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公开(公告)号：US10283668B2
公开(公告)日：2019-05-07
申请号：US15229604
申请日：2016-08-05
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/075 , H01L31/0232 , H01L31/07 , H01L31/056 , H01L31/028 , H01L31/20 , H01L31/0256
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
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2.发明申请公开(公告)号：US20160343899A1
公开(公告)日：2016-11-24
申请号：US15229604
申请日：2016-08-05
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
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3.发明申请PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开具有接口带隙修改结构的光电装置及其形成方法公开(公告)号：US20140196780A1
公开(公告)日：2014-07-17
申请号：US14218410
申请日：2014-03-18
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/07 , H01L31/075 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
摘要翻译： 在p掺杂半导体层和光伏器件的透明导电材料层之间提供肖特基势垒减少层。 肖特基势垒减少层可以是具有大于透明导电材料层的功函数的功函数的导电材料层。 导电材料层可以是诸如碳纳米管层或石墨烯层的碳材料层。 或者，导电材料层可以是具有比透明导电材料层更大的功函数的另一透明导电材料层。 肖特基势垒的减小降低了透明材料层和p掺杂半导体层的接触电阻，从而降低了串联电阻并提高了光伏器件的效率。
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公开(公告)号：US10297709B2
公开(公告)日：2019-05-21
申请号：US15156940
申请日：2016-05-17
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/075 , H01L31/0232 , H01L31/07 , H01L31/056 , H01L31/028 , H01L31/20 , H01L31/0256
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
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5.发明申请PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开具有接口带隙修改结构的光电装置及其形成方法公开(公告)号：US20160260859A1
公开(公告)日：2016-09-08
申请号：US15156940
申请日：2016-05-17
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/07 , H01L31/028 , H01L31/056 , H01L31/0224
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
摘要翻译： 在p掺杂半导体层和光伏器件的透明导电材料层之间提供肖特基势垒减少层。 肖特基势垒减少层可以是具有大于透明导电材料层的功函数的功函数的导电材料层。 导电材料层可以是诸如碳纳米管层或石墨烯层的碳材料层。 或者，导电材料层可以是具有比透明导电材料层更大的功函数的另一透明导电材料层。 肖特基势垒的减小降低了透明材料层和p掺杂半导体层的接触电阻，从而降低了串联电阻并提高了光伏器件的效率。
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