摘要:
An image display tube constructed by use of in-tube parts comprising an alloy constituting essentially of (i) at least one of 0.5 to 4% by weight of Ti, 0.1 to 3.0% by weight of Al, 0 to 1% by weight of C, 0 to 5% by weight of Co, 0 to 12% by weight of Mo, 0 to 5% by weight of W, 0 to 4% by weight of Mn, 0 to 3% by weight of Si, 0 to 2% by weight of Be, 0 to 0.5% by weight of Cu, 0 to 0.1% by weight os S, 0 to 2% by weight of Nb and 0 to 2.0% by weight of Zr, (ii) 30 to 45% by weight of Ni, (iii) 3 to 15% by weight of Cr and (iv) a balance consisting essentially of Fe; thermoelasticity coefficient of the alloy being within the range of .+-.20.times.10.sup.-6 /.degree.C. In the color image display tubes according to this invention, no color deviation is perceived all over the screen and thus a high-quality image is obtained.
摘要:
A cast ingot of an invar alloy is forged, hot-and cold-rolled, annealed and subjected to a controlled rolling to provide a shadow mask plate. An X-ray diffraction pattern is formed in an electron-beam hole-formation surface of the shadow mask plate, and a draft in a controlled rolling step is so controlled that the "g" value is 2 or more. The "g" value is given asg=(I.sub.1 +I.sub.2)/I.sub.3whereI.sub.1 =the X-ray diffraction integrated intensity at the {200} crystal faces;I.sub.2 =the X-ray diffraction integrated intensity at the {111} crystal faces; andI.sub.3 =the X-ray diffraction integrated intensity at the {220} crystal faces.The shadow mask plate is etched to provide shadow masks each having electron-beam holes formed therein, noting that one hole surface side which has greater {100} texture is used as a larger-diameter hole surface side.
摘要:
Disclosed is a shadow mask plate material which consists of an Fe-Ni-based alloy containing iron and nickel as main constituents, has an unrecrystallized texture with a grain size of 10 .mu.m or less, and is excellent in etching characteristics for forming electron beam apertures.
摘要:
Disclosed is a shadow mask comprising an alloy such as an inver type alloy and having {100} texture on a mask face. Also disclosed is a useful process for preparing the shadow mask.
摘要:
Color picture tube in which a tube element, e.g., the shadow mask, is constituted by an Fe alloy to which 25-45 wt % of Ni and at least some Cr are added. A Cr rich layer is formed on the tube element surface and black oxide film with a spinel structure containing Cr is formed on the surface of this film.
摘要:
A front end element, such as a shadow mask, for a color cathode ray tube is made from an alloy including iron and nickel as its principal components; and a black oxide layer is formed integrally on the alloy base. The black oxide layer consists essentially of a spinel-type oxide with the formula Ni.sub.x Fe.sub.(3-x) O.sub.4, where x is a positive number less than 3. A front end element constructed in this way produces a higher quality picture because of reduced thermal expansion.
摘要:
In-tube component material for an electronic tube such as a color cathode ray tube, of low thermal expansion coefficient and grain size 2,000-40,000 grains/mm.sup.2, containing Fe as the main constituent and 25-45 wt % Ni, 0.3-10 wt % Cr, and 0-10 wt % Co, and a method of manufacturing it.
摘要:
A method of manufacturing a picture tube shadow mask wherein a thin metal plate containing iron and nickel as major components is first etched to form a plurality of mask apertures, then, annealing of the metal plate is performed and, after being cooled in a reducing atmosphere, a darkened oxide layer is formed on the surface of the annealed metal plate by subjecting the metal plate at first to a relatively weak oxidizing steam atmosphere and then to a relatively strong oxidizing steam atmosphere.
摘要:
A color cathode ray tube having a mask frame, a shadow mask attached to the mask frame and inner shield attached to the mask frame. At least one of these parts is made substantially of iron (Fe) and has a oxidized layer on its surface. That part further includes silicon (Si), aluminum (Al) and chromium (Cr) as impurity elements in weight amounts satisfying the following relation:Cr.gtoreq.1/3(Al+Si).
摘要:
A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.