公开(公告)号：US20050142897A1

公开(公告)日：2005-06-30

申请号：US10934153

申请日：2004-09-03

申请人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

发明人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

IPC分类号： G02F1/13 ,  B23K26/00 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026

摘要： Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

摘要翻译： 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位，第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位，并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理，从而使非晶硅膜结晶成多晶硅膜。

公开(公告)号：US20050142299A1

公开(公告)日：2005-06-30

申请号：US10934826

申请日：2004-09-03

申请人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

发明人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

IPC分类号： H01L21/20 ,  B05D3/00 ,  C30B13/24 ,  C30B29/06 ,  G02F1/13 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/6675 ,  C30B13/24 ,  C30B29/06

摘要： Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

摘要翻译： 公开了一种形成多晶硅薄膜晶体管的多晶硅膜的方法。 该方法包括通过使用掩模图案将激光束照射到非晶硅膜上而使沉积在玻璃基板上的非晶硅膜结晶的步骤。 当通过具有掩模图案的掩模将激光束照射到非晶硅膜上时，玻璃基板水平移动与掩模图案的平移距离对应的预定距离单位，从而生长为圆形的晶粒。

公开(公告)号：US20060051904A1

公开(公告)日：2006-03-09

申请号：US11085953

申请日：2005-03-22

申请人： Kyoung Son ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Lee ,  Se Kwon ,  Jang Im

发明人： Kyoung Son ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Lee ,  Se Kwon ,  Jang Im

IPC分类号： H01L21/84 ,  H01L21/20

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US20050142708A1

公开(公告)日：2005-06-30

申请号：US10930011

申请日：2004-08-30

申请人： Kyoung Seok Son ,  Ho Nyeon Lee ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Ho Lee ,  Se Kwon

发明人： Kyoung Seok Son ,  Ho Nyeon Lee ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Ho Lee ,  Se Kwon

IPC分类号： H01L21/20 ,  G02F1/136 ,  H01L21/00 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/02675 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765

摘要： Disclosed herein is a method for forming a polycrystalline (poly-Si) film by the crystallization of an amorphous silicon film using laser light irradiation. The disclosed method comprises the steps of: sequentially depositing a buffer film and an amorphous silicon film on a glass substrate; depositing a metal film having laser light reflection function on the back side of the glass substrate; and irradiating the front side of the amorphous silicon film with laser light to crystallize the amorphous silicon film. In the laser light irradiation step, the irradiated laser light is absorbed into the amorphous silicon film, and a portion of the absorbed laser light is transmitted through the amorphous silicon film. The transmitted light is reflected from the metal film and absorbed into the amorphous silicon film again, thus crystallizing the amorphous silicon film twice over. According to the present invention, the amorphous silicon film is crystallized twice over so that a polycrystalline film having very large grains can be formed.

摘要翻译： 本文公开了通过使用激光照射使非晶硅膜结晶来形成多晶（poly-Si）膜的方法。 所公开的方法包括以下步骤：在玻璃基板上依次沉积缓冲膜和非晶硅膜; 在玻璃基板的背面上沉积具有激光反射功能的金属膜; 并用激光照射非晶硅膜的正面以使非晶硅膜结晶。 在激光照射工序中，照射的激光被非晶硅膜吸收，一部分被吸收的激光透过非晶硅膜。 透射的光从金属膜反射并再次吸收到非晶硅膜中，从而使非晶硅膜结晶两次。 根据本发明，非晶硅膜结晶两次，从而可以形成具有非常大晶粒的多晶膜。

公开(公告)号：USD457148S1

公开(公告)日：2002-05-14

申请号：US29142380

申请日：2001-05-25

申请人： Kwang Ho Jung ,  Eok Kim

设计人： Kwang Ho Jung ,  Eok Kim

公开(公告)号：US08738902B2

公开(公告)日：2014-05-27

申请号：US13359507

申请日：2012-01-27

申请人： Won Suk Yoo ,  Eok Kim ,  Jenny Lawrance ,  Aniello Scotto Di Marco ,  Yamini Jagadeesan ,  Wade Hilmo

发明人： Won Suk Yoo ,  Eok Kim ,  Jenny Lawrance ,  Aniello Scotto Di Marco ,  Yamini Jagadeesan ,  Wade Hilmo

IPC分类号： H04L29/06

CPC分类号： H04L61/15 ,  H04L61/6063 ,  H04L63/0823 ,  H04L63/166 ,  H04L67/02

摘要： Embodiments disclose a reverse lookup using an IP:Port-to-hostname table to identify a hostname when only an IP address and port is present in an SSL hello connection, which may occur, for example, when a non-SNI-capable client initiates the SSL hello. Once the hostname is successfully looked up, a naming convention is used to simplify the management and identification of SSL certificates. Different types of SSL certificates are supported. Multiple hostname matches may be associated with a given IP address and port in the IP:Port-to-hostname table. In such case, the first-matching hostname is always used with the naming convention to identify related SSL certificates. The naming convention is applied in such a way that it will first look for the most matching file name to the least matching file name.

摘要翻译： 实施例公开了使用IP：端口到主机名表的反向查找，以便在SSL hello连接中仅存在IP地址和端口时识别主机名，例如，当非SNI能力的客户端发起时 SSL你好。 一旦主机名成功查找，使用命名约定来简化SSL证书的管理和标识。 支持不同类型的SSL证书。 多个主机名匹配可能与IP：端口到主机名表中的给定IP地址和端口相关联。 在这种情况下，首选匹配的主机名始终与命名约定一起使用，以标识相关的SSL证书。 命名约定以这样一种方式应用，它将首先查找与匹配最少的文件名匹配的最匹配的文件名。

公开(公告)号：US20130198511A1

公开(公告)日：2013-08-01

申请号：US13359507

申请日：2012-01-27

申请人： Won Suk Yoo ,  Eok Kim ,  Jenny Lawrance ,  Aniello Scotto Di Marco ,  Yamini Jagadeesan ,  Wade Hilmo

发明人： Won Suk Yoo ,  Eok Kim ,  Jenny Lawrance ,  Aniello Scotto Di Marco ,  Yamini Jagadeesan ,  Wade Hilmo

IPC分类号： H04L29/06

CPC分类号： H04L61/15 ,  H04L61/6063 ,  H04L63/0823 ,  H04L63/166 ,  H04L67/02

摘要： Embodiments disclose a reverse lookup using an IP:Port-to-hostname table to identify a hostname when only an IP address and port is present in an SSL hello connection, which may occur, for example, when a non-SNI-capable client initiates the SSL hello. Once the hostname is successfully looked up, a naming convention is used to simplify the management and identification of SSL certificates. Different types of SSL certificates are supported. Multiple hostname matches may be associated with a given IP address and port in the IP:Port-to-hostname table. In such case, the first-matching hostname is always used with the naming convention to identify related SSL certificates. The naming convention is applied in such a way that it will first look for the most matching file name to the least matching file name.

摘要翻译： 实施例公开了使用IP：端口到主机名表的反向查找，以便在SSL hello连接中仅存在IP地址和端口时识别主机名，例如，当非SNI能力的客户端发起时 SSL你好。 一旦主机名成功查找，使用命名约定来简化SSL证书的管理和标识。 支持不同类型的SSL证书。 多个主机名匹配可能与IP：端口到主机名表中的给定IP地址和端口相关联。 在这种情况下，首选匹配的主机名始终与命名约定一起使用，以标识相关的SSL证书。 命名约定以这样一种方式应用，它将首先查找与匹配最少的文件名匹配的最匹配的文件名。