公开(公告)号：US20070231716A1

公开(公告)日：2007-10-04

申请号：US11758258

申请日：2007-06-05

申请人： Jeong-Yun LEE ,  Jin-Min KIM ,  Hae-Young JEONG ,  Young-Hwa NO ,  Sang-Joon YOON ,  Sung-Yong CHO

发明人： Jeong-Yun LEE ,  Jin-Min KIM ,  Hae-Young JEONG ,  Young-Hwa NO ,  Sang-Joon YOON ,  Sung-Yong CHO

IPC分类号： G03F1/00

CPC分类号： H01J37/32724 ,  G03F1/80 ,  H01J37/32009 ,  H01J2237/2001

摘要： A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

摘要翻译： 用于制造光掩模的蚀刻工艺中使用的等离子体蚀刻装置的等离子体蚀刻室和使用其的光掩模的制造方法。 等离子体蚀刻室包括具有用于支撑光掩模基板的支撑表面和围绕支撑表面的顶表面的电极，沿着支撑表面的周缘安装的传热元件，以及用于向传热元件供热的加热器 。 在光掩模的制造方法中，在透明基板上形成遮光层。 在遮光层上形成光致抗蚀剂层图案，以部分地曝光遮光层。 在使透明基板的周边边缘的至少一部分的温度保持高于温度的状态下，将遮光层蚀刻以形成遮光层图案，使用具有光致抗蚀剂层图案的等离子体作为蚀刻掩模 在透明基板的中心。

公开(公告)号：US08871105B2

公开(公告)日：2014-10-28

申请号：US13416465

申请日：2012-03-09

申请人： Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller ,  Qing Xu ,  Seongjun Heo ,  Jin Hwan Ham ,  Sang Joon Yoon ,  Camelia Rusu

发明人： Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller ,  Qing Xu ,  Seongjun Heo ,  Jin Hwan Ham ,  Sang Joon Yoon ,  Camelia Rusu

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/30655 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3086

摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

摘要翻译： 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并且产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

公开(公告)号：US20130237062A1

公开(公告)日：2013-09-12

申请号：US13416465

申请日：2012-03-09

申请人： Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller ,  Qing Xu ,  Seongjun Heo ,  Jin Hwan Ham ,  Sang Joon Yoon ,  Camelia Rusu

发明人： Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller ,  Qing Xu ,  Seongjun Heo ,  Jin Hwan Ham ,  Sang Joon Yoon ,  Camelia Rusu

IPC分类号： H01L21/3065

CPC分类号： H01L21/30655 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3086

摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

摘要翻译： 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

公开(公告)号：US10115602B2

公开(公告)日：2018-10-30

申请号：US15444597

申请日：2017-02-28

申请人： Seung Jae Jung ,  Sang Joon Yoon ,  Yong Hyun Kwon ,  Dae Hyun Jang ,  Ha Na Kim

发明人： Seung Jae Jung ,  Sang Joon Yoon ,  Yong Hyun Kwon ,  Dae Hyun Jang ,  Ha Na Kim

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/115 ,  H01L29/10 ,  H01L27/11556 ,  H01L27/11582

摘要： A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.

公开(公告)号：US06553686B2

公开(公告)日：2003-04-29

申请号：US09972486

申请日：2001-10-06

申请人： Yong Ji ,  Sang-Joon Yoon

发明人： Yong Ji ,  Sang-Joon Yoon

IPC分类号： F26B1900

CPC分类号： A23N12/10 ,  A47J37/047

摘要： The present invention relates to a grain roasting apparatus in which a blower is installed at one side of a body having a support at a lower portion of the same, a heated air flow path is installed in the blower, a heater is provided, a peel collecting port and a discharge port are installed at the other side of the body, rotation portions are installed in an upper portion of the heated air flow path and an upper portion of the discharging port, respectively, a rotary drum is installed in the rotation portions, rotation members are rotated together with the rotary drum, the rotary drum is inserted into the rotation members, the rotary is installed eccentrically about a rotation center, support portions are installed opposite each other at both ends of the same, a heated air flow port having a net and connected with the heated air flow path is protruded from one side of the support, the heated air inlet is inserted into an insertion portion of the rotary port, respectively, and is supported therein, a ring gear is installed in an outer portion of the rotation member, and the ring gear is engaged with a worm gear of the driving motor installed in a lower portion of the body for thereby roasting the grains of coffee and grains in a state that the rotary drum is in a twisting state.

摘要翻译： 本发明涉及一种在其下部具有支撑体的主体的一侧安装鼓风机的烧烤装置，在鼓风机中设置加热空气流路，设置加热器，剥离 收集口和排出口安装在主体的另一侧，旋转部分安装在加热空气流路的上部，排出口的上部分别安装在旋转部分中 旋转构件与旋转鼓一起旋转，旋转滚筒插入旋转构件中，旋转体围绕旋转中心偏心地安装，支撑部分在其两端彼此相对地安装，加热空气流动口 具有网并且与加热的空气流动路径连接的部分从支撑体的一侧突出，加热的空气入口分别插入旋转端口的插入部分，并且是支架 环形齿轮安装在旋转构件的外部，并且环形齿轮与安装在主体的下部中的驱动电动机的蜗轮啮合，从而将咖啡和谷物的谷物焙烧在 说明旋转滚筒处于扭转状态。

公开(公告)号：US20180033639A1

公开(公告)日：2018-02-01

申请号：US15444597

申请日：2017-02-28

申请人： Seung Jae JUNG ,  Sang Joon YOON ,  Yong Hyun KWON ,  Dae Hyun JANG ,  Ha Na KIM

发明人： Seung Jae JUNG ,  Sang Joon YOON ,  Yong Hyun KWON ,  Dae Hyun JANG ,  Ha Na KIM

IPC分类号： H01L21/311 ,  H01L21/308 ,  H01L21/3065 ,  H01L27/115 ,  H01L29/10

CPC分类号： H01L21/31144 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/31116 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1037

摘要： A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.

公开(公告)号：US07601469B2

公开(公告)日：2009-10-13

申请号：US11758258

申请日：2007-06-05

申请人： Jeong-Yun Lee ,  Jin-Min Kim ,  Hae-Young Jeong ,  Young-Hwa No ,  Sang-Joon Yoon ,  Sung-Yong Cho

发明人： Jeong-Yun Lee ,  Jin-Min Kim ,  Hae-Young Jeong ,  Young-Hwa No ,  Sang-Joon Yoon ,  Sung-Yong Cho

IPC分类号： G03F1/00 ,  G03F7/26

CPC分类号： H01J37/32724 ,  G03F1/80 ,  H01J37/32009 ,  H01J2237/2001

摘要： A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.