STRIP FLOTATION FURNACE
    1.
    发明申请

    公开(公告)号:US20220162719A1

    公开(公告)日:2022-05-26

    申请号:US17433013

    申请日:2020-02-17

    摘要: A strip flotation furnace for controlling the temperature of a metal strip has a flotation nozzle bar extending through the furnace transversely to a strip running direction of the strip. The flotation nozzle bar has two opposing first flotation nozzle rows spaced apart by a central region of the flotation nozzle bar. The rows are set up so that corresponding flotation nozzle jets, with a directional component toward the central region, can be generated to provide pressure cushioning for metal strip guiding. A temperature-control nozzle bar extends transversely to and is spaced apart from the flotation nozzle bar along the strip running direction. The temperature-control nozzle bar has two additional opposing temperature-control nozzle rows spaced apart by an additional temperature-control nozzle bar central region. These rows are set up so that corresponding temperature-control nozzle jets, with a directional component opposite to the additional central region, can be generated.

    APPARATUS FOR GROWING CRYSTALS, HAVING A THERMAL CASING UNIT

    公开(公告)号:US20230332331A1

    公开(公告)日:2023-10-19

    申请号:US18028678

    申请日:2021-09-23

    IPC分类号: C30B35/00

    CPC分类号: C30B35/002 C30B35/007

    摘要: A device for growing crystals, includes a crucible and an enveloping unit surrounding it for the thermal insulation of the crucible The enveloping unit is held on the crucible in its position relative thereto by a holding unit The holding unit includes at least one holding element designed to be oblong and preferably non-rigid, having a first and second end section The holding element surrounds the enveloping unit circumferentially on the side facing away from the crucible and contacts it. The two end sections are coupled to one another, wherein a holding force acting on the enveloping unit in the radial direction is applied by the holding element

    DEVICE FOR GROWING SINGLE CRYSTALS, IN PARTICULAR SINGLE CRYSTALS OF SILICON CARBIDE

    公开(公告)号:US20230332330A1

    公开(公告)日:2023-10-19

    申请号:US18028674

    申请日:2021-09-23

    IPC分类号: C30B35/00 C30B29/36

    CPC分类号: C30B35/002 C30B29/36

    摘要: A device for growing single crystals, in particular single crystals of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the crystals, wherein the device hast at least one seed crystal layer wherein the crucible is arranged in a chamber, in particular made of a glass material, for example quartz glass, wherein an induction heater is arranged around the chamber. The crucible is designed to have multiple parts and includes a crucible bottom section, at least one crucible wall part, and a crucible cover part, which are releasably connected to one another.

    TEMPERATURE-CONTROL UNIT FOR A FURNACE DEVICE FOR HEAT TREATING A PLATE

    公开(公告)号:US20200370833A1

    公开(公告)日:2020-11-26

    申请号:US16767101

    申请日:2018-11-29

    摘要: The present invention relates to a temperature-control unit for a furnace device for heat treating a plate, in particular a metal plate. The temperature-control unit has a temperature-control body, which is arrangeable in a furnace chamber of the furnace device. The temperature-control body has a plurality of receiving bores. Furthermore, the temperature-control unit has a plurality of temperature-control pins, wherein the temperature-control pins are mounted in the receiving bores movably relative to the temperature-control body. The temperature-control pins are controllable in such a way that a temperature-control group of the temperature-control pins is extendable from the temperature-control body in the direction towards the plate, so that a thermal contact between the temperature-control group of the temperature-control pins and a predetermined temperature-control zone of the plate is generatable.

    METHOD FOR GROWING SINGLE CRYSTALS
    10.
    发明公开

    公开(公告)号:US20230357952A1

    公开(公告)日:2023-11-09

    申请号:US18028684

    申请日:2021-09-23

    IPC分类号: C30B23/02 C30B29/36

    CPC分类号: C30B23/02 C30B29/36

    摘要: A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.