公开(公告)号：US08029683B2

公开(公告)日：2011-10-04

申请号：US12251296

申请日：2008-10-14

申请人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

发明人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

IPC分类号： B29D11/00 ,  B44C1/22

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/18

摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

公开(公告)号：US09553229B2

公开(公告)日：2017-01-24

申请号：US13220974

申请日：2011-08-30

申请人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

发明人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

IPC分类号： H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/18

摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

公开(公告)号：US07455787B2

公开(公告)日：2008-11-25

申请号：US10632747

申请日：2003-08-01

申请人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

发明人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

IPC分类号： C23F1/00

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/18

摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etcho® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-BraEtcho蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

公开(公告)号：US20090260673A1

公开(公告)日：2009-10-22

申请号：US12477796

申请日：2009-06-03

申请人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H01L31/042

CPC分类号： H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

摘要翻译： 在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。 导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。 也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

公开(公告)号：US07554031B2

公开(公告)日：2009-06-30

申请号：US11210213

申请日：2005-08-22

申请人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H01L31/00

CPC分类号： H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

摘要翻译： 在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。 导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。 也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

公开(公告)号：US09035167B2

公开(公告)日：2015-05-19

申请号：US12845627

申请日：2010-07-28

申请人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H01L31/0224 ,  H01L31/048 ,  H01L31/0216

CPC分类号： H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

公开(公告)号：US07786375B2

公开(公告)日：2010-08-31

申请号：US12477796

申请日：2009-06-03

申请人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H03H5/10 ,  H01L31/00

CPC分类号： H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

摘要翻译： 在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。 导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。 也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

公开(公告)号：US20170288074A1

公开(公告)日：2017-10-05

申请号：US15334706

申请日：2016-10-26

申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US20170222068A1

公开(公告)日：2017-08-03

申请号：US15485840

申请日：2017-04-12

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/0475 ,  H01L31/028 ,  H01L31/05

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20160284923A1

公开(公告)日：2016-09-29

申请号：US14866239

申请日：2015-09-25

申请人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

摘要翻译： 本文描述了制造太阳能电池的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。 该方法还涉及在薄介电层上形成硅层。 该方法还涉及从硅层形成多个发射极区域。