公开(公告)号：US06822776B2

公开(公告)日：2004-11-23

申请号：US10308137

申请日：2002-12-03

申请人： Doo-Young Hah ,  Ho-Jun Ryu ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn Tae Kim

发明人： Doo-Young Hah ,  Ho-Jun Ryu ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn Tae Kim

IPC分类号： G02B2608

CPC分类号： G02B6/3518 ,  G02B6/3556 ,  G02B6/357 ,  G02B6/3584 ,  G02B26/0841 ,  Y10S359/90

摘要： The present invention relates to a scanning micromirror for optical communications. The scanning micromirror comprises an outer frame having an aperture therein, an inner frame located within the aperture of the outer frame and having an aperture therein, an optical reflecting means located within the aperture of the inner frame, a plurality of first torsion springs connected between an inner wall of the outer frame and an outer wall of the inner frame, for supporting the inner frame, a plurality of second torsion springs connected between the inner wall of the inner frame and the optical reflecting means, for supporting the optical reflecting means, first comb-type electrostatic actuators for applying electrostatic torque by which the inner frame is rotated about an axis of the first torsion springs, and second comb-type electrostatic actuators for applying electrostatic torque by which the optical reflecting means is rotated about an axis of the second torsion springs. Therefore, as the present invention uses vertical comb-type electrostatic actuators, an available rotation angle can be made large compared to a conventional case using a parallel-plate type electrostatic actuator. As the vertical asymmetry of the fixed combs and the movable combs are large, a large rotation angle can be obtained in non-resonant mode as well as resonant mode.

公开(公告)号：US06806205B2

公开(公告)日：2004-10-19

申请号：US09753065

申请日：2000-12-29

申请人： Won-Ick Jang ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn-Tae Kim ,  Myung-Lae Lee

发明人： Won-Ick Jang ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn-Tae Kim ,  Myung-Lae Lee

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  H01L21/31111 ,  H01L21/31116

摘要： Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.

摘要翻译： 公开了一种通过表面微机械加工制造MEMS器件的方法，而不通过蚀刻作为衬底和微结构之间的中间层的牺牲层的氧化硅而不留下任何残留物，而不是通过蚀刻半导体的氧化硅 设备。 根据本发明的方法包括以下步骤：提供用无水HF鼓泡的醇蒸汽，保持供料装置的温度和无水HF和醇的移动路径高于醇的沸点，进行蒸汽 通过控制温度和压力在水的相平衡图的蒸汽区域内进行蚀刻，并且在微结构的下部去除牺牲层的氧化硅。

公开(公告)号：US06531417B2

公开(公告)日：2003-03-11

申请号：US09834586

申请日：2001-04-12

申请人： Chang-Auck Choi ,  Won-Ick Jang ,  Chi-Hoon Jun ,  Yun-Tae Kim

发明人： Chang-Auck Choi ,  Won-Ick Jang ,  Chi-Hoon Jun ,  Yun-Tae Kim

IPC分类号： H01L2100

CPC分类号： F04B53/1077 ,  F04B19/24 ,  F04B43/043

摘要： The present invention relates to a micro electro mechanical system (MEMS); and, more particularly, to a micro pump used in micro fluid transportation and control and a method for fabricating the same. The micro pump according to the present invention comprises: trenches formed in a silicon substrate in order to form a pumping region including a main pumping region and an auxiliary pumping region; channels formed on both sides of the pumping region; a flow prevention region having backward-flow preventing layers to resist a fluid flow; inlet/outlet regions formed at each of the channels which are disposed on both ends of the pumping region; an outer layer covering the trenches of the silicon substrate and opening portions of the inlet/outlet regions; and a thermal conducting layer formed on the outer layer and over the main pumping region so that a pressure of the fluid in the main pumping region is increased by the thermal conducting layer.

公开(公告)号：US5885898A

公开(公告)日：1999-03-23

申请号：US710517

申请日：1996-09-18

申请人： Youn-Tae Kim ,  Chi-Hoon Jun ,  Jong-Tae Baek

发明人： Youn-Tae Kim ,  Chi-Hoon Jun ,  Jong-Tae Baek

IPC分类号： H01L21/22 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76856 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

摘要： The present invention relates to a method for forming a diffusion barrier layer, the method comprising the steps of: forming an insulation membrane having an opening for exposing a diffusion region to a silicon substrate formed with the diffusion region of a predetermined conductivity; vacuum-evaporating a metal of high melting point to surface and sides of the insulation membrane and to an upper area of the diffusion region, to thereby form a metal layer; and forming on the metal layer a low resistance layer and a diffusion barrier layer according to first and second quick heating treatment steps under nitric or ammoniac atmosphere. Accordingly, the low resistance layer can be thinned out while the diffusion prevention layer can be quickly formed to thereby improve diffusion prevention characteristic and to reduce stress from an interface with the semiconductor substrate. Furthermore, the interface between the silicon substrate and the low resistance layer can be made even to thereby reduce volume change of the low resistance layer, so that junction leakage can be prevented.

摘要翻译： 本发明涉及形成扩散阻挡层的方法，该方法包括以下步骤：形成具有用于将扩散区暴露于形成有预定电导率的扩散区的硅衬底的开口的绝缘膜; 将高熔点的金属真空蒸发到绝缘膜的表面和侧面以及扩散区域的上部区域，从而形成金属层; 以及在硝酸或氨气氛下根据第一和第二快速加热处理步骤在金属层上形成低电阻层和扩散阻挡层。 因此，可以在可以快速形成扩散防止层的同时，减小低电阻层，从而提高扩散防止特性并减少与半导体衬底的界面的应力。 此外，可以使硅衬底和低电阻层之间的界面均匀，从而减小低电阻层的体积变化，从而可以防止结漏电。

公开(公告)号：US07879629B2

公开(公告)日：2011-02-01

申请号：US11927810

申请日：2007-10-30

申请人： Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

发明人： Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

IPC分类号： H01L21/00 ,  H01L21/311

CPC分类号： B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

摘要： Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

摘要翻译： 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。

公开(公告)号：US07963147B2

公开(公告)日：2011-06-21

申请号：US11951986

申请日：2007-12-06

申请人： Chi-Hoon Jun ,  Sang-Choon Ko ,  Hyeon-Bong Pyo ,  Seon-Hee Park

发明人： Chi-Hoon Jun ,  Sang-Choon Ko ,  Hyeon-Bong Pyo ,  Seon-Hee Park

IPC分类号： G01N7/00 ,  G01N27/12

CPC分类号： G01N27/128

摘要： Provided are a micro gas sensor for measuring a gas concentration configured to achieve a high heating and cooling rate of a gas sensitive layer, achieve temperature uniformity, and achieve durability against thermal impact and mechanical impact; and a method for manufacturing the micro gas sensor. The micro gas sensor includes: a vacuum cavity disposed in a substrate; a support layer covering the vacuum cavity; a sealing layer sealing the support layer and the vacuum cavity; a micro heater disposed on the sealing layer; a plurality of electrodes disposed on the micro heater, insulated from the micro heater; and a gas sensitive layer covering the electrodes.

摘要翻译： 提供一种微气体传感器，用于测量构成为实现气敏感层的高加热和冷却速度的气体浓度，实现温度均匀性，并且实现耐热冲击和机械冲击的耐久性; 以及微气体传感器的制造方法。 微气体传感器包括：设置在基板中的真空腔; 覆盖真空腔的支撑层; 密封层，密封支撑层和真空腔; 设置在密封层上的微加热器; 设置在微加热器上的多个电极，与微加热器绝缘; 以及覆盖电极的气敏层。