公开(公告)号：US10784179B2

公开(公告)日：2020-09-22

申请号：US16839964

申请日：2020-04-03

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok Lee ,  Zin-Sig Kim ,  Sung-Bum Bae

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065 ,  H01L29/778 ,  H01L29/20 ,  H01L23/373

Abstract: A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.

公开(公告)号：US10651107B2

公开(公告)日：2020-05-12

申请号：US16134286

申请日：2018-09-18

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok Lee ,  Zin-Sig Kim ,  Sung-Bum Bae

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/538 ,  H01L23/00 ,  H01L23/373 ,  H01L29/20 ,  H01L29/778

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.

公开(公告)号：US09755027B2

公开(公告)日：2017-09-05

申请号：US15265647

申请日：2016-09-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok Lee ,  Ki Hwan Kim ,  Sang Choon Ko ,  Zin-Sig Kim ,  Jeho Na ,  Eun Soo Nam ,  Young Rak Park ,  Junbo Park ,  Chi hoon Jun ,  Dong Yun Jung

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/778 ,  H01L29/423 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.