公开(公告)号：US5938841A

公开(公告)日：1999-08-17

申请号：US754784

申请日：1996-11-21

申请人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

发明人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

IPC分类号： C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1032

摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

摘要翻译： 提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷轴和线，电动机和用于旋转坩埚的旋转轴， 插入在电机和旋转轴之间的变速装置，如果需要的话，将磁场施加到熔体上的磁场发生器。 根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。

公开(公告)号：US06423285B1

公开(公告)日：2002-07-23

申请号：US09674858

申请日：2000-11-07

申请人： Kirio Itoi ,  Eiichi Iino ,  Tohru Ishizuka ,  Tomohiko Ohta ,  Izumi Fusegawa

发明人： Kirio Itoi ,  Eiichi Iino ,  Tohru Ishizuka ,  Tomohiko Ohta ,  Izumi Fusegawa

IPC分类号： C01B3326

CPC分类号： C30B29/06 ,  C30B15/305 ,  C30B30/04 ,  Y10S117/917

摘要： In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.

摘要翻译： 在通过生长单晶锭的同时生长单晶锭的方法，同时将晶体生长轴垂直的磁场施加到包含在石英坩埚中的硅熔体中，从而将单晶从包含在石英坩埚中的熔体中拉出 ，进行晶体生长，使得坩埚中含有的硅熔体表面产生的低温区域和高温区域中的一个应该总是覆盖晶体生长的固 - 液界面，或垂直磁 将在石英坩埚中所含的硅熔体的表面的晶体中心的磁场强度的场磁场分量与水平磁场分量控制在0.3以上且0.5以下。 提供了基于施加水平磁场的CZ方法制造硅单晶的方法，其可以生长具有高生长单晶的生长方向的间隙氧浓度均匀性高的硅单晶锭 生产力和高产量。

公开(公告)号：US5720809A

公开(公告)日：1998-02-24

申请号：US510436

申请日：1995-08-02

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B29/06

CPC分类号： C30B15/02 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.

摘要翻译： 公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到 外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方 同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。 在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。 在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。 由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。

公开(公告)号：US5501172A

公开(公告)日：1996-03-26

申请号：US395837

申请日：1995-02-28

申请人： Toshinari Murai ,  Eiichi Iino ,  Hideo Arai ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

发明人： Toshinari Murai ,  Eiichi Iino ,  Hideo Arai ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/00

摘要： The present invention provides a method of growing silicon single crystals by the Czochralski method, wherein the strength of a neck may be increased so as to delete the risk of severance thereof in a simple and easy way without the use of mechanically complex devices and thereby growing of a single crystal of a larger diameter and heavy weight is made practically possible.The method comprises the steps of: a single crystal being so grown from a seed crystal that the diameter of said single crystal gets gradually narrower until the length of a seed taper reaches 2.5 to 15 times the sectional size of the seed crystal; the diameter of a long near-cylindrical neck following the seed taper being so regulated that said diameter may be 0.09 to 0.9 times the sectional size of the seed crystal and 2.5 mm as the smallest in diameter; the spread of the diameter fluctuation of the neck being so restricted as to be less than 1 mm; and the length of the neck being so controlled as to be kept within the range of 200 mm to 600 mm.

摘要翻译： 本发明提供了通过切克劳斯基法生长硅单晶的方法，其中可以增加颈部的强度，以便在不使用机械复杂的装置的情况下以简单和容易的方式删除其分离的风险，从而增长 的大直径和重量的单晶实际上是可能的。 该方法包括以下步骤：从晶种生长单晶，使得单晶的直径逐渐变窄，直到晶种锥的长度达到晶种的截面尺寸的2.5至15倍; 种子锥度之后的长的近圆柱形颈部的直径被调节，使得所述直径可以是晶种的截面尺寸的0.09至0.9倍，并且直径最小为2.5mm; 颈部的直径波动的扩展被限制为小于1mm; 并且颈部的长度被控制在200mm至600mm的范围内。

公开(公告)号：US5879448A

公开(公告)日：1999-03-09

申请号：US883046

申请日：1997-06-26

申请人： Masahiko Urano ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Eiichi Iino

发明人： Masahiko Urano ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Eiichi Iino

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  C30B15/32

CPC分类号： C30B15/30 ,  C30B15/22 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A method and an apparatus for pulling a single crystal are disclosed. A first neck portion, a convex portion, and a second neck portion are formed in this order under a seed crystal held by a seed chuck, and subsequent to the second neck portion, a single crystal having a diameter-expanding portion and a straight cylindrical portion is formed. Lifting holders are brought around and in proximity to the second neck portion when the second neck portion rises to a predetermined position during the pulling by the seed chuck. The single crystal and the lifting holders are moved relative to each other in the vertical direction to thereby bring the convex portion into contact with the lifting holders in a resting manner, so that part of a load borne by the seed chuck is shifted to the lifting holders. Subsequently, the pulling operation is performed by the lifting holders. Accordingly, a single crystal having a larger weight can be pulled safely while maintaining high quality.

