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    Image sensors having multiple photoelectric conversion devices therein
    1.
    发明授权
    Image sensors having multiple photoelectric conversion devices therein 有权
    具有多个光电转换装置的图像传感器

    公开(公告)号：US08625016B2

    公开(公告)日：2014-01-07

    申请号：US12958799

    申请日：2010-12-02

    申请人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    发明人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC分类号： H04N5/335 ,  H01L31/062 ,  H01L21/02 ,  H01L21/00

    CPC分类号： H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    摘要： Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    摘要翻译： 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    Image Sensors Having Multiple Photoelectric Conversion Devices Therein
    2.
    发明申请
    Image Sensors Having Multiple Photoelectric Conversion Devices Therein 有权
    具有多个光电转换器件的图像传感器

    公开(公告)号：US20110128430A1

    公开(公告)日：2011-06-02

    申请号：US12958799

    申请日：2010-12-02

    申请人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    发明人： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC分类号： H04N5/335 ,  H01L31/113 ,  H01L31/0232 ,  H01L31/00

    CPC分类号： H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    摘要： Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    摘要翻译： 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    Center of mass detection via an active pixel sensor
    10.
    发明授权
    Center of mass detection via an active pixel sensor 有权

    公开(公告)号：US07053929B2

    公开(公告)日：2006-05-30

    申请号：US10289501

    申请日：2002-11-05

    申请人： Orly Yadid-Pecht ,  Brad Minch ,  Bedabrara Pain ,  Eric Fossum

    发明人： Orly Yadid-Pecht ,  Brad Minch ,  Bedabrara Pain ,  Eric Fossum

    IPC分类号： H04N5/225

    CPC分类号： H04N5/232 ,  H04N5/2351 ,  H04N5/374 ,  H04N5/378

    摘要： An imaging system for identifying the location of the center of mass (“COM”) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.