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    Method and system for providing a magnetic tunneling junction using thermally assisted switching
    1.
    发明授权
    Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
    使用热辅助切换提供磁隧道结的方法和系统

    公开(公告)号：US08698259B2

    公开(公告)日：2014-04-15

    申请号：US13332282

    申请日：2011-12-20

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    IPC分类号： H01L27/22

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING
    2.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
    使用热辅助开关提供磁性隧道接头的方法和系统

    公开(公告)号：US20130154035A1

    公开(公告)日：2013-06-20

    申请号：US13332282

    申请日：2011-12-20

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    IPC分类号： H01L27/22 ,  G11B5/84 ,  B05D5/12 ,  G11B5/66 ,  G11B5/673

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A GRADED MAGNETIC FREE LAYER
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A GRADED MAGNETIC FREE LAYER 有权
    用于提供具有分级磁性层的磁性结的方法和系统

    公开(公告)号：US20140151830A1

    公开(公告)日：2014-06-05

    申请号：US13691873

    申请日：2012-12-03

    申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC分类号： H01L29/82 ,  H01L29/66

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a gradient in a critical switching current density (Jc0) such that a first Jc0 of a first portion of the free layer is lower than a second Jc0 of a second portion of the free layer. The second portion of the free layer is further from the nonmagnetic spacer layer than the first portion is. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有临界开关电流密度（Jc0）的梯度，使得自由层的第一部分的第一Jc0低于自由层的第二部分的第二部分Jc0。 自由层的第二部分比第一部分更远离非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE
    4.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE 有权
    提供使用偏置结构进行精密切换配置的磁连接的方法和系统

    公开(公告)号：US20120319221A1

    公开(公告)日：2012-12-20

    申请号：US13495830

    申请日：2012-06-13

    申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

    Method and system for providing multiple self-aligned logic cells in a single stack
    7.
    发明授权
    Method and system for providing multiple self-aligned logic cells in a single stack 有权
    在单个堆叠中提供多个自对准逻辑单元的方法和系统

    公开(公告)号：US09236561B2

    公开(公告)日：2016-01-12

    申请号：US13604182

    申请日：2012-09-05

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

    IPC分类号： H01L21/00 ,  H01L29/82 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  G11C11/56 ,  G11C11/16 ,  H01L27/22

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.

    摘要翻译： 提供包括存储单元的磁性装置。 每个存储器单元可以存储对应于多个数据存储层的多个位。 在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。 期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。 存储包括用于每个存储器单元的多个层的磁阻堆叠。 存储单元包括数据存储层。 数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。 在层上提供对应于存储单元的掩模。 存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

    Method and system for providing a magnetic junction configured for precessional switching using a bias structure
    9.
    发明授权
    Method and system for providing a magnetic junction configured for precessional switching using a bias structure 有权
    用于提供使用偏置结构配置为进动切换的磁结的方法和系统

    公开(公告)号：US09142758B2

    公开(公告)日：2015-09-22

    申请号：US13495830

    申请日：2012-06-13

    申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。