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    Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It
    1.
    发明申请
    Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It 有权
    包含缺陷减少区域的单晶半导体晶片及其制造方法

    公开(公告)号：US20110318546A1

    公开(公告)日：2011-12-29

    申请号：US13226772

    申请日：2011-09-07

    申请人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    发明人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    IPC分类号： B32B3/00

    CPC分类号： H01L21/268 ,  H01L29/32 ,  Y10T428/24802 ,  Y10T428/31678

    摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

    摘要翻译： 单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％ 半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。 可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置， 至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。

    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
    2.
    发明授权
    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
    具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片

    公开(公告)号：US07387676B2

    公开(公告)日：2008-06-17

    申请号：US11452870

    申请日：2006-06-14

    申请人： Wilfried von Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    发明人： Wilfried von Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    IPC分类号： C30B15/00

    CPC分类号： C30B15/203 ,  C30B29/06

    摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.

    摘要翻译： 在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩 该区域的尺寸不再超过临界尺寸。 在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
    3.
    发明申请
    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
    具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片

    公开(公告)号：US20060283374A1

    公开(公告)日：2006-12-21

    申请号：US11452870

    申请日：2006-06-14

    申请人： Wilfried Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    发明人： Wilfried Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B15/203 ,  C30B29/06

    摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.

    摘要翻译： 在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比率V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩 该区域的尺寸不再超过临界尺寸。 在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

    SOI wafer and process for producing it
    4.
    发明授权
    SOI wafer and process for producing it 有权
    SOI晶片及其制造方法

    公开(公告)号：US07122865B2

    公开(公告)日：2006-10-17

    申请号：US10853322

    申请日：2004-05-25

    申请人： Robert Hölzl ,  Dirk Dantz ,  Andreas Huber ,  Ulrich Lambert ,  Reinhold Wahlich

    发明人： Robert Hölzl ,  Dirk Dantz ,  Andreas Huber ,  Ulrich Lambert ,  Reinhold Wahlich

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L21/2007 ,  H01L21/76254

    摘要： An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 μm, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2.A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 1012/cm3 and of vacancy agglomerates of at most 105/cm3. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.

    摘要翻译： SOI晶片包括由硅制成的衬底，具有至少1.6W /（Km）的热导率和厚度为10nm至10μm的单晶硅层的电绝缘层，标准偏差 从平均层厚度至多5％，密度至多为0.5HF缺陷/ cm 2。 一种制造这种SOI晶片的方法，其中由硅制成的衬底晶片通过预先施加的电绝缘材料层与施主晶片接合。 供体晶片承载单晶硅的施主层，其空位浓度至多为10 12 / cm 3，空位团聚体最多为10 5/3/3。 在晶片已经接合之后，施主晶片的厚度被减小，使得具有这些性质的单晶硅层由施主层形成，该单晶硅层通过该晶体管接合到衬底晶片 电绝缘材料层。

    Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions And Method For Producing It
    5.
    发明申请
    Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions And Method For Producing It 有权
    包含缺陷区域的单晶半导体晶片及其制造方法

    公开(公告)号：US20080026232A1

    公开(公告)日：2008-01-31

    申请号：US11828392

    申请日：2007-07-26

    申请人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    发明人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    IPC分类号： B32B15/04 ,  H01L21/268

    CPC分类号： H01L21/268 ,  H01L29/32 ,  Y10T428/24802 ,  Y10T428/31678

    摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

    摘要翻译： 单晶半导体晶片具有缺陷减少区域，缺陷减少区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷密度，以及 占据半导体晶片的平面面积的10％至100％的总面积比，其中半导体晶片的其余区域具有比缺陷减少区域明显更高的缺陷密度。 可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来生产晶片，其中每个位置以1GW / m 2的功率密度照射， SUP>至10GW / m 2至少25ms，其中激光器发射波长在晶片半导体材料的吸收边缘上方的波长，并且其中晶片的温度升高小于20 K作为照射的结果。

    Process for producing silicon semiconductor wafers with low defect density
    6.
    发明授权
    Process for producing silicon semiconductor wafers with low defect density 失效
    具有低缺陷密度的硅半导体晶片的制造方法

    公开(公告)号：US5935320A

    公开(公告)日：1999-08-10

    申请号：US918843

    申请日：1997-08-26

    申请人： Dieter Graef ,  Wilfried Von Ammon ,  Reinhold Wahlich ,  Peter Krottenthaler ,  Ulrich Lambert

    发明人： Dieter Graef ,  Wilfried Von Ammon ,  Reinhold Wahlich ,  Peter Krottenthaler ,  Ulrich Lambert

    IPC分类号： C30B29/06 ,  C30B13/00 ,  C30B15/00 ,  C30B33/02 ,  H01L21/322 ,  H01L21/324

    CPC分类号： C30B15/00 ,  C30B13/00 ,  C30B29/06 ,  Y10S117/916

    摘要： A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

    摘要翻译： 一种制造低缺陷密度的硅晶片的方法是其中a）通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶，然后冷却 在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b）处理单晶以形成硅晶片; 和c）将硅晶片在至少1000℃的温度下退火至少1小时。 此外，可以基于上述（a）的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。

    Process for producing a single crystal
    7.
    发明授权
    Process for producing a single crystal 失效
    单晶生产工艺

    公开(公告)号：US06228164B1

    公开(公告)日：2001-05-08

    申请号：US09318659

    申请日：1999-05-25

    申请人： Wilfried von Ammon ,  Rüdiger Schmolke ,  Dieter Gräf ,  Ulrich Lambert

    发明人： Wilfried von Ammon ,  Rüdiger Schmolke ,  Dieter Gräf ,  Ulrich Lambert

    IPC分类号： C30B2906

    CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

    摘要： A process for producing a silicon single crystal has the crystal being pulled using the Czochralski method while being doped with oxygen and nitrogen. The single crystal is doped with oxygen at a concentration of less than 6.5*1017 atoms cm−3 and with nitrogen at a concentration of more than 5*1013 atoms cm−3 while the single crystal is being pulled. Another process is for producing a single crystal from a silicon melt, in which the single crystal is doped with nitrogen and the single crystal is pulled at a rate V, an axial temperature gradient G(r) being set up at the interface of the single crystal and the melt, in which the ratio V/G(r) in the radial direction is at least partially less than 1.3*10−3cm2min−1 K−1.

    摘要翻译： 一种制造硅单晶的方法，在掺杂氧和氮的同时，使用Czochralski法拉伸晶体。 单晶掺杂浓度小于6.5×1017原子cm-3的氧，浓度大于5×1013原子cm-3的氮，同时拉伸单晶。 另一种方法是从硅熔体制造单晶，其中单晶掺杂有氮，单晶以速率V被拉动，轴向温度梯度G（r）被设置在单晶的界面处 晶体和熔体，其中径向方向上的比率V / G（r）至少部分地小于1.3×10-3cm2min-1K-1。

    Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it
    8.
    发明授权
    Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it 有权
    包含缺陷区域的单晶半导体晶片及其制造方法

    公开(公告)号：US08216361B2

    公开(公告)日：2012-07-10

    申请号：US13226772

    申请日：2011-09-07

    申请人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    发明人： Dieter Knerer ,  Andreas Huber ,  Ulrich Lambert ,  Friedrich Passek

    IPC分类号： C30B29/04

    CPC分类号： H01L21/268 ,  H01L29/32 ,  Y10T428/24802 ,  Y10T428/31678

    摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

    摘要翻译： 单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％ 半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。 可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置， 至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。