公开(公告)号：USD721663S1

公开(公告)日：2015-01-27

申请号：US29462404

申请日：2013-08-02

申请人： Epistar Corporation

设计人： Chao Hsing Chen ,  Tsun Kai Ko ,  Chien Fu Shen ,  Jia Kuen Wang ,  Hung Che Chen ,  Chun Teng Ko ,  Chien Chih Liao

公开(公告)号：US09490295B2

公开(公告)日：2016-11-08

申请号：US14716262

申请日：2015-05-19

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optoelectronic device including a substrate having a first site, a second side opposite to the first side, and an outer boundary; a light emitting unit formed on the first side; a first electrode electrically connected to the light emitting unit; a second electrode electrically connected to the light emitting unit; and a heat dissipation pad formed between the first electrode and the second electrode and electrically insulated from the light emitting unit.

摘要翻译： 一种光电子器件，包括具有第一部位的衬底，与第一侧相对的第二侧和外部边界; 形成在第一侧上的发光单元; 电连接到所述发光单元的第一电极; 电连接到所述发光单元的第二电极; 以及形成在所述第一电极和所述第二电极之间并与所述发光单元电绝缘的散热垫。

公开(公告)号：USD740240S1

公开(公告)日：2015-10-06

申请号：US29514131

申请日：2015-01-08

申请人： EPISTAR CORPORATION

设计人： Chao Hsing Chen ,  Tsun Kai Ko ,  Chien Fu Shen ,  Jia Kuen Wang ,  Hung Che Chen ,  Chun Teng Ko ,  Chien Chih Liao

公开(公告)号：US11355550B2

公开(公告)日：2022-06-07

申请号：US17064769

申请日：2020-10-07

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

摘要： An optoelectronic device comprises a substrate; a first and a second optoelectronic units formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.

公开(公告)号：US09741763B2

公开(公告)日：2017-08-22

申请号：US15330883

申请日：2016-11-07

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L25/075

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optoelectronic device includes a substrate having a first side, a second side opposite to the first side; a first optoelectronic unit formed on the first side of the substrate; a second optoelectronic unit formed on the first side of the substrate; a third optoelectronic unit formed on the first side of the substrate; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.

公开(公告)号：US11705480B2

公开(公告)日：2023-07-18

申请号：US17733262

申请日：2022-04-29

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/644 ,  H01L33/64 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

摘要： An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

公开(公告)号：US10522588B2

公开(公告)日：2019-12-31

申请号：US16031737

申请日：2018-07-10

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

摘要： An optoelectronic device comprises a substrate; a first optoelectronic unit formed on the substrate; a second optoelectronic unit formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.

公开(公告)号：USD718259S1

公开(公告)日：2014-11-25

申请号：US29464136

申请日：2013-08-13

申请人： Epistar Corporation

设计人： Chao Hsing Chen ,  Tsun Kai Ko ,  Chien Fu Shen ,  Jia Kuen Wang ,  Hung Che Chen ,  Chun Teng Ko ,  Chien Chih Liao

公开(公告)号：US10825860B2

公开(公告)日：2020-11-03

申请号：US16692790

申请日：2019-11-22

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

摘要： An optoelectronic device comprises a substrate; a first optoelectronic unit formed on the substrate; a second optoelectronic unit formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.

公开(公告)号：US10056429B2

公开(公告)日：2018-08-21

申请号：US15670620

申请日：2017-08-07

申请人： EPISTAR CORPORATION

发明人： Chao Hsing Chen ,  Jia Kuen Wang ,  Chien Fu Shen ,  Chun Teng Ko

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L33/48 ,  H01L33/60 ,  H01L33/64 ,  H01L25/075

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic unit and the second optoelectronic unit; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad electrically insulated from the third optoelectronic unit wherein the first pad is formed on the third optoelectronic unit or disposed between the first electrode and the second electrode; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.