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公开(公告)号：US08029683B2
公开(公告)日：2011-10-04
申请号：US12251296
申请日：2008-10-14
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。
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公开(公告)号：US09553229B2
公开(公告)日：2017-01-24
申请号：US13220974
申请日：2011-08-30
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。
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公开(公告)号：US07455787B2
公开(公告)日：2008-11-25
申请号：US10632747
申请日：2003-08-01
IPC分类号： C23F1/00
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etcho® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-BraEtcho蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。
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公开(公告)号：US07172184B2
公开(公告)日：2007-02-06
申请号：US10912348
申请日：2004-08-04
申请人： Luca Pavani , Neil Kaminar , Pongsthorn Uralwong , Thomas Phu , Douglas H. Rose , Thomas Pass
发明人： Luca Pavani , Neil Kaminar , Pongsthorn Uralwong , Thomas Phu , Douglas H. Rose , Thomas Pass
CPC分类号： C25D17/08 , H01L21/2885 , Y10S269/90
摘要： A carrier for use in processing of a plurality of wafers or other substrates includes a support frame on which the wafers are mounted and in one embodiment at least one auxiliary frame for holding the substrates on the support frame. A plurality of clips extend from the auxiliary frame and engage the substrates in pressure engagement, and fasteners retain the auxiliary frame in position with respect to the support frame. In one embodiment two auxiliary frames can be employed for holding wafers on opposing surfaces of the support frame. The support frame has electrically non-conducting surfaces whereby the processing does not affect the support frame, and the auxiliary frame is made of electrically non-conductive material. The clips are electrically conductive and bridge current from the support frame to the wafers during plating operations. In another embodiment, auxiliary frame are not used and the wafer retention clips are mounted on the support frame. In use, the carrier can support a high number of units for processing with no significant mechanical stress being transferred to the wafers during loading and unloading from the carrier. The carriers and wafers can be transferred easily for different chemical baths and can be handled safely during rinsing and drying steps.
摘要翻译： 用于处理多个晶片或其它基板的载体包括其上安装晶片的支撑框架，并且在一个实施例中，至少一个用于将基板保持在支撑框架上的辅助框架。 多个夹子从辅助框架延伸并且以压力接合方式接合基板，并且紧固件将辅助框架相对于支撑框架保持在适当的位置。 在一个实施例中，可以使用两个辅助框架来将晶片保持在支撑框架的相对表面上。 支撑框架具有非导电表面，由此该处理不影响支撑框架，并且辅助框架由非导电材料制成。 在电镀操作期间，夹子是导电的并且桥接电流从支撑框架到晶片。 在另一个实施例中，不使用辅助框架，并且将晶片固定夹安装在支撑框架上。 在使用中，载体可以支撑大量用于加工的单元，在从载体装载和卸载期间，没有明显的机械应力转移到晶片。 载体和晶片可以容易地转移到不同的化学浴中，并且可以在漂洗和干燥步骤期间安全地处理。
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公开(公告)号：US20050061665A1
公开(公告)日：2005-03-24
申请号：US10912348
申请日：2004-08-04
申请人： Luca Pavani , Neil Kaminar , Pongsthorn Uralwong , Thomas Phu , Douglas Rose , Thomas Pass
发明人： Luca Pavani , Neil Kaminar , Pongsthorn Uralwong , Thomas Phu , Douglas Rose , Thomas Pass
IPC分类号： C25D17/06 , C25D17/08 , H01L20060101 , H01L21/288
CPC分类号： C25D17/08 , H01L21/2885 , Y10S269/90
摘要： A carrier for use in processing of a plurality of wafers or other substrates includes a support frame on which the wafers are mounted and in one embodiment at least one auxiliary frame for holding the substrates on the support frame. A plurality of clips extend from the auxiliary frame and engage the substrates in pressure engagement, and fasteners retain the auxiliary frame in position with respect to the support frame. In one embodiment two auxiliary frames can be employed for holding wafers on opposing surfaces of the support frame. The support frame has electrically non-conducting surfaces whereby the processing does not affect the support frame, and the auxiliary frame is made of electrically non- conductive material. The clips are electrically conductive and bridge current from the support frame to the wafers during plating operations. In another embodiment, auxiliary frame are not used and the wafer retention clips are mounted on the support frame. In use, the carrier can support a high number of units for processing with no significant mechanical stress being transferred to the wafers during loading and unloading from the carrier. The carriers and wafers can be transferred easily for different chemical baths and can be handled safely during rinsing and drying steps.
摘要翻译： 用于处理多个晶片或其它基板的载体包括其上安装晶片的支撑框架，并且在一个实施例中，至少一个用于将基板保持在支撑框架上的辅助框架。 多个夹子从辅助框架延伸并且以压力接合方式接合基板，并且紧固件将辅助框架相对于支撑框架保持在适当的位置。 在一个实施例中，可以使用两个辅助框架来将晶片保持在支撑框架的相对表面上。 支撑框架具有非导电表面，由此处理不影响支撑框架，辅助框架由非导电材料制成。 在电镀操作期间，夹子是导电的并且桥接电流从支撑框架到晶片。 在另一个实施例中，不使用辅助框架，并且将晶片固定夹安装在支撑框架上。 在使用中，载体可以支撑大量用于加工的单元，在从载体装载和卸载期间，没有明显的机械应力转移到晶片。 载体和晶片可以容易地转移到不同的化学浴中，并且可以在漂洗和干燥步骤期间安全地处理。
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公开(公告)号：US20050022861A1
公开(公告)日：2005-02-03
申请号：US10632747
申请日：2003-08-01
申请人： Douglas Rose , Pongsthorn Uralwong , David Smith
发明人： Douglas Rose , Pongsthorn Uralwong , David Smith
IPC分类号： H01L20060101 , H01L31/00 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etcho® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-BraEtcho蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。
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