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    Apparatus and Method for Controlling Plasma Potential
    2.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20110024046A1

    公开(公告)日：2011-02-03

    申请号：US12905046

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.

    摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 下电极也被限定为支持暴露于等离子体的半导体晶片。 上电极设置在下电极的上方并与之隔开的关系。 上电极由掺杂的半导体材料限定。 上电极内的掺杂浓度从上电极的中心向周边径向变化。 上电极的电位影响室内等离子体的电位。

    Apparatus and Method for Controlling Plasma Potential
    3.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20080006205A1

    公开(公告)日：2008-01-10

    申请号：US11456545

    申请日：2006-07-10

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

    摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

    Apparatus and method for controlling plasma potential
    4.
    发明授权
    Apparatus and method for controlling plasma potential 有权
    用于控制等离子体电位的装置和方法

    公开(公告)号：US09111724B2

    公开(公告)日：2015-08-18

    申请号：US12905041

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01J7/24 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

    摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。

    Apparatus and Method for Controlling Plasma Potential
    5.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20110024045A1

    公开(公告)日：2011-02-03

    申请号：US12905041

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

    摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。

    Plasma processor in plasma confinement region within a vacuum chamber
    9.
    发明授权
    Plasma processor in plasma confinement region within a vacuum chamber 有权
    等离子体处理器在真空室内的等离子体约束区域

    公开(公告)号：US06984288B2

    公开(公告)日：2006-01-10

    申请号：US10032279

    申请日：2001-12-31

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01J37/32522 ,  H01J37/32082 ,  Y10S156/916

    摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

    摘要翻译： 用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。 该室包括在参考电位的壁和与壁间隔开的等离子体约束区域。 连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到 流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。

    Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
    10.
    发明授权
    Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same 有权
    具有介电材料和/或空腔的静电吸盘组件具有变化的厚度，型材和/或形状，使用方法和结合其的装置

    公开(公告)号：US08000082B2

    公开(公告)日：2011-08-16

    申请号：US12405906

    申请日：2009-03-17

    申请人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

    发明人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

    IPC分类号： H01L21/683 ,  H01T23/60

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

    摘要翻译： 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔位于静电卡盘陶瓷层的座面上。 可以可选地将嵌入式极图案并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。