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公开(公告)号:US20180204736A1
公开(公告)日:2018-07-19
申请号:US15874388
申请日:2018-01-18
Applicant: Entegris, Inc.
Inventor: Daniela White , Thomas Parson , Michael White , Emmanuel I. Cooper , Atanu Das
Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
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公开(公告)号:US20180148669A1
公开(公告)日:2018-05-31
申请号:US15821217
申请日:2017-11-22
Applicant: Entegris, Inc.
Inventor: Makonnen Payne , Emmanuel I. Cooper , WonLae Kim , Eric Hong , Sean Kim
CPC classification number: C11D3/33 , C11D1/62 , C11D3/0073 , C11D3/06 , C11D3/2068 , C11D3/2082 , C11D3/28 , C11D3/3942 , C11D3/43 , C11D7/3209 , C11D7/36 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02068
Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.
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