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    Waveguide photo-detector
    1.
    发明授权
    Waveguide photo-detector 有权
    波导光电探测器

    公开(公告)号：US08823121B2

    公开(公告)日：2014-09-02

    申请号：US13550364

    申请日：2012-07-16

    Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    IPC: H01L31/00 ,  G02B6/12 ,  H01L31/0352 ,  G02B6/13 ,  G02B6/136

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

    Waveguide photo-detector
    2.
    发明授权
    Waveguide photo-detector 有权
    波导光电探测器

    公开(公告)号：US08242571B2

    公开(公告)日：2012-08-14

    申请号：US12763990

    申请日：2010-04-20

    Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    IPC: H01L31/0232 ,  G02B6/42

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

    WAVEGUIDE PHOTO-DETECTOR
    3.
    发明申请
    WAVEGUIDE PHOTO-DETECTOR 有权
    波形检测器

    公开(公告)号：US20110049660A1

    公开(公告)日：2011-03-03

    申请号：US12763990

    申请日：2010-04-20

    Applicant: Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    Inventor： Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    IPC: H01L31/0232

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

    PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    相片检测器及其制造方法

    公开(公告)号：US20110133187A1

    公开(公告)日：2011-06-09

    申请号：US12765705

    申请日：2010-04-22

    Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

    Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

    IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

    CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

    Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

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