利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.033 秒)

    Structure and programming of laser fuse
    1.
    发明授权
    Structure and programming of laser fuse 有权
    激光熔丝的结构和编程

    公开(公告)号：US07064409B2

    公开(公告)日：2006-06-20

    申请号：US10605885

    申请日：2003-11-04

    申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

    发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

    摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝连接在第一电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

    Structure and programming of laser fuse
    2.
    发明授权
    Structure and programming of laser fuse 有权
    激光熔丝的结构和编程

    公开(公告)号：US07384824B2

    公开(公告)日：2008-06-10

    申请号：US11362680

    申请日：2006-02-27

    申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

    发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

    IPC分类号： H01L21/82 ,  H01L29/00

    CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

    摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。 熔丝连接在电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

    Laser fuse structures for high power applications
    6.
    发明授权
    Laser fuse structures for high power applications 失效
    用于大功率应用的激光熔丝结构

    公开(公告)号：US07701035B2

    公开(公告)日：2010-04-20

    申请号：US11164640

    申请日：2005-11-30

    申请人： Stephen E. Greco ,  Erik L. Hedberg ,  Dae-Young Jung ,  Paul S. McLaughlin ,  Christopher D. Muzzy ,  Norman J. Rohrer ,  Jean E. Wynne

    发明人： Stephen E. Greco ,  Erik L. Hedberg ,  Dae-Young Jung ,  Paul S. McLaughlin ,  Christopher D. Muzzy ,  Norman J. Rohrer ,  Jean E. Wynne

    IPC分类号： H01L23/525 ,  H01L21/768

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to a laser fuse structure for high power applications. Specifically, the laser fuse structure of the present invention comprises first and second conductive supporting elements (12a, 12b), at least one conductive fusible link (14), first and second connection elements (20a, 20b), and first and second metal lines (22a, 22b). The conductive supporting elements (12a, 12b), the conductive fusible link (14), and the metal lines (22a, 22b) are located at a first metal level (3), while the connect elements (20a, 20b) are located at a second, different metal level (4) and are connected to the conductive supporting elements (12a, 12b) and the metal lines (22a, 22b) by conductive via stacks (18a, 18b, 23a, 23b) that extend between the first and second metal levels (3, 4).

    摘要翻译： 本发明涉及一种用于大功率应用的激光熔丝结构。 具体地，本发明的激光熔丝结构包括第一和第二导电支撑元件（12a，12b），至少一个导电熔丝（14），第一和第二连接元件（20a，20b）以及第一和第二金属线 （22a，22b）。 导电支撑元件（12a，12b），导电熔丝（14）和金属线（22a，22b）位于第一金属层（3）处，而连接元件（20a，20b）位于 第二不同的金属层（4），并且通过在第一和第二金属层之间延伸的导电通孔叠层（18a，18b，23a，23b）连接到导电支撑元件（12a，12b）和金属线（22a，22b） 第二金属含量（3,4）。

    Heat dissipation from IC interconnects
    7.
    发明授权
    Heat dissipation from IC interconnects 失效
    IC互连散热

    公开(公告)号：US06798066B1

    公开(公告)日：2004-09-28

    申请号：US10249910

    申请日：2003-05-16

    申请人： William T. Motsiff ,  Timothy D. Sullivan ,  Jean E. Wynne ,  Sally J. Yankee

    发明人： William T. Motsiff ,  Timothy D. Sullivan ,  Jean E. Wynne ,  Sally J. Yankee

    IPC分类号： H01L2348

    CPC分类号： H01L23/60 ,  H01L23/36 ,  H01L23/367 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to dissipating heat from an interconnect formed in a low thermal conductivity dielectric in an integrated circuit apparatus. The integrated circuit apparatus includes integrated circuit devices interconnected by conductive interconnection metallurgy and input/output pads subject to electrostatic discharge events. At least one latent heat of transformation absorber is associated with at least one of the input/output pads for preventing the energy generated by an electrostatic discharge event from damaging the conductive interconnection metallurgy.

    摘要翻译： 本发明涉及从形成在集成电路装置中的低导热电介质中的互连件散热。 集成电路装置包括通过导电互连冶金互连的集成电路装置和经受静电放电事件的输入/输出垫。 至少一个变换吸收器的潜热与至少一个输入/输出焊盘相关联，用于防止由静电放电事件产生的能量损坏导电互连冶金。

    Low leakage metal-containing cap process using oxidation
    8.
    发明授权
    Low leakage metal-containing cap process using oxidation 有权
    低泄漏含金属帽工艺使用氧化

    公开(公告)号：US07867897B2

    公开(公告)日：2011-01-11

    申请号：US12573407

    申请日：2009-10-05

    申请人： Jeffrey P. Gambino ,  Jason P. Gill ,  Sean Smith ,  Jean E. Wynne

    发明人： Jeffrey P. Gambino ,  Jason P. Gill ,  Sean Smith ,  Jean E. Wynne

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53238 ,  H01L21/288 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76856 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any other dielectric material thereon. Moreover, metal particles that are located on the surface of the dielectric material between the conductive features are also oxidized at the same time as the surface region of the metal-containing cap. This provides a structure having a reduced leakage current. In accordance with the present invention, the oxidation step is performed after electroless plating of the metal-containing cap and prior to the deposition of a dielectric capping layer or an overlying interlayer or intralevel dielectric material.

