公开(公告)号：US11978622B2

公开(公告)日：2024-05-07

申请号：US15324588

申请日：2015-06-24

申请人： Entegris, Inc.

发明人： Lingyan Song ,  Steven Lippy ,  Emanuel I. Cooper

IPC分类号： H01L21/02 ,  B08B3/08 ,  C11D1/00 ,  C11D1/66 ,  C11D3/04 ,  C11D3/24 ,  C11D3/30 ,  C11D3/36 ,  C11D3/37 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/00

CPC分类号： H01L21/02068 ,  B08B3/08 ,  C11D1/008 ,  C11D1/667 ,  C11D3/042 ,  C11D3/046 ,  C11D3/245 ,  C11D3/30 ,  C11D3/361 ,  C11D3/3707 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/0047 ,  H01L21/02063

摘要： Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：US10472567B2

公开(公告)日：2019-11-12

申请号：US14772652

申请日：2014-03-04

申请人： Entegris, Inc.

发明人： Li-Min Chen ,  Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song ,  Chia-Jung Hsu ,  Sheng-Hung Tu ,  Chieh Ju Wang

IPC分类号： C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  C09K13/08 ,  C09K13/10 ,  G03F7/42

摘要： Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US10460954B2

公开(公告)日：2019-10-29

申请号：US15316358

申请日：2015-06-02

申请人： ENTEGRIS, INC.

发明人： Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song

IPC分类号： C23F1/10 ,  H01L21/311 ,  C23F1/26 ,  H01L21/02 ,  C09K13/08 ,  C09K13/10 ,  C11D7/08 ,  C11D7/14 ,  C11D7/22 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D7/36 ,  C11D7/50 ,  C11D11/00 ,  H01L21/027

摘要： A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.