公开(公告)号：US10988718B2

公开(公告)日：2021-04-27

申请号：US16308053

申请日：2017-03-09

Applicant: ENTEGRIS, INC. ,  Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

Inventor： Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02 ,  C11D1/08 ,  C11D1/00 ,  C23F1/26 ,  C23F1/28 ,  B08B3/08 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

公开(公告)号：US20180204736A1

公开(公告)日：2018-07-19

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emmanuel I. Cooper ,  Atanu Das

IPC: H01L21/321 ,  C09G1/16 ,  C09G1/04 ,  C01F17/00 ,  C08L33/10 ,  C08L33/08

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US11164738B2

公开(公告)日：2021-11-02

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emanuel I. Cooper ,  Atanu Das

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/321 ,  C08L33/08 ,  C08L33/10 ,  C09G1/16

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US10340150B2

公开(公告)日：2019-07-02

申请号：US15103593

申请日：2014-12-16

Applicant: Entegris, Inc. ,  ATMI TAIWAN CO., LTD.

Inventor： Steven Bilodeau ,  Jeffrey A. Barnes ,  Emanuel Cooper ,  Hsing-Chen Wu ,  Sheng-Hung Tu ,  Thomas Parson ,  Min-chieh Yang

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45 ,  C09G1/04 ,  H01L21/24

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.