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公开(公告)号：US20130002363A1
公开(公告)日：2013-01-03
申请号：US13173449
申请日：2011-06-30
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译： 微机电系统（MEMS）装置包括锚定到基板的谐振器。 谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。 谐振器包括锚定到基板的第一电极。 第一电极包括第一电极的释放部分的第二应变梯度。 第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。 谐振器可以包括锚定到衬底的谐振器锚。 第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。 电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。
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公开(公告)号：US20120329255A1
公开(公告)日：2012-12-27
申请号：US13599240
申请日：2012-08-30
IPC分类号： H01L21/20
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.
摘要翻译： 形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。 该方法包括在衬底上形成结构层。 结构层围绕电极的周边设置并具有残余膜应力梯度。 该方法包括释放结构层以形成耦合到衬底的谐振器。 残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。
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公开(公告)号：US08258893B2
公开(公告)日：2012-09-04
申请号：US13173432
申请日：2011-06-30
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
摘要翻译： 微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。 谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。 调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。 在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。
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4.发明授权MEMS structure having a stress inverter temperature-compensated resonator member 有权具有应力逆变器温度补偿谐振器构件的MEMS结构公开(公告)号：US07956517B1
公开(公告)日：2011-06-07
申请号：US12204713
申请日：2008-09-04
IPC分类号： H01L23/34
CPC分类号： H03H3/0076 , B81B3/0072 , B81B2201/0271 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
摘要翻译： 描述了具有温度补偿谐振器元件的MEMS结构。 MEMS结构包括与衬底耦合的不对称应力逆变器部件。 谐振器构件容纳在不对称应力逆变器构件中并悬置在衬底上。 不对称应力逆变器构件用于通过响应于温度变化在谐振器构件上引起应力来改变谐振器构件的频率的热系数。
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公开(公告)号：US08674775B2
公开(公告)日：2014-03-18
申请号：US13173449
申请日：2011-06-30
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译： 微机电系统（MEMS）装置包括锚定到基板的谐振器。 谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。 谐振器包括锚定到基板的第一电极。 第一电极包括第一电极的释放部分的第二应变梯度。 第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。 谐振器可以包括锚定到衬底的谐振器锚。 第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。 电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。
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公开(公告)号：US08629739B2
公开(公告)日：2014-01-14
申请号：US13599240
申请日：2012-08-30
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.
摘要翻译： 形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。 该方法包括在衬底上形成结构层。 结构层围绕电极的周边设置并具有残余膜应力梯度。 该方法包括释放结构层以形成耦合到衬底的谐振器。 残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。
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公开(公告)号：US20110260810A1
公开(公告)日：2011-10-27
申请号：US13173432
申请日：2011-06-30
IPC分类号： H03H9/24
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
摘要翻译： 微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。 谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。 调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。 在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。
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公开(公告)号：US20130002364A1
公开(公告)日：2013-01-03
申请号：US13173815
申请日：2011-06-30
申请人： Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
IPC分类号： H03B5/30
CPC分类号： H03B5/06 , H03B5/323 , H03B2200/0082 , H03H9/02259 , H03H9/2457 , H03H2009/02496 , H03H2009/02511
摘要： A MEMS oscillator includes a resonator body and primary and secondary drive electrodes to electrostatically drive the resonator body. Primary and secondary sense electrodes sense motion of the resonator body. The primary and secondary drive and sense electrodes are configured to be used together during start-up of the MEMS oscillator. The secondary drive electrode and secondary sense electrode are disabled after start-up, while the primary drive and sense electrodes remain enabled to maintain oscillation.
摘要翻译： MEMS振荡器包括谐振器体和用于静电驱动谐振器体的初级和次级驱动电极。 初级和次级感测电极感测谐振器体的运动。 主驱动和感测电极被配置为在MEMS振荡器启动期间一起使用。 辅助驱动电极和次级感测电极在启动后被禁用，而主驱动电极和感测电极保持启用以保持振荡。
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公开(公告)号：US08471641B2
公开(公告)日：2013-06-25
申请号：US13173815
申请日：2011-06-30
申请人： Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
IPC分类号： H03B5/30
CPC分类号： H03B5/06 , H03B5/323 , H03B2200/0082 , H03H9/02259 , H03H9/2457 , H03H2009/02496 , H03H2009/02511
摘要： A MEMS oscillator includes a resonator body and primary and secondary drive electrodes to electrostatically drive the resonator body. Primary and secondary sense electrodes sense motion of the resonator body. The primary and secondary drive and sense electrodes are configured to be used together during start-up of the MEMS oscillator. The secondary drive electrode and secondary sense electrode are disabled after start-up, while the primary drive and sense electrodes remain enabled to maintain oscillation.
摘要翻译： MEMS振荡器包括谐振器体和用于静电驱动谐振器体的初级和次级驱动电极。 初级和次级感测电极感测谐振器体的运动。 主驱动和感测电极被配置为在MEMS振荡器启动期间一起使用。 辅助驱动电极和次级感测电极在启动后禁用，而主驱动电极和感测电极保持启用以保持振荡。
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公开(公告)号：US07999635B1
公开(公告)日：2011-08-16
申请号：US12182082
申请日：2008-07-29
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A residual stress gradient in a structural layer is employed to form a resonator deflected out of plane when at rest and the resulting strain gradient is utilized in out-of-plane transduction. Use of the strain gradient enables out-of-plane (e.g., vertical) transduction without yield and reliability problems due to stiction (e.g., the sticking of the resonator to the substrate) when the resonator is driven by an electrode to dynamically deflect out-of-plane. In particular embodiments, out-of-plane transduction is utilized to achieve better transduction efficiency as compared to lateral resonator designs of similar linear dimensions (i.e. footprint) results in a lower motional resistance.
摘要翻译： 采用结构层中的残余应力梯度来形成在静止时偏离平面的共振器，并将所得到的应变梯度用于平面外转导。 当谐振器被电极驱动时，使用应变梯度可以实现平面外（例如垂直）转换，而不会由于静电（例如，将谐振器粘附到基板上）而产生屈服和可靠性问题， 的飞机。 在特定实施例中，与具有类似线性尺寸（即占地面积）导致较低运动阻力的横向谐振器设计相比，利用面外换能获得更好的换能效率。
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