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公开(公告)号：US20090185589A1
公开(公告)日：2009-07-23
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译： 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。
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公开(公告)号：US07915630B2
公开(公告)日：2011-03-29
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译： 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。
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公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。
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公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。
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5.发明授权Nitride semiconductor device and nitride semiconductor layer growth substrate 有权氮化物半导体器件和氮化物半导体层生长衬底公开(公告)号：US08564006B2
公开(公告)日：2013-10-22
申请号：US13405985
申请日：2012-02-27
申请人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。
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公开(公告)号：US07773648B2
公开(公告)日：2010-08-10
申请号：US11365531
申请日：2006-03-02
申请人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
发明人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3216
摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
摘要翻译： 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。
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公开(公告)号：US07763907B2
公开(公告)日：2010-07-27
申请号：US11850404
申请日：2007-09-05
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。
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8.发明授权公开(公告)号：US07863637B2
公开(公告)日：2011-01-04
申请号：US12037358
申请日：2008-02-26
申请人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。
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9.发明授权公开(公告)号：US08004004B2
公开(公告)日：2011-08-23
申请号：US12955620
申请日：2010-11-29
申请人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
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10.发明申请公开(公告)号：US20110068360A1
公开(公告)日：2011-03-24
申请号：US12955620
申请日：2010-11-29
申请人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。
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