-
公开(公告)号：US06584035B2
公开(公告)日：2003-06-24
申请号：US10032375
申请日：2001-12-21
IPC分类号： G11C800
CPC分类号： G11C16/08 , G11C7/1048 , G11C8/10 , G11C2207/002
摘要： Column select circuits having improved immunity to supply potential noise during sensing of the programmed state of a target memory cell are suited for use in low-voltage memory devices. Such column select circuits contain driver circuits having a filtered path and an unfiltered path for applying a supply potential to a gate of a pass transistor. The unfiltered path is utilized during a first sensing phase, such as during decoding or precharging of the bit lines, when transition speed of the pass transistors is desired. The filtered path is utilized at least during a second sensing phase while the sensing device is detecting the programmed state of the target memory cell. By reducing the noise of the supply potential using the filtered path, margins are improved on the sensing device and the sensing device is thus capable of operating at lower supply potentials.
-
2.发明申请WORD LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME 有权用于非易失性存储器件和存储器件的WORD线电压升压系统和方法以及使用其的基于处理器的系统公开(公告)号：US20110170359A1
公开(公告)日：2011-07-14
申请号：US13070121
申请日：2011-03-23
IPC分类号： G11C16/10
摘要： The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
摘要翻译： 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选择的字线 的阵列驱动晶体管。
-
搜索结果
2 条记录 (耗时 0.021 秒)
