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    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW
    1.
    发明申请
    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW 审中-公开
    大面积光学质量合成多晶二极管窗口

    公开(公告)号：US20140349068A1

    公开(公告)日：2014-11-27

    申请号：US14362847

    申请日：2012-12-13

    Applicant: Element Six Technologies Limited

    Inventor： Paul Nicholas Inglis ,  John Robert Brandon ,  Joseph Michael Dodson ,  Timothy Peter Mollart

    IPC: G02B1/02 ,  C01B31/06

    CPC classification number: G02B1/02 ,  C01B32/25 ,  C23C16/01 ,  C23C16/274 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/56 ,  Y10T428/24355

    Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.

    Abstract translation: 包括：最大直线尺寸等于或大于70mm的多晶化学气相沉积（CVD）金刚石晶片; 厚度等于或大于1.3mm; 以及在多晶CVD金刚石晶片的至少中心区域上在室温（标称为298K）测量的以下特征中的一个或两个，所述中心区域是圆形的，以多晶CVD金刚石晶片的中心点为中心，并且具有 多晶CVD金刚石晶片的最大直线尺寸的至少70％的直径：10.6μm处的吸收系数＆lt; 0.2cm -1; 和145GHz的介电损耗系数，tanδ＆nlE; 2×10-4。

    Electrochemical cell comprising electrically conductive diamond electrodes
    5.
    发明授权
    Electrochemical cell comprising electrically conductive diamond electrodes 有权

    公开(公告)号：US11346012B2

    公开(公告)日：2022-05-31

    申请号：US16063637

    申请日：2016-11-25

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： Julian James Sargood Ellis ,  Timothy Peter Mollart ,  John Robert Brandon

    IPC: C25B1/04 ,  C25B11/036 ,  C02F1/467 ,  C02F1/461 ,  C25B11/057

    Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.5 mm to 4 mm, and wherein the drive circuitry is configured to apply a potential across the electrodes giving a current density ≥15,000 Amp/m2 over an electrode area of at least 20 cm2 for an operating voltage of no more than 20 V.

    Synthetic diamond materials for electrochemical sensing applications
    8.
    发明授权
    Synthetic diamond materials for electrochemical sensing applications 有权

    公开(公告)号：US10290385B2

    公开(公告)日：2019-05-14

    申请号：US14382464

    申请日：2013-03-13

    Applicant: Element Six Technologies Limited

    Inventor： Eleni Bitziou ,  Laura Anne Hutton ,  Julie Victoria MacPherson ,  Mark Edward Newton ,  Patrick Robert Unwin ,  Nicola Louise Palmer ,  Timothy Peter Mollart ,  Joseph Michael Dodson

    IPC: H01B1/04 ,  G01N27/30

    Abstract: A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionized water and 0.1M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm−2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm−2; a peak-to-peak separation ΔEp (for a macroelectrode) or a quartile potential ΔE3/4_1/4 (for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV s−1 with respect to a saturated calomel reference electrode in a solution containing only deionized water, 0.1M KNO3 supporting electrolyte, and 1 mM of FcTMA+ or Ru(NH3)63+ at pH 6; and a capacitance of no more than 10 μF cm−2 as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and −70 mV in a solution containing only deionized water and 0.1M KNO3 supporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm2) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs−1) to give a value for capacitance in F cm−2.

    BORON DOPED DIAMOND BASED ELECTROCHEMICAL SENSOR HEADS
    9.
    发明申请
    BORON DOPED DIAMOND BASED ELECTROCHEMICAL SENSOR HEADS 审中-公开

    公开(公告)号：US20170322172A1

    公开(公告)日：2017-11-09

    申请号：US15527550

    申请日：2015-11-20

    Applicant: Element Six Technologies Limited

    Inventor： Laura Anne Hutton ,  Maxim Bruckshaw Joseph ,  Roy Edward Patrick Meyler ,  Julie Victoria Macpherson ,  Timothy Peter Mollart ,  Zoe Ayers

    IPC: G01N27/30

    CPC classification number: G01N27/302 ,  G01N27/308

    Abstract: An electrochemical sensor comprising: a boron doped diamond electrode formed of boron doped diamond material; an array of non-diamond carbon sites disposed on a sensing surface of the boron doped diamond electrode; electrochemically active surface groups bonded to the non-diamond carbon sites for generating a redox peak associated with a target species which reacts with the electrochemically active surface groups bonded to the non-diamond carbon sites when a solution containing the target species is disposed in contact with the sensing surface in use; an electrical controller configured to scan the boron doped diamond electrode over a potential range to generate said redox peak; and a processor configured to give an electrochemical reading based on one or both of a position and an intensity of said redox peak.

    Synthetic diamond coated compound semiconductor substrates
    10.
    发明授权
    Synthetic diamond coated compound semiconductor substrates 有权
    合成金刚石涂层化合物半导体衬底

    公开(公告)号：US09418833B2

    公开(公告)日：2016-08-16

    申请号：US14362843

    申请日：2012-12-12

    Applicant: Element Six Technologies Limited

    Inventor： Timothy Peter Mollart

    IPC: H01L21/02 ,  C23C16/27 ,  C30B29/04 ,  C30B25/10 ,  C30B25/18 ,  C23C16/458 ,  H01L23/373

    CPC classification number: H01L21/02115 ,  C23C16/271 ,  C23C16/274 ,  C23C16/4585 ,  C30B25/10 ,  C30B25/183 ,  C30B29/04 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02447 ,  H01L21/02527 ,  H01L21/0262 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapor deposition (CVD) reactor, the composite substrate comprising a single crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of synthetic diamond material thereon via a CVD technique; and growing a layer of CVD diamond material on the growth surface of the interface layer, wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a center point thereof is maintained to be no more than 80° C., and wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100.

    Abstract translation: 一种制造合成金刚石涂覆的化合物半导体衬底的方法，所述方法包括：将复合衬底装载到化学气相沉积（CVD）反应器中，所述复合衬底包括单晶载体晶片，外延生长在单晶化合物半导体层上 载体晶片和设置在化合物半导体层上的界面层，界面层通过CVD技术形成适于在其上生长合成金刚石材料的生长表面; 并且在界面层的生长表面上生长一层CVD金刚石材料，其中在CVD金刚石材料生长期间，其边缘和中心点之间的生长表面处的温度差保持在不超过80℃。 ，并且其中所述载体晶片具有不小于0.25 / 100的由厚度与宽度的比定义的纵横比。

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