    摘要翻译： 提供一种互连结构，其包括位于电介质材料内部的每个导电特征顶部的位于金属的盖的顶盖，其中含金属盖的表面区域在其后沉积任何其它电介质材料之前被氧化。 此外，位于介电材料表面之间的导电特征之间的金属颗粒也与含金属盖的表面区域同时被氧化。 这提供了具有减小的漏电流的结构。 根据本发明，氧化步骤是在含金属盖的无电镀之后并且在沉积介电覆盖层或上覆的中间层或电介质材料之前进行的。

    Method of making a copper interconnect having a barrier liner of multiple metal layers
    9.
    发明授权
    Method of making a copper interconnect having a barrier liner of multiple metal layers 有权
    制造具有多个金属层的阻挡衬里的铜互连的方法

    公开(公告)号：US08841212B2

    公开(公告)日：2014-09-23

    申请号：US13609668

    申请日：2012-09-11

    申请人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    发明人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/532

    CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method patterns at least one opening in a low-K insulator layer of a multi-level integrated circuit structure, such that a copper conductor is exposed at the bottom of the opening. The method then lines the sidewalls and the bottom of the opening with a first Tantalum Nitride layer in a first chamber and forms a Tantalum layer on the first Tantalum Nitride layer in the first chamber. Next, sputter etching on the opening is performed in the first chamber, so as to expose the conductor at the bottom of the opening. A second Tantalum Nitride layer is formed on the conductor, the Tantalum layer, and the first Tantalum Nitride layer, again in the first chamber. After the second Tantalum Nitride layer is formed, the methods herein form a flash layer comprising a Platinum group metal on the second Tantalum Nitride layer in a second, different chamber.

    摘要翻译： 一种方法图形为多级集成电路结构的低K绝缘体层中的至少一个开口，使得铜导体在开口的底部露出。 该方法然后在第一室中用第一钽氮化物层排列开口的侧壁和底部，并在第一室中的第一氮化钽层上形成钽层。 接下来，在第一室中进行对开口的溅射蚀刻，以使开口底部的导体露出。 在第一室中再次在导体，钽层和第一氮化钽层上形成第二钽氮化物层。 在形成第二钽氮化物层之后，本文的方法在第二不同室中在第二氮化钽层上形成包含铂族金属的闪蒸层。

    BARRIER SEQUENCE FOR USE IN COPPER INTERCONNECT METALLIZATION
    10.
    发明申请
    BARRIER SEQUENCE FOR USE IN COPPER INTERCONNECT METALLIZATION 有权
    用于铜相互连接金属化的栅栏序列

    公开(公告)号：US20130005137A1

    公开(公告)日：2013-01-03

    申请号：US13609668

    申请日：2012-09-11

    申请人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    发明人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    IPC分类号： H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method patterns at least one opening in a low-K insulator layer of a multi-level integrated circuit structure, such that a copper conductor is exposed at the bottom of the opening. The method then lines the sidewalls and the bottom of the opening with a first Tantalum Nitride layer in a first chamber and forms a Tantalum layer on the first Tantalum Nitride layer in the first chamber. Next, sputter etching on the opening is performed in the first chamber, so as to expose the conductor at the bottom of the opening. A second Tantalum Nitride layer is formed on the conductor, the Tantalum layer, and the first Tantalum Nitride layer, again in the first chamber. After the second Tantalum Nitride layer is formed, the methods herein form a flash layer comprising a Platinum group metal on the second Tantalum Nitride layer in a second, different chamber.

    摘要翻译： 一种方法图形为多级集成电路结构的低K绝缘体层中的至少一个开口，使得铜导体在开口的底部露出。 该方法然后在第一室中用第一钽氮化物层排列开口的侧壁和底部，并在第一室中的第一氮化钽层上形成钽层。 接下来，在第一室中进行对开口的溅射蚀刻，以使开口底部的导体露出。 在第一室中再次在导体，钽层和第一氮化钽层上形成第二钽氮化物层。 在形成第二钽氮化物层之后，本文的方法在第二不同室中在第二氮化钽层上形成包含铂族金属的闪蒸层。