Method for manufacturing metal structure having different heights
    2.
    发明授权
    Method for manufacturing metal structure having different heights 有权
    具有不同高度的金属结构的制造方法

    公开(公告)号:US07148141B2

    公开(公告)日:2006-12-12

    申请号:US11012312

    申请日:2004-12-16

    IPC分类号: H01L21/44

    摘要: Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.

    摘要翻译: 公开了一种在半导体衬底上形成具有不同高度的多个金属结构体的方法。 所公开的制造具有不同高度的金属结构体的方法包括:在半导体衬底上形成多个种子层以具有与要形成的金属结构相对应的高度,使得这些层可以电分离,使用 电镀模具,并且向相应的种子层施加不同的电流,使得可以针对每个种子层调整镀层厚度。 因此,可以通过分别进行一次的电镀模具成型工序和电镀工序来获得具有不同高度的多个金属结构体。

    Apparatus to sense temperature of ink-jet head
    4.
    发明授权
    Apparatus to sense temperature of ink-jet head 有权
    用于感测喷墨头温度的装置

    公开(公告)号:US08419158B2

    公开(公告)日:2013-04-16

    申请号:US12139652

    申请日:2008-06-16

    IPC分类号: B41J29/393

    摘要: An apparatus to sense the temperature of an ink-jet head includes at least one or more CMOS (complementary metal oxide semiconductor) lateral BJTs (bipolar junction transistors) to sense the temperature of the ink-jet head, and a current supply unit to supply a current to the CMOS lateral BJTs. Minimum sized CMOS lateral BJTs are applied to an ink-jet printer head so that precise temperature control can be performed in a shuttle or array type ink-jet printer.

    摘要翻译: 感测喷墨头的温度的装置包括至少一个或多个CMOS(互补金属氧化物半导体)横向BJT(双极结型晶体管),以感测喷墨头的温度,以及电流供应单元 电流到CMOS侧向BJT。 将最小尺寸的CMOS侧向BJT施加到喷墨打印机头,使得可以在梭式或阵列式喷墨打印机中进行精确的温度控制。

    Method of fabricating inkjet print heads
    5.
    发明申请
    Method of fabricating inkjet print heads 有权
    制造喷墨打印头的方法

    公开(公告)号:US20070126772A1

    公开(公告)日:2007-06-07

    申请号:US11453012

    申请日:2006-06-15

    IPC分类号: B41J2/015

    摘要: A method of fabricating inkjet print heads usable in an ink jet printer. The method of fabricating ink jet print heads includes preparing a plurality of ink jet print heads on a wafer while forming sub sidewalls around the ink jet print heads when the ink jet print heads are being prepared, attaching protection films onto the sub sidewalls of the wafer and the ink jet print heads, and dicing the ink jet print heads and detaching the individual ink jet print heads from the wafer. In the method, the ink jet print heads are diced in a wafer unit. Particularly, connect pads of the ink jet print heads can be prevented from being contaminated by the protection films.

    摘要翻译: 一种制造可用于喷墨打印机的喷墨打印头的方法。 制造喷墨打印头的方法包括:当准备喷墨打印头时,在晶片上准备多个喷墨打印头,同时在喷墨打印头周围形成副侧壁,将保护膜附着在晶片的子侧壁上 和喷墨打印头,并且对喷墨打印头进行切割并将各个喷墨打印头从晶片上分离出来。 在该方法中,喷墨打印头在晶片单元中切割。 特别地,可以防止喷墨打印头的连接垫被保护膜污染。

    Micro-optical switching device, image display apparatus including micro-optical switching device, and method of manufacturing micro-optical switching device
    6.
    发明授权
    Micro-optical switching device, image display apparatus including micro-optical switching device, and method of manufacturing micro-optical switching device 有权
    微光开关装置,包括微光开关装置的图像显示装置和微光开关装置的制造方法

    公开(公告)号:US09164278B2

    公开(公告)日:2015-10-20

    申请号:US13461387

    申请日:2012-05-01

    IPC分类号: G02B26/02 G02B26/08

    CPC分类号: G02B26/0841

    摘要: A micro-optical switching device, an image display apparatus including the micro-optical switching device, and a method of manufacturing the micro-optical switching device are provided. The micro-optical switching device includes a substrate; a first electrode disposed on the substrate and including a first opening array, wherein the first opening array includes a plurality of openings; and a second electrode disposed spaced apart from the first electrode and including a second opening array including a plurality of openings, wherein the plurality of openings of the second opening array do not overlap with the plurality of openings of the first opening array.

    摘要翻译: 提供一种微型光开关装置,包括该微型光开关装置的图像显示装置以及该微型光开关装置的制造方法。 微光开关装置包括:基板; 第一电极,其设置在所述基板上并且包括第一开口阵列,其中所述第一开口阵列包括多个开口; 以及第二电极,与第一电极间隔开并且包括包括多个开口的第二开口阵列,其中第二开口阵列的多个开口不与第一开口阵列的多个开口重叠。

    Thermal inkjet printhead
    7.
    发明授权
    Thermal inkjet printhead 有权
    热喷墨打印头

    公开(公告)号:US07959265B2

    公开(公告)日:2011-06-14

    申请号:US11483721

    申请日:2006-07-11

    IPC分类号: B41J2/045 B41J2/015

    CPC分类号: B41J2/14129 B41J2/1408

    摘要: Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.

    摘要翻译: 提供了热喷墨打印头。 喷墨打印头包括基板; 形成在所述基板上的绝缘层; 形成在绝缘层上的加热器和用于向加热器施加电流的电极; 层叠在所述绝缘层上并且包括墨水室的室层; 喷嘴层,其层叠在所述室层上并且包括喷嘴; 以及形成在所述绝缘层内部的至少一层传热层,并且将由所述加热器产生的热量散发到所述基板。

    Schottky diode having low breakdown voltage and method for fabricating the same
    8.
    发明授权
    Schottky diode having low breakdown voltage and method for fabricating the same 有权
    具有低击穿电压的肖特基二极管及其制造方法

    公开(公告)号:US07893442B2

    公开(公告)日:2011-02-22

    申请号:US11702489

    申请日:2007-02-06

    CPC分类号: H01L29/872 H01L29/417

    摘要: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

    摘要翻译: 提供了在射频识别(RFID)标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底,围绕N型阱的周围的绝缘层,以将N型阱与 P型衬底,部分地形成在N型阱的上表面的一部分区域中的N +掺杂层,部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层, 类型良好,形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

    Schottky diode having low breakdown voltage and method for fabricating the same
    10.
    发明申请
    Schottky diode having low breakdown voltage and method for fabricating the same 有权
    具有低击穿电压的肖特基二极管及其制造方法

    公开(公告)号:US20070278608A1

    公开(公告)日:2007-12-06

    申请号:US11702489

    申请日:2007-02-06

    IPC分类号: H01L29/861 H01L21/44

    CPC分类号: H01L29/872 H01L29/417

    摘要: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

    摘要翻译: 提供了在射频识别(RFID)标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底,围绕N型阱的周围的绝缘层,以将N型阱与 P型衬底,部分地形成在N型阱的上表面的一部分区域中的N +掺杂层,部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层, 类型良好,形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。