公开(公告)号：US20130341674A1

公开(公告)日：2013-12-26

申请号：US13529185

申请日：2012-06-21

申请人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

发明人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

IPC分类号： H01L29/739

CPC分类号： H01L29/32 ,  H01L21/26506 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.

摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一类型互补的第二导电类型的第二发射极区域，第二导电类型的漂移区域和第一电极。 第一和第二发射极区域布置在漂移区域和第一电极之间，并且每个连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区和体区。 第一导电类型的寄生区域设置在单元区域的外部，并且包括至少一个带有载流子寿命减少装置的区段。

公开(公告)号：US09214521B2

公开(公告)日：2015-12-15

申请号：US13529185

申请日：2012-06-21

申请人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

发明人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/32 ,  H01L29/861 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/167 ,  H01L21/265 ,  H01L29/40 ,  H01L29/417 ,  H01L29/10

CPC分类号： H01L29/32 ,  H01L21/26506 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.

摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一类型互补的第二导电类型的第二发射极区域，第二导电类型的漂移区域和第一电极。 第一和第二发射极区域布置在漂移区域和第一电极之间，并且每个连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区和体区。 第一导电类型的寄生区域设置在单元区域的外部，并且包括至少一个带有载流子寿命减少装置的区段。