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    Apparatus and Method for Controlling Plasma Potential
    2.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20080006205A1

    公开(公告)日：2008-01-10

    申请号：US11456545

    申请日：2006-07-10

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

    摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

    Apparatus and Method for Controlling Plasma Potential
    3.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20110024046A1

    公开(公告)日：2011-02-03

    申请号：US12905046

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.

    摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 下电极也被限定为支持暴露于等离子体的半导体晶片。 上电极设置在下电极的上方并与之隔开的关系。 上电极由掺杂的半导体材料限定。 上电极内的掺杂浓度从上电极的中心向周边径向变化。 上电极的电位影响室内等离子体的电位。

    Apparatus and method for controlling plasma potential
    4.
    发明授权
    Apparatus and method for controlling plasma potential 有权
    用于控制等离子体电位的装置和方法

    公开(公告)号：US09111724B2

    公开(公告)日：2015-08-18

    申请号：US12905041

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01J7/24 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

    摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。

    Apparatus and Method for Controlling Plasma Potential
    5.
    发明申请
    Apparatus and Method for Controlling Plasma Potential 审中-公开
    用于控制等离子体电位的装置和方法

    公开(公告)号：US20110024045A1

    公开(公告)日：2011-02-03

    申请号：US12905041

    申请日：2010-10-14

    申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

    摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。

    Gas distribution system having fast gas switching capabilities
    9.
    发明申请
    Gas distribution system having fast gas switching capabilities 有权
    气体分配系统具有快速的气体切换能力

    公开(公告)号：US20050241763A1

    公开(公告)日：2005-11-03

    申请号：US10835175

    申请日：2004-04-30

    申请人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

    发明人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

    IPC分类号： H01L21/306

    CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

    摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

    摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

    Plasma processor in plasma confinement region within a vacuum chamber
    10.
    发明授权
    Plasma processor in plasma confinement region within a vacuum chamber 有权
    等离子体处理器在真空室内的等离子体约束区域

    公开(公告)号：US06984288B2

    公开(公告)日：2006-01-10

    申请号：US10032279

    申请日：2001-12-31

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01J37/32522 ,  H01J37/32082 ,  Y10S156/916

    摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

    摘要翻译： 用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。 该室包括在参考电位的壁和与壁间隔开的等离子体约束区域。 连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到 流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。