摘要:
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
摘要:
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
摘要:
Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要:
Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one tot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要:
Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one tot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要:
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要:
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要:
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要:
Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要:
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.