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公开(公告)号：US20120189780A1
公开(公告)日：2012-07-26
申请号：US13429903
申请日：2012-03-26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm.
摘要翻译： 描述了在基板上制造图案化表面的方法。 通常，图案化表面由厚度小于约5nm的残余层限定。
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公开(公告)号：US20090148619A1
公开(公告)日：2009-06-11
申请号：US12328498
申请日：2008-12-04
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm.
摘要翻译： 描述了在基板上制造图案化表面的方法。 通常，图案化表面由厚度小于约5nm的残余层限定。
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公开(公告)号：US08545709B2
公开(公告)日：2013-10-01
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US20090200710A1
公开(公告)日：2009-08-13
申请号：US12367079
申请日：2009-02-06
申请人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
发明人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/2022
摘要： Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.
摘要翻译： 位于能量源和压印光刻模板之间的装置可以阻挡能量暴露于分配在基底上的可聚合材料的部分。 被能量阻挡的可聚合材料的一部分可以保持流体，而剩余的可聚合材料固化。
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公开(公告)号：US20120187085A1
公开(公告)日：2012-07-26
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US08641958B2
公开(公告)日：2014-02-04
申请号：US13743772
申请日：2013-01-17
申请人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
发明人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/2022
摘要： Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.
摘要翻译： 位于能量源和压印光刻模板之间的装置可以阻挡能量暴露于分配在基底上的可聚合材料的部分。 被能量阻挡的可聚合材料的一部分可以保持流体，而剩余的可聚合材料固化。
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公开(公告)号：US08361371B2
公开(公告)日：2013-01-29
申请号：US12367079
申请日：2009-02-06
申请人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
发明人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/2022
摘要： Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.
摘要翻译： 位于能量源和压印光刻模板之间的装置可以阻挡能量暴露于分配在基底上的可聚合材料的部分。 被能量阻挡的可聚合材料的一部分可以保持流体，而剩余的可聚合材料固化。
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公开(公告)号：US20130241109A1
公开(公告)日：2013-09-19
申请号：US13743772
申请日：2013-01-17
申请人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
发明人： Niyaz Khusnatdinov , Christopher Ellis Jones , Joseph G. Perez , Dwayne L. LaBrake , Ian Matthew McMackin
IPC分类号： B29C59/02
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/2022
摘要： Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.
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公开(公告)号：US20090212012A1
公开(公告)日：2009-08-27
申请号：US12392685
申请日：2009-02-25
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US08891080B2
公开(公告)日：2014-11-18
申请号：US13178268
申请日：2011-07-07
IPC分类号： G01N21/00 , G01N21/956 , G01N21/94 , G01N21/47
CPC分类号： G01N21/94 , G01N21/00 , G01N21/47 , G01N21/956 , Y10S977/887
摘要： Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described.
摘要翻译： 周期性重复的纳米种类的检测指示底物污染的水平，并且有助于减少底物上的污染物。 描述了用于检测纳米空间的系统和方法，以及用于清洁和/或维持基板清洁的系统和方法。
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