公开(公告)号：US07064409B2

公开(公告)日：2006-06-20

申请号：US10605885

申请日：2003-11-04

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L29/00

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝连接在第一电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：US07981732B2

公开(公告)日：2011-07-19

申请号：US12105366

申请日：2008-04-18

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L21/268

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.

摘要翻译： 激光熔丝编程方法。 激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。 激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

公开(公告)号：US20080194064A1

公开(公告)日：2008-08-14

申请号：US12105366

申请日：2008-04-18

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L21/268

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.

摘要翻译： 激光熔丝编程方法。 激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。 激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

公开(公告)号：US07384824B2

公开(公告)日：2008-06-10

申请号：US11362680

申请日：2006-02-27

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L21/82 ,  H01L29/00

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。 熔丝连接在电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：US07768815B2

公开(公告)日：2010-08-03

申请号：US11161941

申请日：2005-08-23

申请人： Fen Chen ,  Richard S. Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher D. Muzzy ,  Timothy D. Sullivan

发明人： Fen Chen ,  Richard S. Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher D. Muzzy ,  Timothy D. Sullivan

IPC分类号： G11C13/00

CPC分类号： G11C13/0009 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/04 ,  G11C13/047 ,  G11C2013/0054 ,  H01L45/1213 ,  H01L45/145

摘要： A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.

摘要翻译： 一种结构及其操作方法。 该方法包括在衬底上提供电阻/反射区域，其中电阻/反射区域包括具有由于材料吸收热而改变材料的反射率的特性的材料; 发送电流通过电阻/反射区域，以使电阻/反射区域的反射率变化从第一反射率值到不同于第一反射率值的第二反射率值; 并且光学地读取电阻/反射区域中的反射率变化。

公开(公告)号：US07166913B2

公开(公告)日：2007-01-23

申请号：US10907873

申请日：2005-04-19

申请人： Anil K. Chinthakindi ,  Lawrence A. Clevenger ,  Tom C. Lee ,  Gerald Matusiewicz ,  Conal E. Murray ,  Chih-Chao Yang

发明人： Anil K. Chinthakindi ,  Lawrence A. Clevenger ,  Tom C. Lee ,  Gerald Matusiewicz ,  Conal E. Murray ,  Chih-Chao Yang

IPC分类号： H01L23/34

CPC分类号： H01L23/5228 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method are disclosed for heat dissipation relative to a heat generating element in a semiconductor device. The structure includes a plurality of heat transmitting lines partially vertically coincidental with the heat generating element, and at least one interconnecting path from each heat transmitting line to a substrate of the semiconductor device. In one embodiment, the heat generating element includes a resistor in a non-first metal level. The invention is compatible with conventional BEOL interconnect schemes, minimizes the amount of heat transfer from the resistor to the surrounding interconnect wiring, thus eliminating the loss of current carrying capability in the wiring.

摘要翻译： 公开了相对于半导体器件中的发热元件的散热的结构和方法。 该结构包括多个与发热元件垂直一致的传热线，以及从每个传热线到半导体器件的基板的至少一个互连路径。 在一个实施例中，发热元件包括非第一金属水平的电阻器。 本发明与传统的BEOL互连方案兼容，使得从电阻器到周围互连布线的传热量最小化，从而消除了布线中的载流能力的损失。

公开(公告)号：US07692439B2

公开(公告)日：2010-04-06

申请号：US12154304

申请日：2008-05-22

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/02 ,  H01L23/58 ,  G01N25/20

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure representative of a conductive interconnect of a microelectronic element is provided, which may include a conductive metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between the upper and lower surfaces, the upper surface defining a horizontally extending plane. The structure may also include a lower via having a top end in conductive communication with the metallic plate and a bottom end vertically displaced from the top end. A lower conductive or semiconductive element can be in contact with the bottom end of the lower via. An upper metallic via can lie in at least substantial vertical alignment with the lower conductive via, the upper metallic via having a bottom end in conductive communication with the metallic plate and a top end vertically displaced from the bottom end. The upper metallic via may have a width at least about ten times than the length of the metallic plate and about ten times smaller than the width of the metallic plate. The structure may further include an upper metallic line element in contact with the top end of the upper metallic via.

摘要翻译： 提供了表示微电子元件的导电互连的结构，其可以包括具有上表面，下表面和在上表面和下表面之间延伸的多个周边边缘的导电金属板，上表面限定水平 延伸平面 该结构还可以包括具有与金属板导电连通的顶端和从顶端垂直移位的底端的下通孔。 下导电或半导体元件可以与下通孔的底端接触。 上金属通孔可以与下导电通孔至少基本垂直对准，上金属通孔具有与金属板导电连通的底端和从底端垂直移位的顶端。 上部金属通孔的宽度可以比金属板的长度至少大约十倍，并且比金属板的宽度小约十倍。 该结构还可以包括与上金属通孔的顶端接触的上金属线元件。

公开(公告)号：US20080231312A1

公开(公告)日：2008-09-25

申请号：US12154304

申请日：2008-05-22

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/26

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure representative of a conductive interconnect of a microelectronic element is provided, which may include a conductive metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between the upper and lower surfaces, the upper surface defining a horizontally extending plane. The structure may also include a lower via having a top end in conductive communication with the metallic plate and a bottom end vertically displaced from the top end. A lower conductive or semiconductive element can be in contact with the bottom end of the lower via. An upper metallic via can lie in at least substantial vertical alignment with the lower conductive via, the upper metallic via having a bottom end in conductive communication with the metallic plate and a top end vertically displaced from the bottom end. The upper metallic via may have a width at least about ten times than the length of the metallic plate and about ten times smaller than the width of the metallic plate. The structure may further include an upper metallic line element in contact with the top end of the upper metallic via.

摘要翻译： 提供了表示微电子元件的导电互连的结构，其可以包括具有上表面，下表面和在上表面和下表面之间延伸的多个周边边缘的导电金属板，上表面限定水平 延伸平面 该结构还可以包括具有与金属板导电连通的顶端和从顶端垂直移位的底端的下通孔。 下导电或半导体元件可以与下通孔的底端接触。 上金属通孔可以与下导电通孔至少基本垂直对准，上金属通孔具有与金属板导电连通的底端和从底端垂直移位的顶端。 上部金属通孔的宽度可以比金属板的长度至少大约十倍，并且比金属板的宽度小约十倍。 该结构还可以包括与上金属通孔的顶端接触的上金属线元件。

公开(公告)号：US07639032B2

公开(公告)日：2009-12-29

申请号：US12004011

申请日：2007-12-19

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/02 ,  H01L23/58 ,  G01N25/20

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).

摘要翻译： 提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。 至少一些导电互连件包括金属板，金属连接线和上金属通孔。 所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。 金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。 上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

公开(公告)号：US07397260B2

公开(公告)日：2008-07-08

申请号：US11163948

申请日：2005-11-04

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/02 ,  H01L23/58 ,  G01N25/20

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).

摘要翻译： 提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。 至少一些导电互连件包括金属板，金属连接线和上金属通孔。 所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。 金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。 上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。