公开(公告)号：US06258627B1

公开(公告)日：2001-07-10

申请号：US09233388

申请日：1999-01-19

申请人： Joseph A. Benenati ,  William T. Chen ,  Lisa A. Fanti ,  Wayne J. Howell ,  John U. Knickerbocker

发明人： Joseph A. Benenati ,  William T. Chen ,  Lisa A. Fanti ,  Wayne J. Howell ,  John U. Knickerbocker

IPC分类号： H01L2144

CPC分类号： H01L24/28 ,  H01L21/563 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3436 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/3512 ,  H01L2924/00

摘要： An apparatus for and method of minimizing the thermo-mechanical fatigue of flip-chip packages. The interposer of the present invention, preferably comprising an organic polymer such as polyimide, contains apertures having conductive plugs inserted therein for joining a chip to a substrate in an electronic module utilizing flip-chip packaging. The interposer is selected to provide optimum spacing between the chip and substrate having a coefficient of thermal expansion adapted to the thermal cycling temperature extremes of the module components. The interposer may comprise an inner core with two adhesive outer layers which may comprise different materials to promote adhesion at their respective interfaces within a module. Conductive plugs are disposed within the apertures of the interposer comprising of a first and second solder or comprising a conductive plug having top and bottom surfaces coated with a conductive adhesive. Preferably, the first solder is disposed within an interior of the apertures and the second solder is disposed within an exterior of the apertures such that the first solder is between a first portion and a second portion of the second solder. Upon reflow, the second solder is reflowed while the first solder remains solid.

摘要翻译： 用于最小化倒装芯片封装的热机械疲劳的装置和方法。 本发明的插入物优选包含有机聚合物如聚酰亚胺，其中包含插入其中的导电插塞孔，其中使用倒装芯片封装将芯片连接到电子模块中的基片。 选择插入器以在芯片和衬底之间提供适合于模块部件的热循环温度极限的热膨胀系数的最佳间隔。 插入器可以包括具有两个粘合剂外层的内芯，其可以包括不同的材料以促进在其模块内的各自界面处的粘附。 导电插头设置在插入件的孔内，包括第一和第二焊料或包括具有涂覆有导电粘合剂的顶表面和底表面的导电插塞。 优选地，第一焊料设置在孔的内部，并且第二焊料设置在孔的外部内，使得第一焊料位于第二焊料的第一部分和第二部分之间。 在回流时，第二焊料回流，而第一焊料保持固体。

公开(公告)号：US07572726B2

公开(公告)日：2009-08-11

申请号：US11271760

申请日：2005-11-10

申请人： Julie C. Biggs ,  Tien-Jen Cheng ,  David E. Eichstadt ,  Lisa A. Fanti ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Sarah H. Knickerbocker ,  Kevin S. Petrarca ,  Roger A. Quon ,  Wolfgang Sauter ,  Kamalesh K. Srivastava ,  Richard P. Volant

发明人： Julie C. Biggs ,  Tien-Jen Cheng ,  David E. Eichstadt ,  Lisa A. Fanti ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Sarah H. Knickerbocker ,  Kevin S. Petrarca ,  Roger A. Quon ,  Wolfgang Sauter ,  Kamalesh K. Srivastava ,  Richard P. Volant

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.

摘要翻译： 一种在（I / C）芯片中形成引线键合的方法，包括：提供具有导电焊盘的I / C芯片，所述导电焊盘与覆盖所述焊盘的至少一层电介质材料进行引线接合; 通过暴露所述垫的一部分的电介质材料形成开口。 在衬垫的暴露表面和开口表面上形成至少第一导电层。 在第一导电层上形成种子层; 在种子层上施加光致抗蚀剂; 曝光和显影光致抗蚀剂，其显露出围绕开口的种子层的表面; 去除暴露的种子层; 去除开口中的光致抗蚀剂材料，露出种子层。 在开口中的种子层上电镀至少一层第二导电材料层，以及去除围绕开口的电介质层上的第一导电层。 本发明还包括所得到的结构。

公开(公告)号：US06995475B2

公开(公告)日：2006-02-07

申请号：US10666775

申请日：2003-09-18

申请人： Julie C. Biggs ,  Tien-Jen Cheng ,  David E. Eichstadt ,  Lisa A. Fanti ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Sarah H. Knickerbocker ,  Kevin S. Petrarca ,  Roger A. Quon ,  Wolfgang Sauter ,  Kamalesh K. Srivastava ,  Richard P. Volant

发明人： Julie C. Biggs ,  Tien-Jen Cheng ,  David E. Eichstadt ,  Lisa A. Fanti ,  Jonathan H. Griffith ,  Randolph F. Knarr ,  Sarah H. Knickerbocker ,  Kevin S. Petrarca ,  Roger A. Quon ,  Wolfgang Sauter ,  Kamalesh K. Srivastava ,  Richard P. Volant

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.

