公开(公告)号：US08456010B2

公开(公告)日：2013-06-04

申请号：US13035069

申请日：2011-02-25

申请人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L23/482

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US20130126937A1

公开(公告)日：2013-05-23

申请号：US13718618

申请日：2012-12-18

申请人： EIJI MURAMOTO ,  Shinya Nunoue

发明人： EIJI MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/62

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

摘要翻译： 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

公开(公告)号：US20120007047A1

公开(公告)日：2012-01-12

申请号：US13238818

申请日：2011-09-21

申请人： Eiji MURAMOTO ,  Shinya Nunoue

发明人： Eiji MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/36 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US08610158B2

公开(公告)日：2013-12-17

申请号：US13165837

申请日：2011-06-22

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20130092898A1

公开(公告)日：2013-04-18

申请号：US13705342

申请日：2012-12-05

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

公开(公告)号：US20120056153A1

公开(公告)日：2012-03-08

申请号：US13035069

申请日：2011-02-25

申请人： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L29/20

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US08680566B2

公开(公告)日：2014-03-25

申请号：US13718618

申请日：2012-12-18

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

摘要翻译： 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

公开(公告)号：US08384109B2

公开(公告)日：2013-02-26

申请号：US13238818

申请日：2011-09-21

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20090185589A1

公开(公告)日：2009-07-23

申请号：US12408810

申请日：2009-03-23

申请人： Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

发明人： Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

IPC分类号： H01S3/10 ,  F21V9/16 ,  G02F1/35

CPC分类号： H01L33/507 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/42 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

摘要翻译： 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与​​激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。

公开(公告)号：US08648377B2

公开(公告)日：2014-02-11

申请号：US13705342

申请日：2012-12-05

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。