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    Thin film transistor substrate and method of fabricating the same
    1.
    发明授权
    Thin film transistor substrate and method of fabricating the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US08558230B2

    公开(公告)日：2013-10-15

    申请号：US12756323

    申请日：2010-04-08

    申请人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    发明人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    IPC分类号： H01L29/04 ,  H01L29/10

    CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/7869

    摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

    摘要翻译： 提供薄膜晶体管（TFT）基板及其制造方法。 薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。 薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。 氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。 数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。 阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US20100276686A1

    公开(公告)日：2010-11-04

    申请号：US12756323

    申请日：2010-04-08

    申请人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    发明人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L21/336

    CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/7869

    摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

    摘要翻译： 提供薄膜晶体管（TFT）基板及其制造方法。 薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。 薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。 氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。 数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。 阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

    Thin-film transistor substrate having oxide active layer patterns and method of fabricating the same
    3.
    发明授权
    Thin-film transistor substrate having oxide active layer patterns and method of fabricating the same 有权
    具有氧化物活性层图案的薄膜晶体管衬底及其制造方法

    公开(公告)号：US08035110B2

    公开(公告)日：2011-10-11

    申请号：US12498816

    申请日：2009-07-07

    申请人： Do-Hyun Kim ,  Pil-Sang Yun ,  Ki-Won Kim ,  Dong-Hoon Lee ,  Chang-Oh Jeong

    发明人： Do-Hyun Kim ,  Pil-Sang Yun ,  Ki-Won Kim ,  Dong-Hoon Lee ,  Chang-Oh Jeong

    IPC分类号： H01L29/04

    CPC分类号： H01L29/7869 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

    摘要： A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

    摘要翻译： 薄膜晶体管（TFT）基板具有改善的电性能和减少的外观缺陷以及制造TFT基板的方法。 TFT基板包括：形成在绝缘基板的表面上的栅极布线; 氧化物活性层图案，其形成在栅极布线上并且包括第一材料的氧化物; 缓冲层图案，其设置在所述氧化物活性层图案上以直接接触所述氧化物活性层图案并且包括第二材料; 以及形成在所述缓冲层图案上以绝缘地穿过所述栅极布线的数据布线，其中所述第一材料的氧化物的吉布斯自由能低于所述第二材料的氧化物的吉布斯自由能。

    Display substrate
    5.
    发明授权
    Display substrate 有权
    显示基板

    公开(公告)号：US08044398B2

    公开(公告)日：2011-10-25

    申请号：US12331138

    申请日：2008-12-09

    申请人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    发明人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L27/01 ,  H01L27/12

    CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908

    摘要： A display substrate includes an insulating substrate, a thin-film transistor (TFT), a pixel electrode, a signal line and a pad part. The insulating substrate has a display region and a peripheral region surrounding the display region. The TFT is in the display region of the insulating substrate. The pixel electrode is in the display region of the insulating substrate and electrically connected to the TFT. The signal line is on the insulating substrate and extends from the peripheral region toward the display region. The pad part is in the peripheral region and electrically connects to the signal line. The pad part is formed in a trench of the insulating substrate and includes a region that extends into the insulating substrate. Therefore, the signal line may be securely attached to the insulating substrate.

    摘要翻译： 显示基板包括绝缘基板，薄膜晶体管（TFT），像素电极，信号线和焊盘部分。 绝缘基板具有显示区域和围绕显示区域的周边区域。 TFT位于绝缘基板的显示区域。 像素电极在绝缘基板的显示区域中并与TFT电连接。 信号线位于绝缘基板上，并从周边区域向显示区域延伸。 焊盘部分在外围区域中并且电连接到信号线。 衬垫部分形成在绝缘衬底的沟槽中，并且包括延伸到绝缘衬底中的区域。 因此，信号线可以牢固地附接到绝缘基板。

    DISPLAY SUBSTRATE
    6.
    发明申请
    DISPLAY SUBSTRATE 有权
    显示基板

    公开(公告)号：US20090179203A1

    公开(公告)日：2009-07-16

    申请号：US12331138

    申请日：2008-12-09

    申请人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    发明人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    IPC分类号： H01L33/00 ,  H01L21/768 ,  G03F1/00 ,  G03F7/20

    CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908

    摘要： A display substrate includes an insulating substrate, a thin-film transistor (TFT), a pixel electrode, a signal line and a pad part. The insulating substrate has a display region and a peripheral region surrounding the display region. The TFT is in the display region of the insulating substrate. The pixel electrode is in the display region of the insulating substrate and electrically connected to the TFT. The signal line is on the insulating substrate and extends from the peripheral region toward the display region. The pad part is in the peripheral region and electrically connects to the signal line. The pad part is formed in a trench of the insulating substrate and includes a region that extends into the insulating substrate. Therefore, the signal line may be securely attached to the insulating substrate.

    摘要翻译： 显示基板包括绝缘基板，薄膜晶体管（TFT），像素电极，信号线和焊盘部分。 绝缘基板具有显示区域和围绕显示区域的周边区域。 TFT位于绝缘基板的显示区域。 像素电极在绝缘基板的显示区域中并与TFT电连接。 信号线位于绝缘基板上，并从周边区域向显示区域延伸。 焊盘部分在外围区域中并且电连接到信号线。 衬垫部分形成在绝缘衬底的沟槽中，并且包括延伸到绝缘衬底中的区域。 因此，信号线可以牢固地附接到绝缘基板。