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    METHOD FOR FORMING POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR
    1.
    发明申请
    METHOD FOR FORMING POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR 有权
    形成多晶硅薄膜晶体管的方法

    公开(公告)号：US20060051904A1

    公开(公告)日：2006-03-09

    申请号：US11085953

    申请日：2005-03-22

    申请人： Kyoung Son ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Lee ,  Se Kwon ,  Jang Im

    发明人： Kyoung Son ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Lee ,  Se Kwon ,  Jang Im

    IPC分类号： H01L21/84 ,  H01L21/20

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

    摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

    摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

    Method for forming polycrystalline silicon film
    2.
    发明申请
    Method for forming polycrystalline silicon film 有权
    形成多晶硅膜的方法

    公开(公告)号：US20050142897A1

    公开(公告)日：2005-06-30

    申请号：US10934153

    申请日：2004-09-03

    申请人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

    发明人： Eok Kim ,  Ho Lee ,  Myung Ryu ,  Jae Park ,  Kyoung Son ,  Jun Lee ,  Se Kwon

    IPC分类号： G02F1/13 ,  B23K26/00 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026

    摘要： Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

    摘要翻译： 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位，第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位，并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理，从而使非晶硅膜结晶成多晶硅膜。

    Method for forming polycrystalline silicon film
    4.
    发明申请
    Method for forming polycrystalline silicon film 审中-公开
    形成多晶硅膜的方法

    公开(公告)号：US20050142708A1

    公开(公告)日：2005-06-30

    申请号：US10930011

    申请日：2004-08-30

    申请人： Kyoung Seok Son ,  Ho Nyeon Lee ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Ho Lee ,  Se Kwon

    发明人： Kyoung Seok Son ,  Ho Nyeon Lee ,  Myung Ryu ,  Jae Park ,  Eok Kim ,  Jun Ho Lee ,  Se Kwon

    IPC分类号： H01L21/20 ,  G02F1/136 ,  H01L21/00 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

    CPC分类号： H01L21/02675 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765

    摘要： Disclosed herein is a method for forming a polycrystalline (poly-Si) film by the crystallization of an amorphous silicon film using laser light irradiation. The disclosed method comprises the steps of: sequentially depositing a buffer film and an amorphous silicon film on a glass substrate; depositing a metal film having laser light reflection function on the back side of the glass substrate; and irradiating the front side of the amorphous silicon film with laser light to crystallize the amorphous silicon film. In the laser light irradiation step, the irradiated laser light is absorbed into the amorphous silicon film, and a portion of the absorbed laser light is transmitted through the amorphous silicon film. The transmitted light is reflected from the metal film and absorbed into the amorphous silicon film again, thus crystallizing the amorphous silicon film twice over. According to the present invention, the amorphous silicon film is crystallized twice over so that a polycrystalline film having very large grains can be formed.

    摘要翻译： 本文公开了通过使用激光照射使非晶硅膜结晶来形成多晶（poly-Si）膜的方法。 所公开的方法包括以下步骤：在玻璃基板上依次沉积缓冲膜和非晶硅膜; 在玻璃基板的背面上沉积具有激光反射功能的金属膜; 并用激光照射非晶硅膜的正面以使非晶硅膜结晶。 在激光照射工序中，照射的激光被非晶硅膜吸收，一部分被吸收的激光透过非晶硅膜。 透射的光从金属膜反射并再次吸收到非晶硅膜中，从而使非晶硅膜结晶两次。 根据本发明，非晶硅膜结晶两次，从而可以形成具有非常大晶粒的多晶膜。

    System and method for performing auto scroll
    5.
    发明授权
    System and method for performing auto scroll 有权
    执行自动滚动的系统和方法

    公开(公告)号：US08910074B2

    公开(公告)日：2014-12-09

    申请号：US12905486

    申请日：2010-10-15

    申请人： Jung Woo Park ,  Woong Sub Kim ,  Kee Duk Park ,  Se Kwon

    发明人： Jung Woo Park ,  Woong Sub Kim ,  Kee Duk Park ,  Se Kwon

    IPC分类号： G06F3/048 ,  G06F3/0485 ,  G06F3/0484

    CPC分类号： G06F3/0485 ,  G06F3/0484 ,  G06F3/04855

    摘要： Provided is a system and method for performing an auto scroll. The system for performing the auto scroll may include an auto scroll determination unit to determine whether to perform the auto scroll on a page, an auto scroll performing unit to perform the auto scroll on the page so that a main text of the page may be obtained with focus, and a page providing unit to output the auto scrolled page. According to exemplary embodiments of the present invention, even though a user does not manually scroll to data of the page to be viewed, the data of the page may automatically be scrolled so that the data may be obtained with focus.

    摘要翻译： 提供了一种用于执行自动滚动的系统和方法。 用于执行自动滚动的系统可以包括自动滚动确定单元，用于确定是否执行页面上的自动滚动，自动滚动执行单元以在页面上执行自动滚动，使得可以获得页面的主文本 具有焦点和页面提供单元输出自动滚动页面。 根据本发明的示例性实施例，即使用户不手动滚动到要查看的页面的数据，也可以自动地滚动页面的数据，从而可以以焦点获得数据。

    Static electricity preventing assembly for display device and method of manufacturing the same
    10.
    发明申请
    Static electricity preventing assembly for display device and method of manufacturing the same 有权
    用于显示装置的静电防止组件及其制造方法

    公开(公告)号：US20070131932A1

    公开(公告)日：2007-06-14

    申请号：US11635501

    申请日：2006-12-08

    申请人： Hyun Shin ,  Yeon Mo ,  Jae Jeong ,  Se Kwon

    发明人： Hyun Shin ,  Yeon Mo ,  Jae Jeong ,  Se Kwon

    IPC分类号： H01L31/00

    CPC分类号： H01L27/0248 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/3244 ,  H01L27/3276

    摘要： A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

    摘要翻译： 一种用于电子设备的静电防止组件可以包括衬底，衬底上的缓冲层，缓冲层包括暴露衬底各自区域的多个接触孔，缓冲层上的短路棒， 缓冲层，缓冲层上的金属布线，其中每个金属布线的第一部分可以通过接触孔电连接到基板，每个金属布线的第二部分可以连接到相应的 焊盘电极中的一个，并且每个金属布线的第三部分可以连接到短路棒，其中第一部分可以在第二部分和第三部分之间。