公开(公告)号：US06340391B1

公开(公告)日：2002-01-22

申请号：US09622181

申请日：2000-08-14

申请人： Eiichi Iino ,  Kouji Kitagawa

发明人： Eiichi Iino ,  Kouji Kitagawa

IPC分类号： C30B1502

CPC分类号： C30B15/14 ,  C30B15/30 ,  C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A method for producing a single crystal by pulling the single crystal with a wire according to the Czochralski method, wherein temperature around an end of joint part of the wire and a seed crystal holder is controlled so as not to exceed 1200° C., preferably 800° C., at any time, and material of the wire is one selected from tungsten, stainless steel and molybdenum, and a pulling apparatus therefor. According to the present invention, there can be provided a method in which temperature around an end of joint part of a wire and a seed crystal holder is controlled so as not to exceed a temperature at which material degradation of the wire begins during the period of from seeding to an early stage of the pulling, and a pulling apparatus therefor.

摘要翻译： 通过使用Czochralski方法用线拉动单晶来制造单晶的方法，其中将线的接合部分的端部和籽晶保持器周围的温度控制为不超过1200℃，优选地 800℃，任何时候，线材的材料选自钨，不锈钢和钼，以及一种牵引装置。 根据本发明，可以提供一种方法，其中控制线的接合部分的端部周围的温度和晶种保持器的温度不超过在线材的材料劣化开始的温度 从种子到拉动的早期阶段，以及其牵引装置。

公开(公告)号：US5728211A

公开(公告)日：1998-03-17

申请号：US660198

申请日：1996-06-03

申请人： Kiyotaka Takano ,  Kouji Kitagawa ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi ,  Masahiro Sakurada

发明人： Kiyotaka Takano ,  Kouji Kitagawa ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi ,  Masahiro Sakurada

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

摘要翻译： 具有低缺陷的硅单晶，例如流动图案缺陷和激光散射断层摄影缺陷，以及氧化物中的高介电击穿强度，以及使用切克劳斯基法生产该方法的方法，包括以下步骤：调节生长晶体的第一通过时间 熔点为1200℃的第一温度范围为190分钟。 或更短，并将第二通过时间调节为1150℃至1080℃的第二温度范围，以使其为60分钟。 或更长时间。

公开(公告)号：US5938841A

公开(公告)日：1999-08-17

申请号：US754784

申请日：1996-11-21

申请人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

发明人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

IPC分类号： C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1032

摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

摘要翻译： 提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷轴和线，电动机和用于旋转坩埚的旋转轴， 插入在电机和旋转轴之间的变速装置，如果需要的话，将磁场施加到熔体上的磁场发生器。 根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US5980630A

公开(公告)日：1999-11-09

申请号：US81665

申请日：1998-05-20

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

公开(公告)号：US06423285B1

公开(公告)日：2002-07-23

申请号：US09674858

申请日：2000-11-07

申请人： Kirio Itoi ,  Eiichi Iino ,  Tohru Ishizuka ,  Tomohiko Ohta ,  Izumi Fusegawa

发明人： Kirio Itoi ,  Eiichi Iino ,  Tohru Ishizuka ,  Tomohiko Ohta ,  Izumi Fusegawa

IPC分类号： C01B3326

CPC分类号： C30B29/06 ,  C30B15/305 ,  C30B30/04 ,  Y10S117/917

摘要： In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.

摘要翻译： 在通过生长单晶锭的同时生长单晶锭的方法，同时将晶体生长轴垂直的磁场施加到包含在石英坩埚中的硅熔体中，从而将单晶从包含在石英坩埚中的熔体中拉出 ，进行晶体生长，使得坩埚中含有的硅熔体表面产生的低温区域和高温区域中的一个应该总是覆盖晶体生长的固 - 液界面，或垂直磁 将在石英坩埚中所含的硅熔体的表面的晶体中心的磁场强度的场磁场分量与水平磁场分量控制在0.3以上且0.5以下。 提供了基于施加水平磁场的CZ方法制造硅单晶的方法，其可以生长具有高生长单晶的生长方向的间隙氧浓度均匀性高的硅单晶锭 生产力和高产量。

公开(公告)号：US6159283A

公开(公告)日：2000-12-12

申请号：US267214

申请日：1999-03-12

申请人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

发明人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

IPC分类号： G01N3/02 ,  G01N3/08 ,  C30B15/24

CPC分类号： G01N3/08 ,  G01N2203/0286 ,  Y10S117/911 ,  Y10T117/1068

摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.

摘要翻译： 用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。 从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。 该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。 这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。 在提供良好的生产率和安全性平衡的条件下生长单晶锭。

公开(公告)号：US6027562A

公开(公告)日：2000-02-22

申请号：US173931

申请日：1998-10-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

公开(公告)号：US5911821A

公开(公告)日：1999-06-15

申请号：US923963

申请日：1997-09-05

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  C30B15/04

CPC分类号： C30B15/32 ,  C30B15/30 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W

摘要翻译： 公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。 机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm） 。 这使得可以安全可靠地拉出重的单晶。