摘要翻译： 一种在（I / C）芯片中形成引线键合的方法，包括：提供具有导电焊盘的I / C芯片，所述导电焊盘与覆盖所述焊盘的至少一层电介质材料进行引线接合; 通过暴露所述垫的一部分的电介质材料形成开口。 在衬垫的暴露表面和开口表面上形成至少第一导电层。 在第一导电层上形成种子层; 在种子层上施加光致抗蚀剂; 曝光和显影光致抗蚀剂，其显露出围绕开口的种子层的表面; 去除暴露的种子层; 去除开口中的光致抗蚀剂材料，露出种子层。 在开口中的种子层上电镀至少一层第二导电材料层，以及去除围绕开口的电介质层上的第一导电层。 本发明还包括所得到的结构。

公开(公告)号：US06468413B1

公开(公告)日：2002-10-22

申请号：US09697333

申请日：2000-10-26

申请人： Lisa A. Fanti ,  John Michael Cotte ,  David Ely Eichstadt

发明人： Lisa A. Fanti ,  John Michael Cotte ,  David Ely Eichstadt

IPC分类号： C25F302

CPC分类号： C25F3/02 ,  H01L21/32134 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/1357 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/013

摘要： An aqueous electrochemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant including glycerol in the concentration range of 1.30 to 1.70 M, a sulfate compound having a sulfate ion concentration in the range of 0 to 0.5 M, and a phosphate compound having a phosphate ion concentration in the range of 0.1 to 0.5 M.

摘要翻译： 一种用于在一种或多种不被蚀刻的金属的存在下蚀刻金属的水性电化学蚀刻剂，包括浓度范围为1.30至1.70M的甘油的蚀刻剂，硫酸根离子浓度在0至0.5M范围内的硫酸盐化合物 ，磷酸盐化合物的磷酸盐离子浓度为0.1〜0.5M。

公开(公告)号：US6015505A

公开(公告)日：2000-01-18

申请号：US960839

申请日：1997-10-30

申请人： Lawrence D. David ,  Lisa A. Fanti

发明人： Lawrence D. David ,  Lisa A. Fanti

IPC分类号： C23F1/26 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/00

CPC分类号： H01L24/12 ,  H01L21/32134 ,  H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/11831 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351

摘要： A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.

摘要翻译： 用于在受保护金属存在下对薄膜金属进行化学湿法蚀刻的工艺和蚀刻剂溶液。 蚀刻溶液的pH范围为约2.7〜4.0。 蚀刻溶液可以包括过氧化氢，硫酸钾和EDTA钾，并且它减少或消除耐腐蚀金属的发生，而不损坏受保护的金属。

公开(公告)号：US5904156A

公开(公告)日：1999-05-18

申请号：US935490

申请日：1997-09-24

申请人： Gerald Gerard Advocate, Jr. ,  Lisa A. Fanti ,  Henry Atkinson Nye, III

发明人： Gerald Gerard Advocate, Jr. ,  Lisa A. Fanti ,  Henry Atkinson Nye, III

IPC分类号： C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/00 ,  B08B3/04

CPC分类号： C11D7/261 ,  C11D11/0047 ,  C11D7/5013 ,  G03F7/425 ,  H01L21/67075 ,  H01L21/67086 ,  C11D7/32 ,  Y10S134/902

摘要： A process for wet chemically stripping dry, thick film photoresists in semiconductor applications. This process includes contacting the silicon wafer with a stripping solution and agitating the solution. The process may be performed in a strip tank having a chemical stripping solution, and nitrogen or other inert gases may be provided through a pressurized tube to cause bubbling in the solution and to strip the wafer.

