公开(公告)号：US06900142B2

公开(公告)日：2005-05-31

申请号：US10604560

申请日：2003-07-30

申请人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

发明人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

摘要翻译： 提供了一种在电子部件如半导体晶片制造焊料互连件中去除暴露的种子层的方法，而不会损坏互连或下面的晶片衬底并以高的晶片产量。 焊料互连是无铅的或基本上无铅的，并且通常含有Sn。 在蚀刻步骤之后，使用草酸溶液接触晶片以除去部分种子层。 种子层通常是含Cu层，其具有包含阻挡金属如Ti，Ta和W的下阻挡层。在蚀刻后保留下阻挡层，并且草酸溶液抑制在阻挡层表面上形成Sn化合物 化合物可以掩蔽阻挡层和阻挡层蚀刻剂，导致晶片表面上不完全的阻挡层去除。 任何残留的导电阻挡层可能导致短路和其他晶片问题，并导致较低的晶圆产量。 优选去除电子蚀刻以去除覆盖在下阻挡层上的种子层的部分。