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1.发明授权Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device 有权用于偏置EEPROM非易失性存储器阵列和相应的EEPROM非易失性存储器件的方法公开(公告)号：US08376237B2
公开(公告)日：2013-02-19
申请号：US12885028
申请日：2010-09-17
IPC分类号： G06K19/06
CPC分类号： G11C16/0433 , G11C16/10 , G11C16/16
摘要： Described herein is a method for biasing an EEPROM array formed by memory cells arranged in rows and columns, each operatively coupled to a first switch and to a second switch and having a first current-conduction terminal selectively connectable to a bitline through the first switch and a control terminal selectively connectable to a gate-control line through the second switch, wherein associated to each row are a first wordline and a second wordline, connected to the control terminals of the first switches and, respectively, of the second switches operatively coupled to the memory cells of the same row. The method envisages selecting at least one memory cell for a given memory operation, biasing the first wordline and the second wordline of the row associated thereto, and in particular biasing the first and second wordlines with voltages different from one another and having values that are higher than an internal supply voltage and are a function of the given memory operation.
摘要翻译： 这里描述了一种用于偏置由排列成行和列的存储器单元形成的EEPROM阵列的方法，每个可操作地耦合到第一开关和第二开关，并且具有通过第一开关选择性地连接到位线的第一导通端子， 选择性地可连接到通过第二开关的栅极控制线的控制终端，其中与每一行相关联的是分别连接到第一开关的控制端的第一字线和第二字线，以及分别操作地耦合到 同一行的存储单元。 该方法设想为给定的存储器操作选择至少一个存储器单元，偏置与其相关联的行的第一字线和第二字线，并且特别是以彼此不同的电压偏置第一和第二字线并且具有更高的值 而不是内部电源电压，并且是给定存储器操作的函数。
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公开(公告)号：US20080007321A1
公开(公告)日：2008-01-10
申请号：US11771157
申请日：2007-06-29
IPC分类号： G05F1/10
摘要： An integrated control circuit for a charge pump includes a first device for regulating the output voltage of the charge pump and a second device for increasing the output voltage from the charge pump with a set ramp. The integrated circuit includes means for activating said first device and providing it with a first value of a supply signal in a first period of time and for activating the second device and providing it with a second value of the supply signal that is greater than the first value in a second period of time after the first in such a way that the output voltage of the charge pump ascends a ramp from a first value to a second value that is greater than the first value, the second value being fixed by reactivation of the first device.
摘要翻译： 用于电荷泵的集成控制电路包括用于调节电荷泵的输出电压的第一装置和用于通过设定斜坡增加来自电荷泵的输出电压的第二装置。 集成电路包括用于激活所述第一设备并且在第一时间段内向其提供电源信号的第一值并且用于激活第二设备并且向其提供大于第一设备的第二电源信号的第二值的装置 在第一次之后的第二时间段内的值以使得电荷泵的输出电压从第一值升高到大于第一值的第二值的斜坡，第二值通过重新激活固定 第一个装置
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3.发明申请METHOD FOR BIASING AN EEPROM NON-VOLATILE MEMORY ARRAY AND CORRESPONDING EEPROM NON-VOLATILE MEMORY DEVICE 有权用于偏移EEPROM非易失性存储器阵列和对应EEPROM非易失性存储器件的方法公开(公告)号：US20110068179A1
公开(公告)日：2011-03-24
申请号：US12885028
申请日：2010-09-17
IPC分类号： G06K19/073 , G11C16/14 , G11C16/12
CPC分类号： G11C16/0433 , G11C16/10 , G11C16/16
摘要： Described herein is a method for biasing an EEPROM array formed by memory cells arranged in rows and columns, each operatively coupled to a first switch and to a second switch and having a first current-conduction terminal selectively connectable to a bitline through the first switch and a control terminal selectively connectable to a gate-control line through the second switch, wherein associated to each row are a first wordline and a second wordline, connected to the control terminals of the first switches and, respectively, of the second switches operatively coupled to the memory cells of the same row. The method envisages selecting at least one memory cell for a given memory operation, biasing the first wordline and the second wordline of the row associated thereto, and in particular biasing the first and second wordlines with voltages different from one another and having values that are higher than an internal supply voltage and are a function of the given memory operation.
