摘要:
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
摘要:
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
摘要:
A coordinate measuring machine (1) including a plane (25a) in which there is arranged a movable measurement table (20) moving the mask (2) correspondingly in the plane (25a), at least one objective (9) and a detector (11), an incident light source (14) arranged to provide incident light and/or a transmitted light source (6) arranged to provide transmitted light, wherein the mask (2) has at least a first area (41) and a second area (42), wherein the first area (41) and the second area (42) comprise different materials differing in their transmission or reflection properties.
摘要:
A coordinate measuring machine (1) including a plane (25a) in which there is arranged a movable measurement table (20) moving the mask (2) correspondingly in the plane (25a), at least one objective (9) and a detector (11), an incident light source (14) arranged to provide incident light and/or a transmitted light source (6) arranged to provide transmitted light, wherein the mask (2) has at least a first area (41) and a second area (42), wherein the first area (41) and the second area (42) comprise different materials differing in their transmission or reflection properties.
摘要:
A method for the reproducible determination of the positions of structures (3) on a mask (2) is disclosed. A pellicle frame (30) is firmly attached to the mask (2). A theoretical model of the bending of the mask (2) with the firmly attached pellicle frame (30) is calculated, wherein material properties of the mask (2), of the pellicle frame (30), and of the attaching means between the pellicle frame (30) and the mask (2) are taken into account in the calculation of the bending of the mask (2). For the calculation of the bending of the mask (2) its contact with three support points is considered. The positions of the structures (3) on the mask (2) are measured with a metrology tool (1). The measured positions of each structure are corrected with the theoretical model of the bending of the mask at the position of the respectively measured structure.
摘要:
A method for the reproducible determination of the positions of structures (3) on a mask (2) is disclosed. A pellicle frame (30) is firmly attached to the mask (2). A theoretical model of the bending of the mask (2) with the firmly attached pellicle frame (30) is calculated, wherein material properties of the mask (2), of the pellicle frame (30), and of the attaching means between the pellicle frame (30) and the mask (2) are taken into account in the calculation of the bending of the mask (2). For the calculation of the bending of the mask (2) its contact with three support points is considered. The positions of the structures (3) on the mask (2) are measured with a metrology tool (1). The measured positions of each structure are corrected with the theoretical model of the bending of the mask at the position of the respectively measured structure.