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    Image sensors having multiple photoelectric conversion devices therein
    1.
    发明授权
    Image sensors having multiple photoelectric conversion devices therein 有权
    具有多个光电转换装置的图像传感器

    公开(公告)号：US08625016B2

    公开(公告)日：2014-01-07

    申请号：US12958799

    申请日：2010-12-02

    申请人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    发明人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC分类号： H04N5/335 ,  H01L31/062 ,  H01L21/02 ,  H01L21/00

    CPC分类号： H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    摘要： Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    摘要翻译： 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    Image Sensors Having Multiple Photoelectric Conversion Devices Therein
    2.
    发明申请
    Image Sensors Having Multiple Photoelectric Conversion Devices Therein 有权
    具有多个光电转换器件的图像传感器

    公开(公告)号：US20110128430A1

    公开(公告)日：2011-06-02

    申请号：US12958799

    申请日：2010-12-02

    申请人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    发明人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC分类号： H04N5/335 ,  H01L31/113 ,  H01L31/0232 ,  H01L31/00

    CPC分类号： H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    摘要： Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    摘要翻译： 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权
    图像传感器

    公开(公告)号：US20110108897A1

    公开(公告)日：2011-05-12

    申请号：US12940499

    申请日：2010-11-05

    申请人： Junemo Koo ,  Ihara Hisanori ,  Yoondong Park ,  HoonSang Oh ,  Sangjun Choi ,  HyungJin Bae ,  Tae Eung Yoon ,  Sungkwon Hong

    发明人： Junemo Koo ,  Ihara Hisanori ,  Yoondong Park ,  HoonSang Oh ,  Sangjun Choi ,  HyungJin Bae ,  Tae Eung Yoon ,  Sungkwon Hong

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14647

    摘要： An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.

    摘要翻译： 图像传感器包括由半导体衬底上的器件隔离区限定的彼此分离的光电转换区和浮动扩散区的有源区，以及包括设置在上部的第一子栅极的转移晶体管 半导体衬底的表面和在所述光电转换区域和所述浮动扩散区域之间的有源区域上在所述半导体衬底的凹陷部分内延伸的第二子栅极，其中所述光电转换区域包括多个光电转换元件， 在半导体衬底内彼此重叠并且与凹部间隔开。

    Image sensor
    4.
    发明授权
    Image sensor 有权
    图像传感器

    公开(公告)号：US08637910B2

    公开(公告)日：2014-01-28

    申请号：US12940499

    申请日：2010-11-05

    申请人： Junemo Koo ,  Ihara Hisanori ,  Yoondong Park ,  HoonSang Oh ,  Sangjun Choi ,  HyungJin Bae ,  Tae Eung Yoon ,  Sungkwon Hong

    发明人： Junemo Koo ,  Ihara Hisanori ,  Yoondong Park ,  HoonSang Oh ,  Sangjun Choi ,  HyungJin Bae ,  Tae Eung Yoon ,  Sungkwon Hong

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14647

    摘要： An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.

    摘要翻译： 图像传感器包括由半导体衬底上的器件隔离区限定的彼此分离的光电转换区和浮动扩散区的有源区，以及包括设置在上部的第一子栅极的转移晶体管 半导体衬底的表面和在所述光电转换区域和所述浮动扩散区域之间的有源区域上在所述半导体衬底的凹陷部分内延伸的第二子栅极，其中所述光电转换区域包括多个光电转换元件， 在半导体衬底内彼此重叠并且与凹部间隔开。