摘要翻译： 这里描述了一种用于偏置由排列成行和列的存储器单元形成的EEPROM阵列的方法，每个可操作地耦合到第一开关和第二开关，并且具有通过第一开关选择性地连接到位线的第一导通端子， 选择性地可连接到通过第二开关的栅极控制线的控制终端，其中与每一行相关联的是分别连接到第一开关的控制端的第一字线和第二字线，以及分别操作地耦合到 同一行的存储单元。 该方法设想为给定的存储器操作选择至少一个存储器单元，偏置与其相关联的行的第一字线和第二字线，并且特别是以彼此不同的电压偏置第一和第二字线并且具有更高的值 而不是内部电源电压，并且是给定存储器操作的函数。
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公开(公告)号：US07602230B2
公开(公告)日：2009-10-13
申请号：US11771157
申请日：2007-06-29
IPC分类号： H03K3/01
摘要： An integrated control circuit for a charge pump includes a first device for regulating the output voltage of the charge pump and a second device for increasing the output voltage from the charge pump with a set ramp. The integrated circuit includes means for activating said first device and providing it with a first value of a supply signal in a first period of time and for activating the second device and providing it with a second value of the supply signal that is greater than the first value in a second period of time after the first in such a way that the output voltage of the charge pump ascends a ramp from a first value to a second value that is greater than the first value, the second value being fixed by reactivation of the first device.
摘要翻译： 用于电荷泵的集成控制电路包括用于调节电荷泵的输出电压的第一装置和用于通过设定斜坡增加来自电荷泵的输出电压的第二装置。 集成电路包括用于激活所述第一设备并且在第一时间段内向其提供电源信号的第一值并且用于激活第二设备并且向其提供大于第一设备的第二电源信号的第二值的装置 在第一次之后的第二时间段内的值以使得电荷泵的输出电压从第一值升高到大于第一值的第二值的斜坡，第二值通过重新激活固定 第一个装置
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公开(公告)号：US08619489B2
公开(公告)日：2013-12-31
申请号：US13095025
申请日：2011-04-27
IPC分类号： G11C5/14
摘要： An electrically programmable non-volatile memory device is proposed. The memory device includes a plurality of memory cells and a driver circuit for driving the memory cells; the driver circuit includes programming means for providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period being required by the second programming voltage to reach a second target value thereof.
摘要翻译： 提出了一种电可编程非易失性存储器件。 存储装置包括多个存储单元和用于驱动存储单元的驱动电路; 所述驱动器电路包括用于向所选择的存储器单元的集合提供第一编程电压和第二编程电压的编程装置，用于对所选择的存储器单元进行编程; 第一编程电压需要用于达到其第一目标值的第一瞬态周期。 在根据本发明的实施例的解决方案中，编程装置包括用于在第二编程电压需要第二编程电压以达到其第二目标值的第二过渡时段期间将第二编程电压基本上等于第一编程电压的装置。
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公开(公告)号：US08406068B2
公开(公告)日：2013-03-26
申请号：US12884380
申请日：2010-09-17
IPC分类号： G11C7/00
CPC分类号： H03K3/35613 , H03K19/018528
摘要： A voltage shifter has a supply line receiving a supply voltage that varies between a first operating value in a first operating condition and a second high operating value, in a second operating condition. A latch stage is connected to an output branch and to a selection circuit, which receives a selection signal that controls switching of the latch stage. The latch stage is coupled to the supply line and to a reference potential line, which receives a reference voltage that can vary between a first reference value, when the supply voltage has the first operating value, and a second reference value, higher than the first reference value, when the supply voltage has the second operating value. An uncoupling stage is arranged between the latch stage and the selection circuit and uncouples them in the second operating condition, when the supply voltage and the reference voltage are at their second, high, value.
摘要翻译： 电压移位器具有在第二操作状态下接收在第一操作状态下的第一操作值和第二高操作值之间变化的电源电压的电源线。 锁存级连接到输出分支和选择电路，选择电路接收控制锁存级的切换的选择信号。 锁存级耦合到电源线和参考电位线，该参考电位线接收参考电压，该参考电压可以在电源电压具有第一操作值时在第一参考值和第二参考值之间变化，第二参考值高于第一参考值 参考值，当电源电压具有第二个工作值时。 当电源电压和参考电压处于其第二，高值时，在锁存级和选择电路之间布置解耦级并且在第二操作条件下使它们断开。
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7.发明申请SENSE-AMPLIFIER CIRCUIT FOR NON-VOLATILE MEMORIES THAT OPERATES AT LOW SUPPLY VOLTAGES 有权用于低电压下运行的非易失性存储器的感应放大器电路公开(公告)号：US20110069554A1
公开(公告)日：2011-03-24
申请号：US12883072
申请日：2010-09-15
IPC分类号： G11C16/06
摘要： A sense-amplifier circuit includes: a comparison stage that compares a cell current that flows in a memory cell and through an associated bitline, with a reference current, for supplying an output signal indicating the state of the memory cell; and a precharging stage, which supplies, during a precharging step prior to the comparison step, a precharging current to the bitline so as to charge a capacitance thereof. The comparison stage includes a first comparison transistor and by a second comparison transistor, which are coupled in current-mirror configuration respectively to a first differential output and to a second differential output, through which a biasing current flows. The precharging stage diverts, during the precharging step, the biasing current towards the bitline as precharging current, and allows, during the comparison step, passage of part of the biasing current towards the first differential output, enabling operation of the current mirror.