摘要翻译： 公开了一种拉制单晶的方法和装置。 第一颈部，凸部和第二颈部依次由种子卡盘保持的晶种形成，在第二颈部之后，形成具有直径扩大部和直圆筒状的单晶 形成部分。 当通过种子卡盘拉动时，当第二颈部部分上升到预定位置时，提升架被带到第二颈部的附近并且靠近第二颈部部分。 单晶和提升架在垂直方向上彼此相对移动，从而使凸部以静止的方式与升降保持器接触，使得由种子卡盘承载的负载的一部分转移到提升 持有人 随后，拉升操作由提升保持器进行。 因此，可以在保持高质量的同时安全地拉出重量更大的单晶。

公开(公告)号：US5882397A

公开(公告)日：1999-03-16

申请号：US944869

申请日：1997-10-06

申请人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/30 ,  Y10T117/1032 ,  Y10T117/1072

摘要： In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt=Vb+Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.

摘要翻译： 在晶种牵引方法中，种子卡盘最初拉长生长的单晶，随后在牵引操作的中间通过提升夹具拉动，晶种卡盘相对于提升夹具的速度Va减小，同时上升 从牵引机构从种子卡盘切换到提升夹具的第一点开始升降夹具的速度Vb增加。 总速度Vt = Vb + Va恒定地保持在期望的牵引速度V直到第三点，其中负载从种子卡盘移动到提升夹具开始。 随后，使总速度Vt小于从起子夹头到提升夹具的负载偏移开始的第三点的期望拉速V。 这使得晶体的准确生长。

公开(公告)号：US06340391B1

公开(公告)日：2002-01-22

申请号：US09622181

申请日：2000-08-14

申请人： Eiichi Iino ,  Kouji Kitagawa

发明人： Eiichi Iino ,  Kouji Kitagawa

IPC分类号： C30B1502

CPC分类号： C30B15/14 ,  C30B15/30 ,  C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A method for producing a single crystal by pulling the single crystal with a wire according to the Czochralski method, wherein temperature around an end of joint part of the wire and a seed crystal holder is controlled so as not to exceed 1200° C., preferably 800° C., at any time, and material of the wire is one selected from tungsten, stainless steel and molybdenum, and a pulling apparatus therefor. According to the present invention, there can be provided a method in which temperature around an end of joint part of a wire and a seed crystal holder is controlled so as not to exceed a temperature at which material degradation of the wire begins during the period of from seeding to an early stage of the pulling, and a pulling apparatus therefor.

摘要翻译： 通过使用Czochralski方法用线拉动单晶来制造单晶的方法，其中将线的接合部分的端部和籽晶保持器周围的温度控制为不超过1200℃，优选地 800℃，任何时候，线材的材料选自钨，不锈钢和钼，以及一种牵引装置。 根据本发明，可以提供一种方法，其中控制线的接合部分的端部周围的温度和晶种保持器的温度不超过在线材的材料劣化开始的温度 从种子到拉动的早期阶段，以及其牵引装置。

公开(公告)号：US5728211A

公开(公告)日：1998-03-17

申请号：US660198

申请日：1996-06-03

申请人： Kiyotaka Takano ,  Kouji Kitagawa ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi ,  Masahiro Sakurada

发明人： Kiyotaka Takano ,  Kouji Kitagawa ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi ,  Masahiro Sakurada

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

摘要翻译： 具有低缺陷的硅单晶，例如流动图案缺陷和激光散射断层摄影缺陷，以及氧化物中的高介电击穿强度，以及使用切克劳斯基法生产该方法的方法，包括以下步骤：调节生长晶体的第一通过时间 熔点为1200℃的第一温度范围为190分钟。 或更短，并将第二通过时间调节为1150℃至1080℃的第二温度范围，以使其为60分钟。 或更长时间。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。