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    Methods and Systems for Creating or Performing a Dynamic Sampling Scheme for a Process During Which Measurements Are Performed on Wafers
    2.
    发明申请
    Methods and Systems for Creating or Performing a Dynamic Sampling Scheme for a Process During Which Measurements Are Performed on Wafers 有权
    用于创建或执行在晶圆上执行测量的过程的动态采样方案的方法和系统

    公开(公告)号：US20120208301A1

    公开(公告)日：2012-08-16

    申请号：US13457383

    申请日：2012-04-26

    申请人： Pavel Izikson ,  John Robinson ,  Mike Adel ,  Amir Widmann ,  Dongsub Choi ,  Anat Marchelli

    发明人： Pavel Izikson ,  John Robinson ,  Mike Adel ,  Amir Widmann ,  Dongsub Choi ,  Anat Marchelli

    IPC分类号： H01L21/66 ,  G06F19/00

    CPC分类号： G05B21/02 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633

    摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one tot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

    摘要翻译： 提供了用于创建或执行在晶片上执行测量的过程的动态采样方案的各种方法和系统。 用于为在晶片上进行测量的过程创建动态采样方案的一种方法包括在晶片上的所有测量点处以至少一个tot对所有晶片进行测量。 该方法还包括基于测量结果确定用于该过程的动态采样方案的最佳采样方案，增强采样方案，减少采样方案和阈值。 阈值对应于最佳采样方案，增强采样方案和减少采样方案将用于该过程的测量值。

    DEVICE CORRELATED METROLOGY (DCM) FOR OVL WITH EMBEDDED SEM STRUCTURE OVERLAY TARGETS
    5.
    发明申请
    DEVICE CORRELATED METROLOGY (DCM) FOR OVL WITH EMBEDDED SEM STRUCTURE OVERLAY TARGETS 有权
    具有嵌入式扫描电镜结构覆盖目标的OVL的器件相关公制（DCM）

    公开(公告)号：US20140065736A1

    公开(公告)日：2014-03-06

    申请号：US13776550

    申请日：2013-02-25

    申请人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    发明人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    IPC分类号： H01L23/544

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本公开的方面描述了用于测量设备的两个基本上共面的层之间的相对位置的目标。 目标包括第一层和第二层中的周期性结构。 可以测量第一和第二周期结构之间的第一和第二层的相对位置与相应的器件状结构之间的差异，以校正第一和第二周期结构之间的第一和第二层的相对位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    METHOD AND SYSTEM FOR DETECTING AND CORRECTING PROBLEMATIC ADVANCED PROCESS CONTROL PARAMETERS
    6.
    发明申请
    METHOD AND SYSTEM FOR DETECTING AND CORRECTING PROBLEMATIC ADVANCED PROCESS CONTROL PARAMETERS 审中-公开
    用于检测和校正问题的高级过程控制参数的方法和系统

    公开(公告)号：US20130060354A1

    公开(公告)日：2013-03-07

    申请号：US13597944

    申请日：2012-08-29

    申请人： Dongsub Choi ,  David Tien

    发明人： Dongsub Choi ,  David Tien

    IPC分类号： G05B13/02

    CPC分类号： G05B19/41875 ,  G05B13/04 ,  G05B2219/32018 ,  G05B2219/32191 ,  G05B2219/42001 ,  G05B2219/45031 ,  Y02P90/22

    摘要： The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.

    摘要翻译： 本发明可以体现在用于在诸如集成电路制造工艺的制造过程中监视和控制反馈控制的系统和方法中。 过程控制参数可以包括通过在硅晶片上操作的光刻扫描器或步进器施加的平移，旋转，放大，剂量和聚焦。 叠加误差用于计算反馈控制过程中使用的测量参数。 对统计参数进行计算，归一化和绘制在一组共同的轴上，以便一目了然地比较测量参数和过程控制参数，以便于检测有问题的参数。 参数趋势和上下文放松场景也进行了图形比较。 可以确定反馈控制参数，例如EWMA羊皮纸，并将其用作反馈参数，以便根据测量参数来计算对过程控制参数进行调整的APC模型。

    METHODS AND SYSTEMS FOR CREATING OR PERFORMING A DYNAMIC SAMPLING SCHEME FOR A PROCESS DURING WHICH MEASUREMENTS ARE PERFORMED ON WAFERS
    7.
    发明申请
    METHODS AND SYSTEMS FOR CREATING OR PERFORMING A DYNAMIC SAMPLING SCHEME FOR A PROCESS DURING WHICH MEASUREMENTS ARE PERFORMED ON WAFERS 有权
    用于创建或执行测量过程中的过程的动态采样方案的方法和系统

    公开(公告)号：US20080286885A1

    公开(公告)日：2008-11-20

    申请号：US12107346

    申请日：2008-04-22

    申请人： Pavel Izikson ,  John Robinson ,  Mike Adel ,  Amir Widmann ,  Dongsub Choi ,  Anat Marchelli

    发明人： Pavel Izikson ,  John Robinson ,  Mike Adel ,  Amir Widmann ,  Dongsub Choi ,  Anat Marchelli

    IPC分类号： G06F19/00 ,  H01L21/66

    CPC分类号： G05B21/02 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633

    摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

    摘要翻译： 提供了用于创建或执行在晶片上执行测量的过程的动态采样方案的各种方法和系统。 用于为在晶片上进行测量的过程创建动态采样方案的一种方法包括在晶片上的所有测量点处对至少一批中的所有晶片执行测量。 该方法还包括基于测量结果确定用于该过程的动态采样方案的最佳采样方案，增强采样方案，减少采样方案和阈值。 阈值对应于最佳采样方案，增强采样方案和减少采样方案将用于该过程的测量值。

    OVERLAY TARGET GEOMETRY FOR MEASURING MULTIPLE PITCHES
    8.
    发明申请
    OVERLAY TARGET GEOMETRY FOR MEASURING MULTIPLE PITCHES 有权
    用于测量多个孔的覆盖目标几何

    公开(公告)号：US20130107259A1

    公开(公告)日：2013-05-02

    申请号：US13446133

    申请日：2012-04-13

    申请人： Dongsub Choi ,  David Tien

    发明人： Dongsub Choi ,  David Tien

    IPC分类号： G01B11/00 ,  H01L23/544

    CPC分类号： G03F7/70683 ,  G03F7/70633

    摘要： An overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to provide metrology information pertaining to different pitches, different coverage ratios, and linearity. Pattern elements may be separated from adjacent pattern elements by non-uniform distance; pattern elements may have non-uniform width; or pattern elements may be designed to demonstrate a specific offset as compared to pattern elements in a different layer.

    摘要翻译： 公开了一种用于基于成像的计量学的覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为提供关于不同间距，不同覆盖率和线性的度量信息 。 图案元素可以通过不均匀的距离与相邻图案元素分离; 图案元素可能具有不均匀的宽度; 或者图案元素可被设计为与不同层中的图案元素相比显示特定的偏移。

    Method and system for detecting and correcting problematic advanced process control parameters
    10.
    发明授权
    Method and system for detecting and correcting problematic advanced process control parameters 有权

    公开(公告)号：US10295993B2

    公开(公告)日：2019-05-21

    申请号：US13597944

    申请日：2012-08-29

    申请人： Dongsub Choi ,  David Tien

    发明人： Dongsub Choi ,  David Tien

    IPC分类号： G05B13/02 ,  G05B19/418 ,  G05B13/04

    摘要： The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.