摘要翻译： 感测放大器电路包括：比较级，其将存储单元中流动的单元电流和相关联的位线与参考电流进行比较，用于提供指示存储单元的状态的输出信号; 以及预充电阶段，其在比较步骤之前的预充电步骤期间向位线提供预充电电流以对其电容充电。 比较级包括第一比较晶体管和第二比较晶体管，其以电流镜配置分别耦合到第一差分输出和偏置电流流过的第二差分输出。 预充电阶段在预充电步骤期间将作为预充电电流的朝向位线的偏置电流转移，并且在比较步骤期间允许偏置电流的一部分朝向第一差分输出通过，使得能够操作电流镜。
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8.发明申请CIRCUIT AND METHOD FOR GENERATING A REFERENCE VOLTAGE IN MEMORY DEVICES HAVING A NON-VOLATILE CELL MATRIX 有权在具有非易失性单元矩阵的存储器件中产生参考电压的电路和方法公开(公告)号：US20080130361A1
公开(公告)日：2008-06-05
申请号：US11941688
申请日：2007-11-16
申请人： Antonino Conte , Mario Micciche , Gianbattista Lo Giudice , Alberto Di Martino , Giampiero Sberno
发明人： Antonino Conte , Mario Micciche , Gianbattista Lo Giudice , Alberto Di Martino , Giampiero Sberno
CPC分类号： G11C16/30
摘要： A generator circuit generates a reference voltage on an output terminal connected to a matrix of non-volatile memory cells and includes a comparator positioned between a common node and the output terminal. The comparator has first and second input terminals and an output terminal suitable for supplying a compared voltage given by comparing first and second voltage values present on the first and second input terminals. The circuit includes a reference cell inserted between the common node and a first voltage reference. Advantageously, the reference cell comprises a floating gate with a contact terminal coupled to a biasing block, having an input terminal connected to the output terminal of the generator circuit and being suitable for periodically biasing the floating gate contact terminal at a biasing voltage of a second voltage reference.
摘要翻译： 发电机电路在连接到非易失性存储器单元矩阵的输出端上产生参考电压，并且包括位于公共节点和输出端之间的比较器。 比较器具有第一和第二输入端子和适于提供通过比较第一和第二输入端子上存在的第一和第二电压值给出的比较电压的输出端子。 电路包括插入公共节点和第一电压基准之间的参考单元。 有利地，参考单元包括具有耦合到偏置块的接触端子的浮动栅极，其具有连接到发生器电路的输出端子的输入端子，并且适于在第二个偏置电压周期性地偏置浮置栅极接触端子 电压参考。
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公开(公告)号：US20110267891A1
公开(公告)日：2011-11-03
申请号：US13095025
申请日：2011-04-27
摘要： An electrically programmable non-volatile memory device is proposed. The memory device includes a plurality of memory cells and a driver circuit for driving the memory cells; the driver circuit includes programming means for providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period being required by the second programming voltage to reach a second target value thereof.
摘要翻译： 提出了一种电可编程非易失性存储器件。 存储装置包括多个存储单元和用于驱动存储单元的驱动电路; 所述驱动器电路包括用于向所选择的存储器单元的集合提供第一编程电压和第二编程电压的编程装置，用于对所选择的存储器单元进行编程; 第一编程电压需要用于达到其第一目标值的第一瞬态周期。 在根据本发明的实施例的解决方案中，编程装置包括用于在第二编程电压需要第二编程电压以达到其第二目标值的第二过渡时段期间将第二编程电压基本上等于第一编程电压的装置。
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公开(公告)号：US20110069563A1
公开(公告)日：2011-03-24
申请号：US12884380
申请日：2010-09-17
CPC分类号： H03K3/35613 , H03K19/018528
摘要： A voltage shifter has a supply line receiving a supply voltage that varies between a first operating value in a first operating condition and a second high operating value, in a second operating condition. A latch stage is connected to an output branch and to a selection circuit, which receives a selection signal that controls switching of the latch stage. The latch stage is coupled to the supply line and to a reference potential line, which receives a reference voltage that can vary between a first reference value, when the supply voltage has the first operating value, and a second reference value, higher than the first reference value, when the supply voltage has the second operating value. An uncoupling stage is arranged between the latch stage and the selection circuit and uncouples them in the second operating condition, when the supply voltage and the reference voltage are at their second, high, value.
摘要翻译： 电压移位器具有在第二操作状态下接收在第一操作状态下的第一操作值和第二高操作值之间变化的电源电压的电源线。 锁存级连接到输出分支和选择电路，选择电路接收控制锁存级的切换的选择信号。 锁存级耦合到电源线和参考电位线，该参考电位线接收参考电压，该参考电压可以在电源电压具有第一操作值时在第一参考值和第二参考值之间变化，第二参考值高于第一参考值 参考值，当电源电压具有第二个工作值时。 当电源电压和参考电压处于其第二，高值时，在锁存级和选择电路之间布置解耦级并且在第二操作条件下使它们断开。
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