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    Junction formation on wafer substrates using group IV nanoparticles
    6.
    发明授权
    Junction formation on wafer substrates using group IV nanoparticles 有权
    使用IV族纳米粒子在晶片衬底上形成结

    公开(公告)号：US07923368B2

    公开(公告)日：2011-04-12

    申请号：US12109684

    申请日：2008-04-25

    申请人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

    发明人： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2256 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/2257 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.

    摘要翻译： 公开了形成扩散区域的方法。 该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。 该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

    Methods for creating a densified group IV semiconductor nanoparticle thin film
    7.
    发明授权
    Methods for creating a densified group IV semiconductor nanoparticle thin film 失效
    用于形成致密化的IV族半导体纳米颗粒薄膜的方法

    公开(公告)号：US07521340B2

    公开(公告)日：2009-04-21

    申请号：US11950024

    申请日：2007-12-04

    申请人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

    发明人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

    摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.

    摘要翻译： 公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。 该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

    Current limiting device
    8.
    发明授权
    Current limiting device 有权
    限流装置

    公开(公告)号：US06989806B2

    公开(公告)日：2006-01-24

    申请号：US10300157

    申请日：2002-11-20

    申请人： Franky So ,  Homer Antoniadis ,  Ian Millard ,  Vung Vo

    发明人： Franky So ,  Homer Antoniadis ,  Ian Millard ,  Vung Vo

    IPC分类号： G09G3/32

    CPC分类号： G09G3/3216 ,  G09G2330/04 ,  G09G2330/10 ,  H01L27/3225 ,  H01L51/5212 ,  H01L51/5228 ,  H01L2251/568

    摘要： An embodiment of the present invention pertains to an electronic device such as a passive matrix display, an alpha-numeric display, a detector array, or a solar cell array. The electronic device includes multiple organic optoelectronic devices and one or more of these organic optoelectronic devices are protected from shorts. Each of the one or more organic optoelectronic devices that is protected from a short has one of its electrodes coupled to a first current limiting device and optionally has another electrode coupled to a second current limiting device. Also, one of the electrodes of that organic optoelectronic device, the first current limiting device, or the second current limiting device is patterned.

    摘要翻译： 本发明的实施例涉及诸如无源矩阵显示器，字母数字显示器，检测器阵列或太阳能电池阵列之类的电子设备。 电子器件包括多个有机光电子器件，并且这些有机光电子器件中的一个或多个保护不受短路。 被短路保护的一个或多个有机光电子器件中的每一个都具有耦合到第一限流器件的电极中的一个，并且可选地具有耦合到第二限流器件的另一个电极。 此外，该有机光电子器件的电极之一，第一限流器件或第二限流器件被图案化。

    Polymer organic light emitting device with improved color control
    9.
    发明授权
    Polymer organic light emitting device with improved color control 有权
    聚合物有机发光装置，具有改进的颜色控制

    公开(公告)号：US06680570B2

    公开(公告)日：2004-01-20

    申请号：US09814381

    申请日：2001-03-21

    申请人： Daniel B. Roitman ,  Homer Antoniadis

    发明人： Daniel B. Roitman ,  Homer Antoniadis

    IPC分类号： H01J162

    CPC分类号： H01L51/5265 ,  H01L51/5012

    摘要： An OLED for emitting light at a predetermined peak wavelength, &lgr;. The OLED includes an anode layer, a cathode layer and an electroluminescent layer constructed from an organic light emitting compound that generates light, including light having a wavelength equal to &lgr;, by the recombination of holes and electrons. The electroluminescent layer is electrically connected to the anode layer and the cathode layer and is located between the anode and cathode layers. The OLED includes a first reflector and a second reflector, displaced from one another. The anode layer or cathode layer can serve as one of the reflectors. A spacer layer constructed from a material that is transparent at &lgr; is included between the reflectors and has a thickness that is adjusted such that the optical path length between the first and second reflectors is equal to N &lgr;/2, where N is a positive integer.

    摘要翻译： 用于发射预定峰值波长λ的OLED。 OLED包括阳极层，阴极层和由有机发光化合物构成的电致发光层，其通过空穴和电子的复合产生包括波长等于λ的光的光。 电致发光层电连接到阳极层和阴极层并位于阳极和阴极层之间。 OLED包括彼此移位的第一反射器和第二反射器。 阳极层或阴极层可以用作反射器之一。 由λ构成的材料构成的间隔层包含在反射体之间，其厚度被调整为使得第一和第二反射器之间的光程长度等于Nλ/ 2，其中N是正整数 。

    LED doped with periflanthene for efficient red emission
    10.
    发明授权
    LED doped with periflanthene for efficient red emission 失效
    掺杂有紫外线的LED用于有效的红色发射

    公开(公告)号：US6004685A

    公开(公告)日：1999-12-21

    申请号：US997143

    申请日：1997-12-23

    申请人： Homer Antoniadis ,  Allen J. Bard

    发明人： Homer Antoniadis ,  Allen J. Bard

    IPC分类号： C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14

    CPC分类号： H01L51/5012 ,  C09K11/06 ,  H01L51/0056 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0078 ,  H01L51/0081 ,  Y10S428/917

    摘要： An OLED having a cathode constructed from a first conducting layer. An electron transport layer constructed from a first electron transport material overlays the cathode. An electroluminescent layer constructed from the first electron transport material doped with dibenzotetraphenylperiflanthene overlays the electron transport layer. A hole transport layer constructed from a first hole transport material overlays the electroluminescent layer. The anode overlays the hole transport layer. In one embodiment of the invention, a second hole transport layer constructed from a second hole transport material is sandwiched between the anode and the first hole transport layer. In a third embodiment of the invention, a second electron transport layer constructed from a second electron transport material is sandwiched between the electroluminescent layer and the first hole transport layer.

    摘要翻译： 一种具有由第一导电层构成的阴极的OLED。 由第一电子传输材料构成的电子传输层覆盖阴极。 由掺杂有二苯并四苯并噻吩的第一电子传输材料构成的电致发光层覆盖电子传输层。 由第一空穴传输材料构成的空穴传输层覆盖电致发光层。 阳极覆盖空穴传输层。 在本发明的一个实施例中，由第二空穴传输材料构成的第二空穴传输层夹在阳极和第一空穴传输层之间。 在本发明的第三实施例中，由第二电子传输材料构成的第二电子传输层夹在电致发光层和第一空穴传输层之间。