摘要翻译： 在半导体应用中湿法化学剥离干，厚膜光致抗蚀剂的方法。 该方法包括使硅晶片与剥离溶液接触并搅拌该溶液。 该方法可以在具有化学剥离溶液的条形槽中进行，并且可以通过加压管提供氮气或其它惰性气体，以在溶液中产生鼓泡并剥离晶片。

公开(公告)号：US08984929B2

公开(公告)日：2015-03-24

申请号：US13720065

申请日：2012-12-19

申请人： Lisa A. Fanti ,  Lloyd A. Brown ,  Serge M. Campeau ,  Ronald F. Spohn ,  Murat Gunay

发明人： Lisa A. Fanti ,  Lloyd A. Brown ,  Serge M. Campeau ,  Ronald F. Spohn ,  Murat Gunay

IPC分类号： G01M3/08 ,  G01M3/28 ,  G01M3/26

CPC分类号： G01M3/2876 ,  G01M3/26

摘要： A pressure indicating device for detecting and isolating leakage of toxic and/or pyrophoric gasses from within various packages is disclosed. The device can affix to a user port of a cylinder package. The device has a flexible disc-like structure which is fine tuned to outwardly flex in response to a build-up of pressure of the gas exerted against the disc-like structure. The flexed disc contacts a movable pin and pushes the push outwards from within the device. The outward movement of the pin pierces a paper seal extending over the device, thereby indicating a leak from within the valving of the package. The device withstands the pressure exerted against it, thereby also isolating the leak of the pressurized gas.

摘要翻译： 公开了用于检测和分离各种包装内的有毒和/或自燃气体的泄漏的压力指示装置。 该设备可以粘贴到气缸组件的用户端口。 该装置具有柔性盘状结构，其响应于对盘状结构施加的气体的压力的积聚而微调到向外弯曲。 弯曲的盘接触可动销，并从设备内向外推动推动。 销的向外运动刺穿延伸在装置上的纸密封件，从而指示从包装的阀内泄漏。 该装置承受施加在其上的压力，从而也隔离加压气体的泄漏。

公开(公告)号：US20140165706A1

公开(公告)日：2014-06-19

申请号：US13720065

申请日：2012-12-19

申请人： Lisa A. Fanti ,  Lloyd A. Brown ,  Serge M. Campeau ,  Ronald F. Spohn ,  Murat Gunay

发明人： Lisa A. Fanti ,  Lloyd A. Brown ,  Serge M. Campeau ,  Ronald F. Spohn ,  Murat Gunay

IPC分类号： G01M3/28

CPC分类号： G01M3/2876 ,  G01M3/26

摘要： A pressure indicating device for detecting and isolating leakage of toxic and/or pyrophoric gasses from within various packages is disclosed. The device can affix to a user port of a cylinder package. The device has a flexible disc-like structure which is fine tuned to outwardly flex in response to a build-up of pressure of the gas exerted against the disc-like structure. The flexed disc contacts a movable pin and pushes the push outwards from within the device. The outward movement of the pin pierces a paper seal extending over the device, thereby indicating a leak from within the valving of the package. The device withstands the pressure exerted against it, thereby also isolating the leak of the pressurized gas.

摘要翻译： 公开了用于检测和分离各种包装内的有毒和/或自燃气体的泄漏的压力指示装置。 该设备可以粘贴到气缸组件的用户端口。 该装置具有柔性盘状结构，其响应于对盘状结构施加的气体的压力的积聚而微调到向外弯曲。 弯曲的盘接触可动销，并从设备内向外推动推动。 销的向外运动刺穿延伸在装置上的纸密封件，从而指示从包装的阀内泄漏。 该装置承受施加在其上的压力，从而也隔离加压气体的泄漏。

公开(公告)号：US06900142B2

公开(公告)日：2005-05-31

申请号：US10604560

申请日：2003-07-30

申请人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

发明人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

摘要翻译： 提供了一种在电子部件如半导体晶片制造焊料互连件中去除暴露的种子层的方法，而不会损坏互连或下面的晶片衬底并以高的晶片产量。 焊料互连是无铅的或基本上无铅的，并且通常含有Sn。 在蚀刻步骤之后，使用草酸溶液接触晶片以除去部分种子层。 种子层通常是含Cu层，其具有包含阻挡金属如Ti，Ta和W的下阻挡层。在蚀刻后保留下阻挡层，并且草酸溶液抑制在阻挡层表面上形成Sn化合物 化合物可以掩蔽阻挡层和阻挡层蚀刻剂，导致晶片表面上不完全的阻挡层去除。 任何残留的导电阻挡层可能导致短路和其他晶片问题，并导致较低的晶圆产量。 优选去除电子蚀刻以去除覆盖在下阻挡层上的种子层的部分。

公开(公告)号：US6130170A

公开(公告)日：2000-10-10

申请号：US384104

申请日：1999-08-26

申请人： Lawrence D. David ,  Lisa A. Fanti

发明人： Lawrence D. David ,  Lisa A. Fanti

IPC分类号： C23F1/26 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/461

CPC分类号： H01L24/12 ,  H01L21/32134 ,  H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/11831 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351

摘要： A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.