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公开(公告)号：US20110263101A1
公开(公告)日：2011-10-27
申请号：US13170525
申请日：2011-06-28
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译： 在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。 可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过电介质层对两个器件区域之间的电介质层进行电偏置 碳纳米管。 碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。
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公开(公告)号：US20100295025A1
公开(公告)日：2010-11-25
申请号：US12850259
申请日：2010-08-04
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译： 在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。 可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域 碳纳米管。 碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。
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公开(公告)号：US07659579B2
公开(公告)日：2010-02-09
申请号：US11539288
申请日：2006-10-06
IPC分类号： H01L29/78
CPC分类号： H01L29/78612 , H01L29/66772 , H01L29/78621 , H01L29/78648
摘要： A FET has a shallow source/drain region, a deep channel region, a gate stack and a back gate that is surrounded by dielectric. The FET structure also includes halo or pocket implants that extend through the entire depth of the channel region. Because a portion of the halo and well doping of the channel is deeper than the source/drain depth, better threshold voltage and process control is achieved. A back-gated FET structure is also provided having a first dielectric layer in this structure that runs under the shallow source/drain region between the channel region and the back gate. This first dielectric layer extends from under the source/drain regions on either side of the back gate and is in contact with a second dielectric such that the back gate is bounded on each side or isolated by dielectric.
摘要翻译： FET具有浅电源/漏极区域，深沟道区域，栅极堆叠和被电介质包围的背栅极。 FET结构还包括延伸通过通道区域的整个深度的晕或凹坑植入物。 因为沟道的一部分光晕和阱掺杂比源极/漏极深度更深，所以实现了更好的阈值电压和过程控制。 还提供了后栅化FET结构，其具有在该结构中的第一介电层，其在沟道区域和后栅极之间的浅源极/漏极区域下方延伸。 该第一电介质层从背栅的两侧的源极/漏极区下方延伸并与第二电介质接触，使得后栅极在每一侧上界定或通过电介质隔离。
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公开(公告)号：US20080169507A1
公开(公告)日：2008-07-17
申请号：US12053658
申请日：2008-03-24
CPC分类号： H01L29/8605 , H01L27/016 , H01L27/0802 , H01L29/66166
摘要： A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed along the sidewalls of the trench and, where multiple trenches form pillars, in the pillars between the trenches by doping the sidewalls with an angled implant. Resistor contacts are formed to the buried well at opposite ends of the trenches and pillars, if any.
摘要翻译： 半导体电阻器，制造电阻器的方法和制造包括电阻器的IC的方法。 掩埋阱形成在绝缘体上硅（SOI）晶片的硅衬底中。 在埋井中形成至少一个沟槽。 电阻器沿着沟槽的侧壁形成，并且在多个沟槽形成支柱的情况下，通过用成角度的植入物掺杂侧壁，在沟槽之间的支柱中形成电阻器。 如果有的话，在沟槽和支柱的相对两端形成电阻触点到掩埋井。
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公开(公告)号：US20090179193A1
公开(公告)日：2009-07-16
申请号：US11972669
申请日：2008-01-11
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译： 在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。 可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域 碳纳米管。 碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。
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公开(公告)号：US07538391B2
公开(公告)日：2009-05-26
申请号：US11621228
申请日：2007-01-09
申请人： Dureseti Chidambarrao , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik , Jeffrey W. Sleight , Richard Q. Williams
发明人： Dureseti Chidambarrao , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik , Jeffrey W. Sleight , Richard Q. Williams
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/785 , H01L29/0649 , H01L29/66795 , H01L29/7843
摘要： A method of forming a transistor patterns a semiconductor fin on a substrate, such that the fin extends from the substrate. Then, the method forms a gate conductor over a central portion of the fin, leaving end portions of the fin exposed. Next, the end portions of the fin are doped with at least one impurity to leave the central portion of the fin as a semiconductor and form the end portions of the fin as conductors. The end portions of the fin are undercut to disconnect the end portions of the fin from the substrate, such that the fin is connected to the substrate along a central portion and is disconnected from the substrate along the end portions and that the end portions are free to move and the central portion is not free to move. A straining layer is formed on a first side of the fin and the straining layer imparts physical pressure on the fin such that the end portions are permanently moved away from a straight-line orientation with the central portion after the forming of the straining layer. Thus, the undercutting in combination with the forming of the straining layer curves the fin such that, when viewed from a top of the substrate, the fin is bowed and has a curved shape.
摘要翻译： 一种形成晶体管的方法在衬底上形成半导体鳍片，使得鳍片从衬底延伸。 然后，该方法在鳍片的中心部分上形成栅极导体，使翅片的端部部分露出。 接下来，翅片的端部掺杂有至少一种杂质，以使翅片的中心部分作为半导体，并将翅片的端部形成为导体。 翅片的端部被底切以使翅片的端部与基板断开，使得翅片沿着中心部分连接到基板，并且沿着端部与基板断开，并且端部部分是自由的 移动，中央部分不能自由移动。 在翅片的第一侧上形成有应变层，并且应变层在翅片上施加物理压力，使得端部在紧固层形成之后永久地与中心部分的直线取向远离。 因此，与形成应变层相结合的底切使翅片弯曲，使得当从基板的顶部观察时，翅片弯曲并具有弯曲形状。
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公开(公告)号：US07462916B2
公开(公告)日：2008-12-09
申请号：US11458461
申请日：2006-07-19
申请人： Richard Q. Williams , Dureseti Chidambarrao , John J. Ellis-Monaghan , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik
发明人： Richard Q. Williams , Dureseti Chidambarrao , John J. Ellis-Monaghan , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik
IPC分类号： H01L29/76
CPC分类号： H01L29/78 , H01L21/7624 , H01L21/823807 , H01L29/66795 , H01L29/7846 , H01L29/7848 , H01L29/785
摘要： A FET structure is provided in which at least one stressor element provided at or near one corner of an active semiconductor region applies a stress in a first direction to one side of a channel region of the FET to apply a torsional stress to the channel region of the FET. In a particular embodiment, a second stressor element is provided at or near an opposite corner of the active semiconductor region to apply a stress in a second direction to an opposite side of a channel region of the FET, the second direction being opposite to the first direction. In this way, the first and second stressor elements cooperate together in applying a torsional stress to the channel region of the FET.
