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    Reverse Conducting IGBT
    2.
    发明申请
    Reverse Conducting IGBT 有权
    反向导通IGBT

    公开(公告)号：US20130341674A1

    公开(公告)日：2013-12-26

    申请号：US13529185

    申请日：2012-06-21

    申请人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

    发明人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

    IPC分类号： H01L29/739

    CPC分类号： H01L29/32 ,  H01L21/26506 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

    摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.

    摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一类型互补的第二导电类型的第二发射极区域，第二导电类型的漂移区域和第一电极。 第一和第二发射极区域布置在漂移区域和第一电极之间，并且每个连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区和体区。 第一导电类型的寄生区域设置在单元区域的外部，并且包括至少一个带有载流子寿命减少装置的区段。

    Reverse conducting insulated gate bipolar transistor
    3.
    发明授权
    Reverse conducting insulated gate bipolar transistor 有权
    反向导通绝缘栅双极晶体管

    公开(公告)号：US09018674B2

    公开(公告)日：2015-04-28

    申请号：US13441364

    申请日：2012-04-06

    申请人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    发明人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834

    摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.

    摘要翻译： 半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。 半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。 半导体器件还包括邻近第一和第二区域的第二侧的电极。 半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。 第三区域与第二区域和第二区域隔开。

    Reverse Conducting Insulated Gate Bipolar Transistor
    4.
    发明申请
    Reverse Conducting Insulated Gate Bipolar Transistor 有权
    反向导通绝缘栅双极晶体管

    公开(公告)号：US20130264607A1

    公开(公告)日：2013-10-10

    申请号：US13441364

    申请日：2012-04-06

    申请人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    发明人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834

    摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.

    摘要翻译： 半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。 半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。 半导体器件还包括邻近第一和第二区域的第二侧的电极。 半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。 第三区域与第二区域和第二区域隔开。

    Reverse Conducting IGBT
    5.
    发明申请
    Reverse Conducting IGBT 审中-公开
    反向导通IGBT

    公开(公告)号：US20130341673A1

    公开(公告)日：2013-12-26

    申请号：US13529166

    申请日：2012-06-21

    申请人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

    发明人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

    IPC分类号： H01L29/739

    CPC分类号： H03K17/127 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397 ,  H03K3/01 ,  H03K17/66

    摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region.

    摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一导电类型互补的第二导电类型的第二发射极区域和布置在半导体本体中的第二导电类型的漂移区域。 第一和第二发射极区域布置在漂移区域和第一电极之间并且各自连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区域和身体区域。 第一导电类型的浮置寄生区域设置在单元区域的外部。

    Semiconductor device and fabrication method
    6.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08252671B2

    公开(公告)日：2012-08-28

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    IGBT device and related device having robustness under extreme conditions
    9.
    发明授权
    IGBT device and related device having robustness under extreme conditions 有权
    IGBT器件及相关器件在极端条件下具有鲁棒性

    公开(公告)号：US07696600B2

    公开(公告)日：2010-04-13

    申请号：US11713226

    申请日：2007-03-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

    IPC分类号： H01L29/10 ,  H01L29/72

    CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

    摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

    摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。