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    Method of manufacturing a flash memory device
    1.
    发明申请
    Method of manufacturing a flash memory device 审中-公开
    制造闪存装置的方法

    公开(公告)号：US20060148175A1

    公开(公告)日：2006-07-06

    申请号：US11320586

    申请日：2005-12-30

    Applicant: Dong-Oog Kim ,  Chang-Hun Han

    Inventor： Dong-Oog Kim ,  Chang-Hun Han

    IPC: H01L21/336

    CPC classification number: H01L27/115 ,  H01L27/11521

    Abstract: A method of manufacturing a semiconductor device includes forming a polysilicon layer on a trench isolation layer and a tunnel oxide layer formed on a semiconductor substrate, and doping the polysilicon layer with germanium or argon. The doped polysilicon layer is patterned to form a floating gate electrode layer pattern. A charge-trapping layer is formed on the floating gate electrode layer pattern, and a control gate electrode layer pattern is formed on the charge-trapping layer.

    Abstract translation: 制造半导体器件的方法包括在沟槽隔离层上形成多晶硅层，在半导体衬底上形成隧道氧化物层，并用锗或氩掺杂多晶硅层。 图案化掺杂多晶硅层以形成浮栅电极层图案。 在浮栅电极层图案上形成电荷捕获层，并且在电荷捕获层上形成控制栅电极层图案。

    Method of manufacturing a gate in a flash memory device
    2.
    发明申请
    Method of manufacturing a gate in a flash memory device 审中-公开
    在闪存器件中制造栅极的方法

    公开(公告)号：US20060148176A1

    公开(公告)日：2006-07-06

    申请号：US11320687

    申请日：2005-12-30

    Applicant: Dong-Oog Kim ,  Chang-Hun Han

    Inventor： Dong-Oog Kim ,  Chang-Hun Han

    IPC: H01L21/336

    CPC classification number: H01L27/115 ,  H01L27/11519 ,  H01L27/11521

    Abstract: A method of manufacturing a gate in a flash memory device. The method includes forming a stacking structure including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate on a semiconductor substrate. The further includes removing a remaining portion of the tunnel oxide layer exposed by the control gate by wet etching to a degree that the semiconductor substrate is exposed, and forming an oxide layer covering the exposed portion of the semiconductor substrate and both sidewalls of the floating gate and the control gate.

    Abstract translation: 一种在闪速存储器件中制造栅极的方法。 该方法包括在半导体衬底上形成包括隧道氧化物层，浮置栅极，电介质层和控制栅极的堆叠结构。 还包括通过湿蚀刻去除由控制栅极暴露的隧道氧化物层的剩余部分到半导体衬底暴露的程度，并且形成覆盖半导体衬底的暴露部分的氧化物层和浮置栅极的两个侧壁 和控制门。

    Resin composition for optical film, and polarizer protective film and liquid crystal display including the same
    6.
    发明授权
    Resin composition for optical film, and polarizer protective film and liquid crystal display including the same 有权
    用于光学膜的树脂组合物，以及偏振片保护膜和包括其的液晶显示器

    公开(公告)号：US08623960B2

    公开(公告)日：2014-01-07

    申请号：US13355156

    申请日：2012-01-20

    Applicant: Eun-Jung Choi ,  Byoung-Il Kang ,  Chang-Hun Han ,  Jae-Bum Seo

    Inventor： Eun-Jung Choi ,  Byoung-Il Kang ,  Chang-Hun Han ,  Jae-Bum Seo

    IPC: C08L69/00 ,  C08L33/10 ,  C08L33/08 ,  G02B5/30 ,  C08J5/18

    CPC classification number: C08L33/08 ,  Y10T428/10 ,  C08L69/00

    Abstract: Provided are a resin composition including an acryl-based copolymer resin including an alkyl(meth)acrylate-based monomer and an imide-based monomer, additionally copolymerizable with a styrene-based monomer, and a polycarbonate-based resin having a melt index (MI) of 30 g/10 min or more under conditions of a load of 1.2 kg and a temperature of 300° C., a polarizer protective film including the resin composition, and a liquid crystal display including the polarizer protective film. The polarizer protective film according to the present invention has excellent heat resistance, transparency, and optical properties.

    Abstract translation: 本发明提供一种树脂组合物，其包括可与苯乙烯类单体共聚的（甲基）丙烯酸烷基酯单体和酰亚胺系单体的丙烯酸类共聚物树脂和熔融指数（MI）的聚碳酸酯类树脂 ）在负载为1.2kg，温度为300℃的条件下为30g / 10分钟以上，含有该树脂组合物的偏振片保护膜，以及包含该偏振片保护膜的液晶显示装置。 根据本发明的偏振片保护膜具有优异的耐热性，透明性和光学性质。

    Image sensor and method for manufacturing the same
    8.
    发明授权
    Image sensor and method for manufacturing the same 失效
    图像传感器及其制造方法

    公开(公告)号：US08080825B2

    公开(公告)日：2011-12-20

    申请号：US12344438

    申请日：2008-12-26

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L31/02 ,  H01L31/0376 ,  H01L21/04

    CPC classification number: H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

    Abstract translation: 图像传感器可以包括具有包括导线的电路的第一基板和形成在第一基板上和/或上方的硅层，以选择性地接触导线。 图像传感器可以包括在与硅层接触并且电连接到电线时结合到第一衬底的光电二极管。 可以实现每个单位像素具有复杂的电路而不降低光敏性。 还可以在设计中植入附加的片上电路。

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