公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC分类号： H01J3700

CPC分类号： H01J37/3175 ,  H01J2237/31781

摘要： An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

摘要翻译： 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US20080257861A1

公开(公告)日：2008-10-23

申请号：US11882112

申请日：2007-07-30

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： B44C1/22

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US07282446B2

公开(公告)日：2007-10-16

申请号：US10819143

申请日：2004-04-07

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： H01L21/302

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US20070207619A1

公开(公告)日：2007-09-06

申请号：US10819143

申请日：2004-04-07

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US06998162B2

公开(公告)日：2006-02-14

申请号：US10441122

申请日：2003-05-20

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

IPC分类号： B32B3/02

CPC分类号： G11B7/26 ,  G11B7/24035 ,  G11B7/241 ,  Y10T428/21

摘要： An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.

摘要翻译： 提供具有相变材料膜的光记录介质和制造光记录介质的方法。 在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。 接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。 此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。 然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。 光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

公开(公告)号：US07901586B2

公开(公告)日：2011-03-08

申请号：US11882112

申请日：2007-07-30

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US06913984B2

公开(公告)日：2005-07-05

申请号：US10743377

申请日：2003-12-23

申请人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

发明人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

IPC分类号： B82B1/00 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/76

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792 ,  Y10S977/723 ,  Y10S977/774

摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

摘要翻译： 利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔 通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层 作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以 用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。