公开(公告)号：US20230352584A1

公开(公告)日：2023-11-02

申请号：US17734372

申请日：2022-05-02

申请人： Dmitri Evgenievich Nikonov ,  Chia-Ching Lin ,  Uygar E. Avci ,  Tanay A. Gosavi ,  Raseong Kim ,  Ian Alexander Young ,  Hai Li ,  Ashish Verma Penumatcha ,  Ramamoorthy Ramesh ,  Darrell G. Schlom

发明人： Dmitri Evgenievich Nikonov ,  Chia-Ching Lin ,  Uygar E. Avci ,  Tanay A. Gosavi ,  Raseong Kim ,  Ian Alexander Young ,  Hai Li ,  Ashish Verma Penumatcha ,  Ramamoorthy Ramesh ,  Darrell G. Schlom

IPC分类号： H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H10B51/30

CPC分类号： H01L29/78391 ,  H01L29/516 ,  H01L29/6684 ,  H10B51/30

摘要： Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric gate dielectric that is lattice matched to the channel of the transistor. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one transistor memory cell.

公开(公告)号：US20230353157A1

公开(公告)日：2023-11-02

申请号：US17733166

申请日：2022-04-29

申请人： Tanay A. Gosavi ,  Chia-Ching Lin ,  Sasikanth Manipatruni ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  Ramamoorthy Ramesh ,  Darrell G. Schlom ,  Megan E. Holtz ,  Rachel A. Steinhardt

发明人： Tanay A. Gosavi ,  Chia-Ching Lin ,  Sasikanth Manipatruni ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  Ramamoorthy Ramesh ,  Darrell G. Schlom ,  Megan E. Holtz ,  Rachel A. Steinhardt

IPC分类号： H03K19/18 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

CPC分类号： H03K19/18 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

摘要： Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.