摘要翻译： 提供了一种FET结构，其中设置在有源半导体区域的一个角附近或附近的至少一个应激元件将第一方向上的应力施加到FET的沟道区域的一侧，以向该沟道区域的沟道区域施加扭转应力 FET。 在特定实施例中，第二应力元件设置在有源半导体区域的相对拐角处或附近，以将第二方向上的应力施加到FET的沟道区域的相对侧，第二方向与第一方向相反 方向。 以这种方式，第一和第二应激元件协同工作，将扭曲应力施加到FET的沟道区域。
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公开(公告)号：US20080153278A1
公开(公告)日：2008-06-26
申请号：US12043226
申请日：2008-03-06
IPC分类号： H01L21/84
CPC分类号： H01L27/10 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a strip. Before or after the patterning, the single crystal silicon layer is doped with one or more impurities. At least an upper portion of the single crystal silicon layer is then silicided to form a silicided strip. In one embodiment the entire single crystal silicon strip is silicided to create a silicide strip. Second insulator(s) is/are formed on the silicide strip, so as to isolate the silicided strip from surrounding structures. Before or after forming the second insulators, the method forms electrical contacts through the second insulators to ends of the silicided strip. By utilizing a single crystal silicon strip, any form of semiconductor, such as a diode, conductor, insulator, transistor, etc. can form the underlying portion of the fuse structure. The overlying silicide material allows the fuse to act as a conductor in its unprogrammed state. However, contrary to metal or polysilicon based eFuses which only comprise an insulator in the programmed state, when the inventive eFuse is programmed (and the silicide is moved or broken) the underlying semiconductor structure operates as an active semiconductor device.
摘要翻译： eFuse从在第一绝缘体层上具有单晶硅层的单晶硅绝缘体（SOI）结构开始。 将单晶硅层图案化成条带。 在构图之前或之后，单晶硅层掺杂有一种或多种杂质。 至少单晶硅层的上部然后被硅化以形成硅化带。 在一个实施例中，整个单晶硅带被硅化以产生硅化物条。 在硅化物条上形成第二绝缘体，从而将硅化物带与周围结构隔离。 在形成第二绝缘体之前或之后，该方法通过第二绝缘体形成与硅化带的端部的电接触。 通过使用单晶硅条，任何形式的半导体，例如二极管，导体，绝缘体，晶体管等都可以形成熔丝结构的下面部分。 上覆的硅化物材料允许熔丝作为未编程状态的导体。 然而，与仅编程状态的仅包含绝缘体的金属或多晶硅基eFuse相反，当本发明的eFuse被编程（并且硅化物被移动或断开）时，下面的半导体结构作为有源半导体器件工作。
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公开(公告)号：US07382036B2
公开(公告)日：2008-06-03
申请号：US11161320
申请日：2005-07-29
IPC分类号： H01L27/148
CPC分类号： H01L27/10 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a strip. Before or after the patterning, the single crystal silicon layer is doped with one or more impurities. At least an upper portion of the single crystal silicon layer is then silicided to form a silicided strip. In one embodiment the entire single crystal silicon strip is silicided to create a silicide strip. Second insulator(s) is/are formed on the silicide strip, so as to isolate the silicided strip from surrounding structures. Before or after forming the second insulators, the method forms electrical contacts through the second insulators to ends of the silicided strip. By utilizing a single crystal silicon strip, any form of semiconductor, such as a diode, conductor, insulator, transistor, etc. can form the underlying portion of the fuse structure. The overlying silicide material allows the fuse to act as a conductor in its unprogrammed state. However, contrary to metal or polysilicon based eFuses which only comprise an insulator in the programmed state, when the inventive eFuse is programmed (and the silicide is moved or broken) the underlying semiconductor structure operates as an active semiconductor device.
摘要翻译： eFuse从在第一绝缘体层上具有单晶硅层的单晶硅绝缘体（SOI）结构开始。 将单晶硅层图案化成条带。 在构图之前或之后，单晶硅层掺杂有一种或多种杂质。 至少单晶硅层的上部然后被硅化以形成硅化带。 在一个实施例中，整个单晶硅带被硅化以产生硅化物条。 在硅化物条上形成第二绝缘体，从而将硅化物带与周围结构隔离。 在形成第二绝缘体之前或之后，该方法通过第二绝缘体形成与硅化带的端部的电接触。 通过使用单晶硅条，任何形式的半导体，例如二极管，导体，绝缘体，晶体管等都可以形成熔丝结构的下面部分。 上覆的硅化物材料允许熔丝作为未编程状态的导体。 然而，与仅编程状态的仅包含绝缘体的金属或多晶硅基eFuse相反，当本发明的eFuse被编程（并且硅化物被移动或断开）时，下面的半导体结构作为有源半导体器件工作。
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公开(公告)号：US07786466B2
公开(公告)日：2010-08-31
申请号：US11972669
申请日：2008-01-11
IPC分类号： H01L51/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译： 在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。 可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域 碳纳米管。 碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。
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