质。 填充到沟槽中的导电沟槽填充物由硅或含钨材料如钨，硅化钨或氮化钨形成。

公开(公告)号：US06194314B1

公开(公告)日：2001-02-27

申请号：US09019612

申请日：1998-02-06

申请人： Wolfram Karcher ,  Lutz Labs

发明人： Wolfram Karcher ,  Lutz Labs

IPC分类号： C23C1608

CPC分类号： H01L21/76838 ,  C23C16/0218 ,  C23C16/42 ,  C23C16/4405

摘要： In chemical gaseous phase deposition (CVD=Chemical Vapor Deposition), there is frequently the problem of there still being an aggressive gas in the reaction chamber from the preceding layer production process. The aggressive gas can be a remainder of a process gas used for layer production or it can be a remainder gas produced by the reaction of the process gasses. The aggressive gas can cause undesirable reactions on the surface of the semiconductor product, which damage the semiconductor product. A process for layer production on a surface includes supplying at least one protective gas to the surface before and/or during the heating of the surface to the reaction temperature. Through the use of the protective gas, on one hand the aggressive gas still remaining in the reaction chamber is thinned and on the other hand a part of the protective gas adsorbs onto the cold surface so that on the surface, preferably reactions of the aggressive gas with the protective gas occur and the surface layers themselves remain essentially undamaged.

摘要翻译： 在化学气相沉积（CVD =化学气相沉积）中，常常存在来自前一层生产过程的反应室中仍然存在侵蚀性气体的问题。 侵蚀性气体可以是用于层生产的工艺气体的剩余部分，或者其可以是通过工艺气体的反应产生的剩余气体。 侵蚀性气体可能在半导体产品的表面上引起不期望的反应，这损害半导体产品。 用于在表面上层生产的方法包括在将表面加热到反应温度之前和/或期间向表面供应至少一种保护气体。 通过使用保护气体，一方面仍然残留在反应室中的侵蚀性气体变薄，另一方面，保护气体的一部分吸附到冷表面上，使得在表面上优选侵蚀性气体 发生保护气体并且表面层本身保持基本上没有损坏。